Patents
【Patenes】Gallium Oxide Patent Weekly Report (Issue 11, September)
日期：2026-09-18阅读：75
To further strengthen information exchange within the gallium oxide industry and help stakeholders stay informed of the latest technological developments, the Asian Gallium Oxide Alliance (AGOA) has launched the Gallium Oxide Patent Weekly column. This series will continuously compile and publish newly disclosed patent applications and technological advances in the gallium oxide field.
As an important indicator of technological innovation, patents reflect R&D trends and strategic layout across the industrial chain. This column focuses on crystal growth, material preparation, defect engineering, device development, process optimization, and emerging applications, providing enterprises, universities, and research institutes with insights into technology trends while supporting the continued development of the gallium oxide industry.
This eleventh issue reviews gallium oxide-related patent applications published during the seconed week of September 2026 (September 7–September 13).
Surface Acoustic Wave Device and Fabrication Method(Published September 8)
According to information released by the China National Intellectual Property Administration (CNIPA), Fujian Sunwise Semiconductor Technology Co., Ltd. has filed a patent application titled “Surface Acoustic Wave Device and Fabrication Method Thereof”, with publication number CN122740789A and application number 2026104455850.
The invention relates to the field of semiconductor devices and discloses a surface acoustic wave (SAW) device and its fabrication method. The surface acoustic wave device includes a supporting substrate, which has a first surface and a second surface arranged opposite to each other; an ε-phase gallium oxide (ε-Ga₂O₃) layer disposed on either the first or second surface; a dielectric layer formed on the ε-Ga₂O₃ layer; a piezoelectric layer formed on the dielectric layer; and interdigital electrodes arranged on the piezoelectric layer.
The implementation of the invention can optimize the device’s thermal stability and acoustic isolation performance, thereby improving its quality factor (Q factor).
ε-Phase Gallium Oxide Epitaxial Structure, Fabrication Method Thereof, and Semiconductor Device(Published September 8)
According to information released by the China National Intellectual Property Administration (CNIPA), Fujian Sunwise Semiconductor Technology Co., Ltd. has filed a patent application titled “ε-Phase Gallium Oxide Epitaxial Structure, Fabrication Method Thereof, and Semiconductor Device”, with publication number CN122742623A and application number 2026106384760.
The invention discloses an ε-phase gallium oxide epitaxial structure, its fabrication method, and related semiconductor devices, involving the field of semiconductor thin-film growth technology.
The ε-phase gallium oxide epitaxial structure includes a substrate, a superlattice buffer layer sequentially stacked on the substrate, and an ε-phase gallium oxide layer formed on the buffer layer. The superlattice buffer layer consists of alternately stacked first sublayers and second sublayers.
Specifically, the first sublayer may consist of (AₓGa₁₋ₓ)₂O₃ layers and Ga₂O₃ layers, where A represents Fe, Al, and/or In; alternatively, the superlattice buffer layer may consist of alternately stacked BO layers and Ga₂O₃ layers, where B represents Mg or Zn. Other possible buffer layer structures include alternately stacked AlN layers and first GaN layers, AlGaN layers and second GaN layers, or Mo layers and SiO₂ layers.
The implementation of this invention can improve the crystal quality and interface stability of ε-phase gallium oxide layers, providing a potential pathway for advancing high-quality ε-Ga₂O₃ epitaxial growth and related semiconductor device applications.
Gallium Oxide-Based Optoelectronic Synaptic Array, Fabrication Method Thereof, and Imaging Method(Published September 11)
According to information released by the China National Intellectual Property Administration (CNIPA), the Institute of Semiconductors, Chinese Academy of Sciences has filed a patent application titled “Gallium Oxide-Based Optoelectronic Synaptic Array, Fabrication Method Thereof, and Imaging Method”, with publication number CN122742485A and application number 2026107151132.
The invention provides a gallium oxide-based optoelectronic synaptic array, along with its fabrication method and imaging method. The optoelectronic synaptic array includes an electrode interconnection structure and multiple basic synaptic devices arranged in an array.
Each basic synaptic device includes:
a gallium oxide substrate;a light absorption layer disposed on the surface of the gallium oxide substrate;an interdigitated electrode structure, including Schottky contact electrodes and ohmic contact electrodes arranged in different regions on the side of the light absorption layer away from the gallium oxide substrate. The Schottky contact electrodes and ohmic contact electrodes form Schottky junctions on the surface of the light absorption layer.
The finger structures of the Schottky contact electrodes and ohmic contact electrodes are arranged in an interleaved pattern. The spacing between adjacent fingers (interdigitated electrode spacing L) is determined according to the oxygen vacancy concentration on the surface of the gallium oxide substrate.
The device further includes an encapsulation layer, which covers the exposed regions of the light absorption layer as well as the sides of the Schottky contact electrodes and ohmic contact electrodes facing away from the light absorption layer.
