【Specialist Intro】Andriy Revenko —— the Member of Technical Expert Committee

Personal Profile

      Andriy Revenko is a semiconductor physicist and computational‑modelling specialist with more than twenty years of experience in academic research and university teaching. His work spans wide‑bandgap and ultra‑wide‑bandgap materials, including Ga₂O₃, GaN, GaNAs, ZnO, and SiC, with a focus on thin‑film growth, structural, optical and electronic-properties characterization, diffusion processes, and residual‑stress analysis. He has developed the mathematical models for nitrogen diffusion and phase formation in GaN and GaNAs heterostructures, as well as multiphysics simulations of mechanical stress in Ga₂O₃, ZnO, and SiC films on silicon‑based substrates. His recent research includes uncertainty‑quantification‑based modelling of nanoscale electrochemical sensors, integrating electrostatics, ion transport, and fluid dynamics to analyze sensitivity and signal stability. Dr. Revenko has held research positions at leading universities in Ukraine, Russia, and Ireland, and has extensive expertise with COMSOL Multiphysics, MATLAB, Maple, and FlexPDE.

Research AchievementsResearch on β‑Ga₂O₃ Thin Films and Heterostructures

      Dr. Revenko has carried out comprehensive experimental and computational studies of β‑Ga₂O₃ thin films grown on silicon and porous‑silicon–based substrates using RF magnetron sputtering. His work combines Raman spectroscopy, X‑ray diffraction, SEM analysis, and finite‑element modelling to evaluate crystalline quality, strain formation, and mechanical stress in Ga₂O₃ heterostructures. He demonstrated that high‑quality β‑Ga₂O₃ films can be deposited on both Si and SiC/por‑Si/Si substrates, achieving low structural distortion and stable film morphology. A significant part of this research involved detailed COMSOL Multiphysics simulations of residual mechanical stress, which showed strong agreement with experimentally measured values and helped clarify the influence of substrate structure, buffer layers, and deposition parameters on stress formation. These results highlight the potential of RF magnetron sputtering as a cost‑effective method for integrating β‑Ga₂O₃ with silicon‑based platforms for power and optoelectronic applications.

      1.Revenko; V. Kidalov; D. Duleba; M. Derhachov; R. Redko; Robert Johnson; M.-A. Aßmann; O. Gudymenko; O. Sushko; M. Koptiev, --- Experimental Analysis and Computational Modeling of Residual Stress in β-Ga2O3 Thin Films Grown on Si by RF Magnetron Sputtering // Acta Physica Polonica A, 2025, No. 2, V.148, pp. 158-165, https://doi.org/10.12693/aphyspola.148.158

      2.Andriy S. Revenko; Valerii V. Kidalov; Mykhailo P. Derhachov; Roman A. Redko; Robert P. Johnson; Marc A. Assmann; Olexandr I. Gudymenko; Oleksii O. Sushko; Mykhailo M. Koptiev, --- Investigation of mechanical stresses in β-Ga2O3 films obtained by radio frequency magnetron sputtering on porous-Si/Si substrate // The European Physical Journal Applied Physics, 2025, Volume 100, (21), https://doi.org/10.1051/epjap/2025021

      3.Valeriy Kidalov; Mykhailo Derhachov; Andriy Revenko; Oleksandr Gudymenko; Roman Redko; Oleksii Olehovych Sushko; Mykhailo Koptiev; Marc Assmann; Robert Johnson, --- Structural Properties and Raman Spectra of Micron-Thick β-Ga2O3 Films Deposited on SiC/Porous Si/Si Substrates //ECS Journal of Solid State Science and Technology, 2025-08-14, https://doi.org/10.1149/2162-8777/adfb52

 

Research on ZnO and SiC Thin Films on Porous Silicon Templates

      Dr. Revenko has also contributed to the development of ZnO and SiC thin films grown on porous‑silicon–based substrates, focusing on structural optimization, stress reduction, and the role of porous templates in improving film quality. In the case of ZnO, he demonstrated that the use of SiC buffer layers enables the growth of structurally uniform ZnO films with significantly reduced residual stress, confirmed through SEM and XRD analysis. His studies of SiC/por‑Si heterostructures revealed substantial transformations in the porous‑silicon morphology during SiC formation and provided detailed insight into the mechanical and optical properties of the resulting films. Alongside experimental characterization, he performed finite‑element modelling of residual stress in SiC layers on porous silicon, showing how substrate morphology and defect structure influence stress distribution. This body of work establishes porous‑silicon–based templates as an effective platform for producing high‑quality ZnO and SiC films for wide‑bandgap semiconductor applications.

