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Asian Gallium Oxide Alliance Charter
Chapter 1 General Rules
Article 1 The name of this alliance is Asian Gallium Oxide Alliance (hereinafter referred to as the Alliance).
Article 2 The Alliance is located in Tianjin, People's Republic of China (PRC).
Article 3 The Alliance aims at promoting the development of the gallium oxide business in Asia by developing its gallium oxide technology and improving gallium oxide researchers' overall technical capability.
Article 4 The Alliance consists of the alliance council, the technical committee, the secretariat and all members who support the objectives of the alliance.
Article 5 To carry out its work effectively, the Alliance sets the following objectives:
(1) To promote gallium oxide industrialization by integrating the resources in the gallium oxide industry.
(2) To establish a professional exchange and sharing platform for information resources in the gallium oxide industry.
(3) To organize online and offline exchange activities and conferences in the gallium oxide industry.
(4) To establish a proper talent exchange and training mechanism.
(5) To lay down an industrial standard for the gallium oxide industry.
(6) To carry out other activities to achieve the purpose of the alliance.
Chapter 2 Membership
Article 6 The Alliance has the following types of membership:
(1) Chairman members (2) Council members
(3) Corporate members (4) Research institution and university members
Article 7 The chairman members are Tianjin Wonder-Sino International Trade Co., Ltd. and Novel Crystal Technology, who act as joint president, with the term of office being three years.
Article 8 Council members may make suggestions on the operation of the Alliance and the organization of academic conferences.
Article 9 Corporate members are private enterprises and university affiliated companies.
Article 10 Research institution and university members are state-run research institutions and universities.
Article 11 Members shall have priority in the matters of the Alliance.
Article 12 An application must be submitted to the secretariat to apply to be a member of the Alliance.
Article 13 A member may quit the Alliance by submitting a withdrawal application to the secretariat.
Article 14 The withdrawal is applicable to the members who fail to pay their membership dues within the prescribed time limit and the director members who fail to attend the council meeting for two consecutive times for no reason.
Article 15 Removal of membership is applicable to the members who cause damage to the reputation of the Alliance.
Chapter 3 Positions and Duties
Article 16 The Alliance sets the the following positions:
(1) Chairman: 1 from China and 1 from other countries
(2) Vice chairman: no more than 3
(3) Director (except chairman and vice chairman): no more than 20
(4) Supervisor: 2
Article 17 Composition, Duties and Rules of Procedure of the Council
(1) Composition of the Council
The council members are elected from the members on the basis of openness, fairness and impartiality. The council is composed of the representatives designated by the co-chairman unit, the vice-chairman unit and the council members. Two joint presidents and several vice chairmen and directors shall be appointed, with the term of office being three years.
(2) Duties of the Council
2.1 To maintain the stability of the Alliance, and to formulate and modify the alliance charter;
2.2 To approve and revoke the membership of the Alliance;
2.3 To elect, appoint and remove from office the joint president, vice chairman and secretary general of the secretariat of the Alliance;
2.4 To review or approve the work reports of the Technical Committee and the Secretariat;
2.5 To decide the objectives and key tasks of technological development of the Alliance according to the suggestions of the Technical Committee, and to handle such major issues as fund raising, fund use, achievement transformation and income distribution;
2.6 To formulate, review, approve and modify the internal regulations of the Alliance;
2.7 To decide on the change and termination of the alliance organizations;
2.8 To decide on the establishment and removal of the Secretariat;
2.9 To review the financial report of the Alliance;
2.10 To decide on and modify the rate for membership;
2.11 To discuss and decide on other major issues.
(3) Rules of procedure of the Council
The council makes decisions through meetings. The council meeting is held regularly every year, and an interim meeting can be convened upon the proposal of a quarter of the directors. The council meeting shall be convened and presided over by the chairman or the vice-chairman entrusted by the chairman, and the voting system of one person one vote shall be implemented. The meeting shall be effective only when attended by more than 2/3 representatives of the council members. A resolution formed at the council meeting shall be valid only with the consent of more than 2/3 of the members present at the council meeting.
