【Others Papers】Engineered Optical and Electronic Properties in β-Ga₂O₃/SnO₂ Nanowire Networks

      Researchers from the European Synchrotron Radiation Facility have published a dissertation titled "Engineered Optical and Electronic Properties in β-Ga₂O₃/SnO₂ Nanowire Networks" in Nano Letters.

Abstract

      Integration of semiconductor nanowires is critical for developing scalable and versatile nanodevices, but challenges remain in tailoring optical emission, forming reliable p–n junctions, and ensuring consistent nanoscale interconnection. Here, we investigate Ga₂O₃/SnO₂ multiwire architectures using synchrotron-based X-ray fluorescence (XRF), X-ray excited optical luminescence (XEOL), X-ray absorption near-edge spectroscopy (XANES), and first-principles simulations. We map dopant distribution, analyze nanoscale optical responses, and determine dopant atomic coordination. The central wire is predominantly Sn-doped Ga₂O₃, while crossed wires are Ga-doped SnO₂. XEOL maps reveal a pronounced enhancement of the 3.5 eV ultraviolet emission in Ga₂O₃ at the junctions, enabling controlled optical modulation. XANES and ab initio calculations confirm that Sn and Ga dopants preferentially occupy octahedral sites, introducing donor levels in Ga₂O₃ and acceptor levels in SnO₂. This research significantly advances our understanding of dopant effects in complex semiconductor nanowire systems, paving the way for controlled optical emissions in Ga₂O₃/SnO₂ multiwire architectures.

DOI：

https://doi.org/10.1021/acs.nanolett.5c02409