      1.S. Revenko,V.V. Kidalov, O.I. Gudymenko, --- Structural properties of ZnOfilms obtained on SiC/porous-Si by the method of high frequence magnetron sputtering // Physics And Chemistry Of Solid State, 2025, V.26, No 3,pp. 669-704, https://doi.org/10.15330/pcss.26.3.699-704

      2.Valerii Kidalov, Lukas Hertling, Roman Redko, V. Dzhagan, Sergii Mamykin, Andrey Revenko, Marc Aßmann, Alena Dyadenchuk, Vitalii Kidalov and D. R. T. Zahn, - Optical properties of silicon carbide thin films deposited by atomic substitution on porous silicon // Materials Research Express, 2025, accepted manuscript, http://dx.doi.org/10.1088/2053-1591/adf029

      3.V. Kidalov, A. S. Revenko, D. Duleba, R. A. Redko, M. Assmann, A. I. Gudimenko, R. P. Johnson, – Investigation of Mechanical Stresses in SiC/Porous-Si Heterostructure //ECS Journal of Solid State Science and Technology, 2024, 13 114003, https://doi.org/10.1149/2162-8777/ad89f8

 

Research on Nanoscale Sensing Devices and Uncertainty‑Quantification‑Based Modelling

      Dr. Revenko has contributed to the theoretical and computational analysis of nanoscale electrochemical sensing devices, focusing on how physical and geometric parameters influence sensor response. His work combines electrostatic modelling, ion‑transport simulation, and laminar‑flow analysis within a multiphysics framework, together with uncertainty‑quantification methods, to investigate how nanoscale geometry and diffusion processes determine the sensitivity and stability of next‑generation sensors. This approach made it possible to identify the dominant factors affecting signal variability and to demonstrate how uncertainty‑aware modelling can guide the design of more robust and reproducible nanosensors. The results provide a systematic framework for optimizing sensor architectures and improving performance in practical electrochemical applications.

      1.Duleba Dominik, Martínez-Aviñó Adria, Revenko Andriy, Johnson Robert P, –  Understanding Sensitivity in Nanoscale Sensing Devices //ACS Measurement Science Au, 2025, Volume 5, Issue 3, Pages 353 – 366, https://doi.org/10.1021/acsmeasuresciau.5c00023

 

Research on GaN and GaNAs Films Formed by Nitridation of GaAs and Porous GaAs Substrates

      Dr. Revenko has carried out extensive theoretical and experimental studies of GaN and GaNAs thin films obtained through nitridation of GaAs and porous‑GaAs substrates. His work includes the development of a mathematical model describing nitrogen diffusion in GaAs via the kick‑out mechanism and the conversion of surface layers into GaN and GaNAs compounds. He investigated how nitridation temperature, porosity of GaAs substrates, and post‑growth annealing influence the structural, morphological, and optical properties of the resulting heterostructures. These studies clarified the formation of cubic and hexagonal GaN phases, the role of porous GaAs in reducing mechanical stress, and the mechanisms governing the luminescence of GaN and GaNAs layers. His results demonstrated the possibility of controlling the composition and emission properties of GaNAs alloys, improving stoichiometry in GaN films through nitrogen‑radical annealing, and optimizing nitridation parameters to achieve high‑quality nitride layers on GaAs‑based substrates. This research provides a comprehensive understanding of nitride formation on GaAs and establishes porous GaAs as a promising platform for stress‑reduced GaN‑based heterostructures.