Chapter 4 Technical Committee
Article 18 Establishment of Technical Committee
(1) The Technical Committee is established to ensure that the Alliance works well and makes correct technical judgment. The term of office of the committee member is three years.
(2) The members of the Technical Committee shall be elected by the council.
Article 19 Functions
(1) To judge and evaluate the internal technology of the Alliance.
(2) To provide technical guidance and discussion for new projects.
(3) To select and finalize conference papers and speeches as consultants.
(4) To collect papers and news materials in the industry.
Chapter 5 Secretariat
Article 20 Establishment of the Secretariat
(1) The secretariat is established to ensure that the Alliance works well.
(2) The secretariat is staffed with full-time officials.
(3) The provisions on the secretariat and its officials shall be decided by the chairman after the resolution of the council meeting.
(4) The officials are under the direction of the council and are appointed and removed by the council.
Article 21 The implementation of the affairs of the Alliance shall be decided by the chairman except for the rules stipulated by the Alliance.
Article 22 Functions
(1) To take charge of the comprehensive management of the Alliance.
(2) To implement the resolutions of the council.
(3) To coordinate the relationship between members.
(4) To inform members of the details of the meetings and societies of the Alliance and other related affairs.
(5) To take charge of asset management and accounting control.
Chapter 6 Assets and Accounting
Article 23 The business year of the Alliance is from January 1st to December 31st of each year.
Article 24 The assets of the Alliance include the following:
(1) The property donated at the time of establishment
(2) Membership fee
(3) Sponsorship
(4) Sponsorship of the host society
(5) Other incomes
Article 25 Assets and Accounting
(1) The assets of the Alliance shall be managed by the secretariat, and the administrative rules shall be decided by the council.
(2) Relevant accounting regulations shall be decided by the chairman after the resolution of the council meeting.
Article 26 The secretariat shall prepare the following written report after the end of the business year.
(1) The annual work report
(2) The financial statements
Chapter 7 Termination
Article 27 When the Alliance dissolves after it completes its purpose or dissolves on its own or dissolves for the reason of separation or merger, the secretariat shall propose a termination motion. The motion to terminate the Alliance must be passed by council unanimously.
Article 28 Before the termination of the Alliance, it is necessary to set up a special liquidation group under the guidance of relevant state and local authorities and institutions, which shall clean up the creditor’s rights and debts and deal with problems arising from the termination. No activities other than liquidation shall be carried out during the period of liquidation.
Download:Asian Gallium Oxide Alliance Charter


Download:Application Form for Membership of AGOA
Membership Fee Standards and Management Rules of AGOA
Emall:contact@agoa.top
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Office of the Secretariat
Person to contact: Ms. Zhang
Fixed telephone:86-22-28219577
Mobil phone:86-18526813799
E-mail: contact@agoa.top
- Member Dynamic
- News
- Member List
- Member Intro
- Specialist Intro
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· Technical Expert Committee List(Updated in May. 2026)
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· Member List(Updated in Sep. 2026)
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【Member Intro】 Beijing Huaxia Furun Industry and Trade Co., Ltd.—— Regular Member
· 【Member Intro】 Hangzhou Time-Tech Spectra Co., Ltd.—— Regular Member
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· 【Member Intro】Shandong SINOGa Valley Semiconductor Co.,Ltd—— Regular Member
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· 【Member Intro】Bridging Industry and Academia: The Nano-Fabrication Platform at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, as a Most Practical R&D Partner for Customers
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· 【Member Intro】NextGO Epi —— Regular Member
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· 【Member Intro】Beijing Orient Semi —— Regular Member
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· 【Member Intro】FreeSpirit Instruments —— Regular Member
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【Specialist Intro】World’s First 12-Inch Crystal and National Standard Leading Developer! Ga₂O₃ Industrialization Leader Hongji Qi Drives Breakthroughs with His Team After Six Years in Fuyang
