【会议论文】基于耗尽型和增强型Ga₂O₃薄膜晶体管的单片集成的Ga₂O₃ NMOS逆变集成电路

        论文简介：来自阿卜杜拉国王科技大学高级半导体实验室的Vishal Khandelwal、Saravanan Yuvaraja、Glen Isaac Maciel García、Shibin Krishna和Xiaohang Li联合发表了一篇名为《Ga₂O₃ NMOS inverter integrated circuit based on monolithic integration of depletion and enhancement mode Ga₂O₃ thin film transistor》的论文文章。该文章基于耗尽型和增强型Ga₂O₃薄膜晶体管的单片集成的Ga₂O₃ NMOS逆变集成电路。