Paper Sharing
-
【Member Papers】Nitrogen Annealing for Defect Recovery in Low-fluence Ion-irradiated β-Ga₂O₃ Schottky Barrier Diodes
[ 2026-03-16 ] -
【Epitaxy Papers】Homoepitaxial growth of (100) Si-doped β-Ga₂O₃ films via MOCVD using TMGa: Effects of growth temperature and oxygen flow rate
[ 2026-03-16 ] -
【Epitaxy Papers】Stoichiometry-Driven Tuning of Hole Conductivity in MOCVD-Grown β-Ga₂O₃ on r-Sapphire Substrates
[ 2026-03-16 ] -
【Member Papers】Origin of suppressed ferroelectricity in κ-Ga₂O₃: interplay between polarization and lattice domain walls
[ 2026-03-13 ] -
【Member Papers】Solar‐Blind Enhanced Dual‐Band Ultraviolet Photodetector
[ 2026-03-13 ] -
【Substrate Papers】Radiation tolerance of Ga₂O₃ for harsh environment applications: Neutron irradiation and defect studies
[ 2026-03-13 ] -
【Substrate Papers】Surface termination of β-Ga₂O₃ (100) as-cleaved single crystals
[ 2026-03-13 ] -
【Domestic Papers】Effects of fluorine on the optoelectronic properties and crystal field symmetry of silicon-based erbium doped gallium oxide films and devices
[ 2026-03-12 ] -
【Member Papers】Impact of Proton Irradiation and Oxygen Annealing on the Photoluminescence and Bandgap of β-Ga₂O₃ Epitaxial Wafer
[ 2026-03-12 ] -
【International Papers】Phonon Thermal Transport and Cooling Limits in Submicron Heteroepitaxial β-Ga₂O₃ Films on SiC
[ 2026-03-12 ]