· 【Specialist Intro】Aleksei V. Almaev —— the Member of Technical Expert Committee
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· 【Specialist Intro】Hu Jichao —— the Member of Technical Expert Committee
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· 【Specialist Intro】Xu Xiaodong —— the Member of Technical Expert Committee
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· 【Specialist Intro】Andriy Revenko —— the Member of Technical Expert Committee
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· 【Specialist Intro】Yang Weifeng —— the Member of Technical Expert Committee
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· 【Specialist Intro】Zhang Xiaodong —— the Member of Technical Expert Committee
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- Industry Information
- News Trends
- Expert Interview
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· 【Domestic News】Fuzhou University’s Ga₂O₃ Team Earns Further National Recognition, with Major Progress in Commercialization
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· 【Domestic News】Hangzhou Company Begins SiC–Ga₂O₃ Hybrid Module Validation, Advancing from Third-to Fourth-Generation Semiconductors
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· 【Domestic News】Shanghai And Fujian Deployments Herald New Policy For Gallium Oxide And Other Fourth-Generation Semiconductors
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· 【Domestic News】2026 Sinan Cup Fourth-Generation Semiconductor Innovation and Entrepreneurship Competition Finals Opens in Lingang, Driving Future Industry Development
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· 【World Express】FOX develops 3.5-inch gallium oxide crystal without iridium
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【Expert Interview】Beyond 8 MV/cm: Ga₂O₃ Must Prove Its Value, Not Just Its Performance — Industry Reflections from NextGO Epi’s Dr. Tashun Chou
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· 【Expert Interview】“Don't Run, But Walk Fast.”:HKUST's Prof. Man Hoi Wong on Industrializing Gallium Oxide
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· 【Expert Interview】Awaiting Dawn Before Daybreak: An Interview with Japan NCT President Kuramata Akito on Gallium Oxide Industrialization
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· 【Expert Interview】After the 12-Inch Single-Crystal Breakthrough, How Far Is Gallium Oxide from Industrialization? Xinhua Interviews Qi Hongji, Chairman of Fujia Gallium Industry
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· 【Expert Interview】Zhao Jinyao, Co-founder of Beijing Orient Semi, Decodes the Era of Domestic Parallel Development for Gallium Oxide: Opportunities and Implementation Challenges of 4th-Generation Semiconductors
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· 【Expert Interview】Hardcore Technology + Strategic Layout: Chairman Qi Hongji Explains How Fujia Gallium Leads the Gallium Oxide Sector
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【Member Papers】APL | Zheng Shi’s Team at Nanjing University of Posts and Telecommunications: Self-Powered Reconfigurable UV Logic Enabled by Photocurrent Polarity Reversal in a Ga₂O₃/GaN Heterojunction, with Six Logic Functions Realized in a Single Device
· 【Member Papers】Atomic-Scale Strain Relaxation via Ar-Bombarded Surface Modification for Enabling Single-Crystalline β-Ga₂O₃ (010) Heteroepitaxy
09-22
· 【International Papers】Impact of Si ion implantation on α-Ga₂O₃ and β-Ga₂O₃ lateral MESFET transistors
09-22
· 【Domestic Papers】Tuning photo-induced hole transport dynamics in Ga₂O₃ photoelectrodes for ultra-stable underwater solar-blind UV detection and communication
09-21
· 【Member Papers】MOCVD growth of (AlₓGa₁₋ₓ)₂O₃(x=0‑0.77)alloyed films for deep UV photodetection applications
09-21
· 【Epitaxy Papers】Gallium clusters in non-stoichiometric gallium oxide films: a hidden electrical conduction pathway
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· 【Epitaxy Papers】Compositional Design of Non-Stoichiometric Gallium Oxide Thin Films
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【Knowledge Discover】Epitaxy Without Vacuum? Exploring Mist-CVD for Low-Cost Ga₂O₃ Epitaxy
· 【Knowledge Discover】VB-Method Gallium Oxide Single-Crystal Growth (I) | Principles and Compatibility Analysis
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· 【Knowledge Discover】Epitaxial Commercialization: Technical Breakthroughs and Practical Challenges of HVPE and MOCVD
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· 【Knowledge Discover】Epitaxial Growth — A Critical Step from Substrates to Devices
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· 【Knowledge Discover】What is a Wafer? Why Does Chip Manufacturing Begin with a Round Substrate?
