Paper Sharing
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【International Papers】In-situ reflectance analysis of Si-doped β-Ga₂O₃ films grown by MOVPE: The influence of doping concentration and substrate conductivity
[ 2025-03-21 ] -
【Epitaxy Papers】Investigation of electronic structure, photoelectric and thermodynamic properties of Mg-doped β-Ga₂O₃ using first-principles calculation
[ 2025-03-21 ] -
【Epitaxy Papers】Thermal Annealing Restricts the Rotation Domains of Epitaxial β-Ga₂O₃ Thin Films on Off-Angle Sapphire Substrates, Enabling Ultrahigh-Sensitivity Solar-Blind Deep UV Photodetector
[ 2025-03-21 ] -
【Epitaxy Papers】Features of the Ga₂O₃ Layers Synthesized on Silicon by Molecular Layering
[ 2025-03-21 ] -
【Epitaxy Papers】Epitaxial lateral overgrowth of ε-Ga₂O₃ by metal–organic chemical vapor deposition
[ 2025-03-21 ] -
【Member Papers】 Xidian University --- Improved crystal quality of β-Ga₂O₃ on sapphire (0001) substrates by induced-nucleation technique and enhancement of Ga₂O₃ UV photodetectors performance
[ 2025-03-20 ] -
【Domestic Papers】 University of Science and Technology of China --- Crystal-phase engineering of ε-Ga₂O₃ for high-performance deep UV photodetectors via MOCVD
[ 2025-03-20 ] -
【Domestic Papers】Peking University --- Scintillation Properties of β-Ga₂O₃ Under the Excitation of Ultra-High-Charge Electron Bunches
[ 2025-03-20 ] -
【Device Papers】The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga₂O₃ Schottky barrier diode
[ 2025-03-20 ] -
【Device Papers】Effects of surface ultraviolet/ozone treatment on the electrical characteristics of Pt/Ga₂O₃/SiC Schottky diodes
[ 2025-03-20 ]
