【Epitaxy Paper】Ta-Doping-Induced Structural Modulation and Defect Engineering in β-Ga₂O₃ Films on 4H-SiC for Tailored Optoelectronic Properties

      Researchers from Kunming University of Science and Technology have published a dissertation titled " Ta-Doping-Induced Structural Modulation and Defect Engineering in β-Ga₂O₃ Films on 4H-SiC for Tailored Optoelectronic Properties " in Vacuum.

Abstract

      In this study, Ta-doped β-Ga₂O₃ films on 4H-SiC substrate were produced via RF magnetron sputtering at the power of 10-40 W. It was found that the film showed improved crystallinity and uniform grain size at the sputtering power of 30 W. The Ta doping induced lattice distortion of the β-Ga₂O₃ was observed by high-resolution transmission electron microscopy. The films exhibited the high optical transparency over 85% in the visible range, with a UV absorption peak shifted to 381.34 nm. Optimized performance involves substituting two Ga atoms with Ta. The absorption spectrum peak is associated with the Ta-5d and Ga-4p orbital transition following photon absorption. Current work provided a useful strategy for the improved performance of β-Ga₂O₃ films by Ta doping.

DOI：

https://doi.org/10.1016/j.vacuum.2026.115783