      1.Revenko A.S. – Properties of GaNAs and GaN, obtained by nitridation of porous GaAs substrate // Sensor Electronics and Microsystem Technologies, 2008 №2, pp. 94–99, https://doi.org/10.18524/1815-7459.2008.2.114588

      2.Kidalov V.V., Beji L., Sukach G.A., Revenko A., Bayda A.D. – Properties of GaN/por-GaAs structure obtained by nitridation of porous GaAs // Photoelectronics, 2006, Vol. 15, pp. 118–122, http://www.scopus.com/inward/record.url?eid=2-s2.0-32844455200&partnerID=MN8TOARS

      3.A. Sukach, V.V. Kidalov, A.S. Revenko – Substrates for epitaxial growth of nitrides of group III // Monograph, Kyiv, The Fourth Wave, 2007 (Ukrainian)

      4.A. Sukach, V.V. Kidalov, A.S. Revenko – About Process of Convertation of GaAs Top Layer into GaN at Nitridation // Physics and Chemistry of Solid State, V. 7, №3 (2006), pp. 442–445

      5.Kidalov V.V., Sukach G.A., Revenko A.S., Bayda A.D. – Properties of cubic GaN films obtained by nitridation of porous GaAs (001) // Phys.Stat. Sol. (a), 2005, Vol. 202, №8, pp. 1668–1672 https://doi.org/10.1002/pssa.200461215

      6.Kidalov V.V., Sukach G.A., Revenko A.S., Potapenko E.P. – Photoluminescent and structural properties of GaN thin films obtained by radical-beam gettering epitaxy on porous GaAs(001) // Journal of Luminescence, 2003, Vol. 102–103, pp. 712–714 , https://doi.org/10.1016/s0022-2313(02)00629-4

      7.V. Kidalov, G.A. Sukach, A.S. Revenko – The Structure and Luminescence of GaN Films Prepared by Radical Beam Epitaxy on Porous GaAs (111) Substrates // Russian Journal of Physical Chemistry, Vol. 77, No. 10, 2003, p. 1864 – 1867, http://www.scopus.com/inward/record.url?eid=2-s2.0-0242511808&partnerID=MN8TOARS

      8.Kidalov, V.V., Sukach, G.A., Revenko, A.S. et al. – Ultraviolet luminescence of thin GaN films grown by radical-beam gettering epitaxy on porous GaAs(111) substrates. Semiconductors (2003) 37, 1264–1265 (2003) https://doi.org/10.1134/1.1626205

      9.Vlasenko, N.A.; Kotlyarevsky, M.B.; Denisova, Z.L.; Kidalov, V.V.; Kononets, Ya.F.; Revenko, A.S. – Effect of Co-Doping with Oxygen on the Characteristics of ZnS : Mn Thin-Film Electroluminescent Structures // physica status solidi (a) (2002), 193, No. 2, 338–346, https://doi.org/10.1002/1521-396x(200209)193:2%3C338::aid-pssa338%3E3.0.co;2-8

      10.B. Kotlyarevskii; G. A. Sukach; V. V. Kidalov; A. S. Revenko – Luminescence of GaN Layers Grown on GaAs Substrates by the Method of Radical‐Beam Epitaxy // Journal of Applied Spectroscopy, Volume 69, pages 270–274, (2002), https://doi.org/10.1023/a:1016101605174

 

Expert’s message

      Wide‑bandgap and ultra‑wide‑bandgap semiconductors continue to reshape modern power electronics, optoelectronics, and materials engineering. Our recent progress in modelling and experimentally studying Ga₂O₃, GaN, GaNAs, ZnO, and SiC films on silicon‑based and porous substrates demonstrates that cost‑effective deposition methods, combined with advanced simulation tools, can significantly improve structural quality, reduce mechanical stress, and expand device‑level functionality. At the same time, uncertainty‑aware modelling of electrochemical processes opens new possibilities for developing more controlled and predictable technological cycles in the growth of semiconductor thin films. I look forward to collaborating with colleagues across academia and industry to further advance these materials and technologies, strengthen the wide‑bandgap semiconductor ecosystem, and accelerate their transition into practical high‑performance applications.