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· 【Knowledge Discover】What Does Doping Really Change?
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· 【Knowledge Discover】The Passivation Layer in Power Devices | One Dielectric Layer, Four Roles
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- Patents&Standards
- Patents
- Standards News
- Standards List
【Patenes】Gallium Oxide Patent Weekly Report (Issue 11, September)
· 【Patenes】Gallium Oxide Patent Weekly Report (Issue 10, September)
09-11
· 【Patenes】Gallium Oxide Patent Weekly Report (Issue 9, August)
09-07
· 【Patenes】Gallium Oxide Patent Weekly Report (Issue 8, August)
08-28
· 【Patenes】Gallium Oxide Patent Weekly Report (Issue 7, August)
08-21
· 【Patents】Gallium Oxide Patent Weekly Report (Issue 6, August)
08-14
· 【Patenes】Gallium Oxide Patent Weekly Report (Issue 5, July)
08-07
【Standard News】CR Micro Leads Release of Gallium Oxide Testing Standard, Advancing Ultra-Wide-Bandgap Semiconductor Standardization
· 【Standard News】Coordinated Acceleration of Gallium Oxide Standards: Multiple Alliance Members Participate in the 2026 H1 China Semiconductor Materials Industry Group Standards Working Conference
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· 【Standard News】Led 1 Standard, Participated in 2 | Garen Semiconductor Further Advances Gallium Oxide Group Standard Development
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· 【Standards Focus】When Do GB/T Recommended Standards Become Mandatory Requirements?
05-27
· 【Standards Focus】How Many Types of Standards Are There? A Clear Guide to 13 Common Categories of Standards
05-11
· 【Standard News】National Semiconductor Material Standards Meeting Successfully Held; Gallium Oxide National Standard Roadmap Continues to Advance
05-11
· 【Standards Focus】The Standardization Administration of China Issues a Circular Regulating the Attribution of Drafting Organizations and Drafters for Recommended National Standards
12-24
- Alliance Conference
- Conference News
- Conference Review
- Registration
【Conference Information】2026 The WESEMiBAY Semiconductor Ecosystem Expo(2026.10.14-10.16)
· 【Conference Information】The 2nd Development Forum on Micro-Nano Materials and Semiconductor Devices(2026.9.18-9.20)
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· 【Conference Information】The 14th Semiconductor Equipment, Materials and Core Parts Exhibition(CSEAC 2026)(2026.8.31-9.2)
08-26
· 【Conference News】The Global Race for Ga₂O₃: IWGO 2026 Frontline Insights — How Far Has Industrialization Come?