The implementation of this invention provides a gallium oxide-based optoelectronic synaptic array structure, offering potential applications in neuromorphic computing, intelligent imaging, and optoelectronic information processing.
High-Efficiency Doping Method for Heteroepitaxial β-Ga₂O₃ Films and Fabrication Method for MOSFET Devices Thereof(Published September 11)
According to information released by the China National Intellectual Property Administration (CNIPA), Nanjing University has filed a patent application titled “High-Efficiency Doping Method for Heteroepitaxial β-Ga₂O₃ Films and Fabrication Method for MOSFET Devices Thereof”, with publication number CN122742640A and application number 2026108692573.
The invention discloses a high-efficiency doping method for heteroepitaxial β-Ga₂O₃ thin films and a corresponding method for fabricating MOSFET devices. The method employs metal-organic chemical vapor deposition (MOCVD) to epitaxially grow high-quality gallium oxide thin films on sapphire substrates.
The invention enables high-efficiency n-type doping and carrier activation, and facilitates the fabrication of heteroepitaxial β-Ga₂O₃ devices. Based on this approach, defects and dislocations in the nucleation layer of gallium oxide films can be effectively reduced, enabling the growth of high-quality gallium oxide thin films with improved crystalline quality and electrical conductivity.
By optimizing the heteroepitaxial growth process and post-deposition annealing (PDA) process, the invention achieves efficient doping while reducing the production cost of gallium oxide thin films. Compared with existing technologies, this invention demonstrates significant innovation in both material epitaxy and device fabrication, with broad potential for future applications.
Gallium Oxide Optoelectronic Synaptic Device and Fabrication Method Thereof(Published September 11)
According to information released by the China National Intellectual Property Administration (CNIPA), the Institute of Semiconductors, Chinese Academy of Sciences has filed a patent application titled “Gallium Oxide Optoelectronic Synaptic Device and Fabrication Method Thereof”, with publication number CN122708933A and application number 2026106730852.
The invention provides a gallium oxide-based optoelectronic synaptic device and its fabrication method. The device includes:
a single-crystal gallium oxide substrate;a light absorption layer formed on the surface of the single-crystal gallium oxide substrate, where the light absorption layer exhibits in-plane anisotropy and contains oxygen vacancies;a first electrode and a second electrode, which are arranged separately on the gallium oxide substrate and partially cover the surface of the light absorption layer, forming an asymmetric electrode structure to generate a built-in electric field.
When the light absorption layer is irradiated with solar-blind ultraviolet (UV) light, photogenerated carriers are generated. Under the influence of the built-in electric field, these carriers are separated. A portion of the separated electrons migrate toward the first or second electrode, generating a photocurrent that varies with the polarization direction of the incident light. Another portion of the electrons are captured by oxygen vacancies and gradually released after the illumination is removed.
The device further includes a polarization-ratio amplification circuit, whose input terminal is electrically connected to the first or second electrode. The circuit converts the received photocurrent into a voltage signal and amplifies subtle voltage variations into output electrical signals with significant changes corresponding to the polarization direction of the incident light.
This invention provides a gallium oxide-based optoelectronic synaptic device capable of polarization-sensitive photoresponse, offering potential applications in polarization imaging, neuromorphic vision systems, and intelligent optoelectronic sensing.
POI Substrate, Fabrication Method Thereof, and Acoustic Device(Published September 11)
According to information released by the China National Intellectual Property Administration (CNIPA), Fujian Sunwise Semiconductor Technology Co., Ltd. has filed a patent application titled “POI Substrate, Fabrication Method Thereof, and Acoustic Device”, with publication number CN122699548A and application number 202610674239X.
The invention relates to the field of semiconductor technology and discloses a POI substrate, its fabrication method, and related acoustic devices.
The fabrication method of the POI substrate includes the following steps:
providing a substrate;growing an amorphous gallium oxide layer on the substrate;growing a nanocrystalline gallium oxide layer on the amorphous gallium oxide layer, wherein the nanocrystalline gallium oxide layer exhibits c-axis orientation perpendicular to the cross-sectional plane;activating the nanocrystalline gallium oxide layer to obtain a first intermediate structure;performing ion implantation into a piezoelectric substrate to form a delamination defect layer at a predetermined position within the piezoelectric substrate, obtaining a second intermediate structure A;bonding the first intermediate structure with the second intermediate structure A to obtain a third intermediate structure A;processing the third intermediate structure A using pulsed laser treatment to convert the nanocrystalline gallium oxide layer into an ε-phase gallium oxide (ε-Ga₂O₃) layer;separating and partially exfoliating the piezoelectric substrate along the delamination defect layer to form a piezoelectric layer.
The implementation of this invention can improve the thermal conductivity and reliability of POI substrates, providing potential advantages for high-performance acoustic devices and related semiconductor applications.