 

Conferences

      1.Computational Psychiatry Conference, Dublin, 2023, “A Aamified task for studying reward processing”, Andriy Revenko, Lili Zhang, Giovanni Di Liberto, Tomas Ward, Robert Whelan, 2023, Dublin, TCD

      2.Kidalov V.V., Beji L., Suckach G. A., Revenko A.S., Bayda A.D., and Yatsenko Y. Raman spectroscopy and morphology investigation of porous GaAs // E-MRS Fall meeting. Section Interfacial processes and properties of advanced materials (5–9 September, 2005). – Warsaw, Poland, 2005. – P. 145.

      3.Kidalov V.V., Sukach G.A., Beji L., Revenko A.S., and Bayda A.D. Properties of Porous GaAs Substrate for III-N Epitaxy // 2008 Fall Meeting of Electrochemical Society of Japan (ECSJ), Section L1 – Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI (16–21 October, 2005). – Los Angeles, California, USA. – Abs. №808.

      4.Kidalov V.V., Revenko A.S. Simulation of Diffusion Process at Nitridation of GaAs Substrate // 2007 Fall Meeting of Electrochemical Society of Japan (ECSJ), Section – Organic & Biological Electrochemistry (May 15–20, 2005). – Quebec City, Canada, 2005. – Abs. №1405.

      5.Kidalov V.V., Sukach G.A., Revenko A.S., and Bayda A.D. Strain relaxation in zincblende GaN layers on porous GaAs (001) substrates // 2007 Fall Meeting of Electrochemical Society of Japan – Section Nanotechnology (May 15–20, 2005). – Quebec City, Canada, 2005. – Abs. №101.

      6.Kidalov V.V., Sukach G.A., and Revenko A.S. Model of the nitridation process of nanoporous GaAs surface // The Fifth International Conference on Low Dimensional Structures and Devices (12–17 December, 2004). – Cancún, Mayan Riviera, Mexico, 2004. – P. 368–369.

      7.Kidalov V.V., Sukach G.A., Shvets A.Y., Revenko A.S., and Bayda A.D. Porous GaAs as soft substrate for cubic GaN films // 4th International Conference – Porous Semiconductors Science and Technology (14–19 March, 2005). – Cullera–Valencia, Spain: Technical University of Valencia, 2004. – P. 368–369.

      8.Kidalov V.V., Sukach G.A., Revenko A.S., and Bayda A.D. Nitridation of porous GaAs (111) // 5th International Symposium on Blue Laser and Light Emitting Diodes – ISBLLED-2004 (15–19 March, 2004). – Gyeongju, Korea, 2004. – Pa12 №1091.

      9.Kidalov V.V., Sukach G.A., Revenko A.S., and Bajda A.D. Properties of Porous Arsenide of Gallium // 2004 Fall Meeting of Electrochemical Society of Japan (ECSJ), Section G1 – Third International Symposium on Pits and Pores (3–8 October, 2004). – Honolulu, Hawaii, USA, 2004. – Abs №789.

      10.Kidalov V.V., Revenko A.S., Sukach G.A. Influence of the morphology of a porous GaAs substrate on the photoluminescence of GaN films produced by radical beam gettering epitaxy // Gallium, Aluminum and Indium Nitrides (3–4 February, 2003). – St. Petersburg: St. Petersburg State Polytechnic University, 2003. – P. 75–76.

      11.Kidalov V.V., Sukach G.A., Petukhov A.O., Revenko A.S., and Potapenko E.P. Photoluminescent properties of GaN thin films, obtained by the treatment of porous GaAs substrates in active nitrogen radical // International Conference on Luminescence and Optical Spectroscopy of Condensed Matter (24–29 August, 2002). – Budapest. – P. 116.

      12.Kidalov V.V., Sukach G.A., Revenko A.S., and Petukhov A.A. GaN thin films luminescence which have been grown by radical-ray epitaxy // Second International Workshop – Nucleation and Non-linear Problems in First Order Phase Transitions (1–5 July, 2002). – St. Petersburg: Institute of Mechanical Engineering Problems of the Russian Academy of Sciences, 2002. – P. 67.