Paper Sharing
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【Member Papers】2.5 kV/674 MW/cm² or 100 A/2 kV β-Ga₂O₃ heterojunction diodes with large surge current and small recovery time
[ 2026-01-28 ] -
【Member Papers】Ultrahigh Dielectric Permittivity in Ultrathin 2D β‑Ga₂O₃ for Advanced Dielectric Applications
[ 2026-01-28 ] -
【Epitaxy Papers】The Growth of Doped β-Ga₂O₃ Thin Films on Quartz and Al₂O₃ Substrates by Using Sol Gel Method
[ 2026-01-28 ] -
【Epitaxy Papers】The effect of hydrogen annealing on the electrical properties of β-Ga₂O₃/4H-SiC MOSFETs grown by liquid-injection MOCVD
[ 2026-01-28 ] -
【Member Papers】The Demonstration of Amperometric Ga₂O₃ Two-step Trench Schottky Barrier Diode
[ 2026-01-27 ] -
【Device Papers】Experimental Study on Dynamic Resistance Characteristics of Ga₂O₃ Schottky Barrier Diodes
[ 2026-01-27 ] -
【Device Papers】Nitrogen Ion Implantation at Trench Bottoms for Improved Reverse Blocking Performance in β-Ga₂O₃ Schottky Barrier Diode
[ 2026-01-27 ] -
【Member Papers】Explainable Analysis and Optimization of the Thermal Field in Gallium Oxide Single Crystal Growth Based on Machine Learning
[ 2026-01-26 ] -
【International Papers】Mist-chemical vapor deposition grown Ge-doped α-Ga₂O₃ thin films with high electron mobility
[ 2026-01-26 ] -
【Others Papers】Ultrafast Laser-Induced Defects in β-Gallium Oxide Below Ablation Threshold
[ 2026-01-26 ]