In addition to patents focusing on gallium oxide materials, several patents published this week also involve the application of gallium oxide as a functional material in other fields, which are provided for readers’ reference.
Method for Recovering High-Purity Gallium from Gallium-Containing Lime Slag(Published September 8)
According to information released by the China National Intellectual Property Administration (CNIPA), Jiangxi Enkai Metal Technology Co., Ltd. has filed a patent application titled “Method for Recovering High-Purity Gallium from Gallium-Containing Lime Slag”, with publication number CN122727570A and application number 2026108684613.
The invention discloses a method for recovering high-purity gallium from gallium-containing lime slag. The method includes the following steps:
During the ball milling process, a sulfuric acid-containing liquid-phase medium is added for slurry preparation, followed by the addition of hydrochloric acid to perform mixed-acid leaching. Iron powder is then used to reduce Fe³⁺ in the leachate to Fe²⁺. Gallium is enriched through solvent extraction using an organic phase consisting of TBP (tributyl phosphate) and isooctanol.
After extraction, neutralization and precipitation are performed, followed by heated washing to obtain purified gallium hydroxide. An electrolytic feed solution is then prepared, followed by a two-stage impurity removal process: the first stage uses an oxidizing agent and a calcium-based reagent, while the second stage employs sulfides and transition metal salts for further purification. Finally, high-purity metallic gallium with a purity of ≥99.99% is obtained through electrolytic refining.
By combining mixed-acid leaching with ball-milling-assisted pre-calciation, iron removal through reduction prior to extraction, heated washing, and stepwise synergistic deep impurity removal, the method enables efficient gallium recovery from high-calcium gallium-containing materials. The overall recovery rate can exceed 92%, while the concentrations of restricted impurities such as arsenic and germanium in the final product are reduced to below 5 ppm. The process demonstrates good stability and is suitable for industrial-scale production.
SiO₂ Molecular Sieve-Coated Cr³⁺-Doped Gallium Oxide Near-Infrared Phosphor and Preparation Method Thereof(Published September 8)
According to information released by the China National Intellectual Property Administration (CNIPA), Lanzhou University has filed a patent application titled “SiO₂ Molecular Sieve-Coated Cr³⁺-Doped Gallium Oxide Near-Infrared Phosphor and Preparation Method Thereof”, with publication number CN122706347A and application number 2026108674132.
The invention discloses a silicon dioxide molecular sieve-coated Cr³⁺-doped gallium oxide near-infrared phosphor and its preparation method, belonging to the field of luminescent material fabrication technology.
The chemical formula of the near-infrared phosphor is Ga₂₋ₓCrₓO₃@SBA-15, where 0.002 ≤ x ≤ 0.010. The phosphor is prepared by growing optically active Ga₂₋ₓCrₓO₃ crystals inside the pores of a silicon dioxide molecular sieve.
Benefiting from the confinement effect provided by the molecular sieve structure, the proposed method enables efficient synthesis of SiO₂-coated Ga₂₋ₓCrₓO₃ near-infrared phosphors. The preparation process is environmentally friendly, while allowing controllable regulation of the phosphor’s microscopic size and morphology.
The resulting phosphor exhibits an emission spectrum in the wavelength range of 650–900 nm, with a favorable full width at half maximum (FWHM) characteristic. It shows strong potential for applications in near-infrared phosphor-converted light-emitting diodes (NIR pc-LEDs).
Method for Recovering Gallium from Neodymium-Iron-Boron Waste(Published September 11)
According to information released by the China National Intellectual Property Administration (CNIPA), Jiangxi University of Science and Technology has filed a patent application titled “Method for Recovering Gallium from Neodymium-Iron-Boron Waste”, with publication number CN122706983A and application number 2026111740924.
The invention provides a method for recovering gallium from neodymium-iron-boron (NdFeB) waste, relating to the field of comprehensive resource utilization technology.
In this method, waste NdFeB magnets are first crushed and screened, then added to a sulfuric acid solution at a specific ratio and reacted thoroughly in a high-pressure reactor. After solid-liquid separation, iron remains in the residue in the form of hematite, while rare earth elements and gallium are transferred into the filtrate.
A polycarboxylic acid coordination agent is then added to the filtrate. By utilizing the different chemical behaviors of the reagent—forming insoluble precipitates with rare earth ions while generating soluble complex anions with gallium ions—the method enables the selective separation of rare earth elements and gallium.
The gallium-containing filtrate is subsequently introduced into an extraction tank, where gallium is extracted through cross-flow extraction using an amine-based extractant. The gallium-loaded organic phase is then subjected to counter-current stripping to obtain a high-purity gallium solution. After precipitation and calcination, high-purity gallium oxide (Ga₂O₃) is produced.
The invention enables the co-recovery of gallium and rare earth elements from NdFeB waste with a shorter process flow, high resource utilization efficiency, and improved environmental compatibility, demonstrating significant potential for industrial applications.