08-24
· 【Conference Information】2026 Power Semiconductor Industry Summit(2026.8.19-8.21)
08-12
· 【Conference News】AGOA at IWGO-6: Connecting Global Gallium Oxide Innovators to Explore Technology Advances and Industry Growth
08-06
· 【Conference Information】The 12th Asia-Pacific Workshop on Widegap Semiconductors(2026.10.11-10.15)
08-03
-
AGOA at IWGO-6: Capturing Global Gallium Oxide Exchange Moments(2026.8.2-8.7)
-
Synergy and Collaboration for a Shared Ecosystem | AGOA Deeply Engages in FINE2026 Future Industry New Materials Expo(2026.6.10-12)
-
JFS Forum Concludes Successfully: Witnessing the New Compound Semiconductor Track Empowered by Gallium Oxide(2026.4.23-25)
-
At the 2026 Semiconductor New Materials Development (Deyang) Conference: Tracking the Development Trends of Gallium Oxide(2026.4.15-17)
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2025 APCSCRM Council Member Unit Interviews
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2025 APCSCRM Member Unit Interviews
-
Witnessing the Present and Future of Gallium Oxide — APCSCRM 2025
The first Seminar on Gallium Oxide Technology and Industry in 2024
Wide bandgap semiconductors have become one of the strategic commanding elevations of international scientific and technological competition. Gallium Oxide, as a new ultra-wide bandgap semiconductor material, has shown excellent performance far beyond the theoretical limit of traditional semiconductor materials in the fields of power devices, radio frequency devices and photodetectors, and has played a key role in promoting the development of related devices to higher efficiency, smaller volume and higher temperature resistance, which has attracted extensive attention from academia and industry. With the rapid development of new energy vehicles, 5G/6G communication, smart grid and other emerging technology fields, the market demand for Gallium Oxide materials and devices is growing, and its industrialization process will also accelerate.
To promote the academic and technical exchange and cooperation and industrial development of Gallium Oxide nationwide, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou Institute of Optics and Fine Mechanics, Xidian University, Hangzhou Fujia Gallium Technology Co., Ltd., Hangzhou Garen Semiconductor Co., Ltd., Semiconductor Online and Asian Gallium Oxide Alliance will jointly organize the First Gallium Oxide Technology and Industry Seminar in 2024 on July 17-18, 2024 in Hangzhou, Zhejiang Province. We sincerely invite professionals from universities, scientific research institutions, enterprises and government departments to participate in this seminar, actively carry out extensive exchanges and discussions, and jointly promote the technological breakthrough and industrialization process of Gallium Oxide materials and related devices.
01 Sponsors and Undertakers
Sponsors
ZJU-Hangzhou Global Scientific and Technological Innovation Center
(State Key Laboratory of Silicon and Advanced Semiconductor Materials)
Hangzhou Institute of Optics and Fine Mechanics
(Zhejiang Engineering Research Center for Advanced Optoelectronic Functional Materials)
Xidian University
(National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology)
Undertakers
Hangzhou Fujia Gallium Technology Co., Ltd
Hangzhou Garen Semiconductor Co., Ltd
Semiconductor Online
Asian Gallium Oxide Alliance
02 Organizational Structure
Honorary Chairman of the Seminar
Hao Yue, Academician of Chinese Academy of Sciences, Xidian University
Yang Deren, Academician of Chinese Academy of Sciences, Zhejiang University
Jiang Fengyi, Academician of Chinese Academy of Sciences, Nanchang University
Zhang Rong, Academician of Chinese Academy of Sciences, Xiamen University
Chairman of the Seminar
Zhang Long, President, Hangzhou Institute of Optics and Fine Mechanics
Zhang Jincheng, Professor, Xidian University
Chairman of the Organizing Committee
Qi Hongji, Director, Hangzhou Institute of Optics and Fine Mechanics
Hui Zhang, Professor, Zhejiang University
Feng Qian, Professor, Xidian University
03 Conference Topics
Growth and processing of Gallium Oxide crystals
Gallium Oxide film and its epitaxy technology
Gallium Oxide power and optoelectronic devices
Gallium Oxide related equipment
Gallium Oxide industry and policy
04 Time and address
Time: July 17-18 (sign in on 16th)
Address: Blossom Water Museum Hotel Hangzhou (118 Shuibo Road, Xiaoshan District, Hangzhou)
For participation, exhibition, publicity and sponsorship, please contact the Secretariat of the Asian Gallium Oxide Alliance
Contact: Ms. Zhang
E-mail: contact@agoa.top
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