Patents
【Patenes】Gallium Oxide Patent Weekly Report (Issue 15, October)
日期：2026-10-23阅读：173
To further strengthen information exchange within the gallium oxide industry and help stakeholders stay informed of the latest technological developments, the Asian Gallium Oxide Alliance (AGOA) has launched the Gallium Oxide Patent Weekly column. This series will continuously compile and publish newly disclosed patent applications and technological advances in the gallium oxide field.
As an important indicator of technological innovation, patents reflect R&D trends and strategic layout across the industrial chain. This column focuses on crystal growth, material preparation, defect engineering, device development, process optimization, and emerging applications, providing enterprises, universities, and research institutes with insights into technology trends while supporting the continued development of the gallium oxide industry.
This fifteenth issue reviews gallium oxide-related patent applications published during the third weeks of October 2026 (October 12–October 18).
A Seed Crystal for Growing Gallium Oxide Crystals, and Its Preparation Method and Application (Published October 13)
According to information released by the China National Intellectual Property Administration (CNIPA), Hangzhou Garen Semiconductor Co., Ltd. has filed a patent application entitled “A Seed Crystal for Growing Gallium Oxide Crystals, and Its Preparation Method and Application.” The publication number is CN122898955A, and the application number is 2026111881640.
The present invention relates to gallium oxide crystal technology, specifically to a seed crystal for growing gallium oxide crystals, its preparation method, and its application.
The seed crystal for growing gallium oxide crystals is a circular wafer with a diameter of at least 2 inches and a thickness of at least 2 mm. The seed crystal has opposing upper and lower surfaces along its thickness direction. Both surfaces are polished and free of scratches, with an arithmetic average surface roughness (Ra) of ≤ 10 nm. The total indicator reading (TIR) of the upper surface and/or lower surface is < 0.4 mm. The total thickness variation (TTV) of the seed crystal is < 0.5 mm, edge chipping is zero, and the full width at half maximum (FWHM) is ≤ 150 arcseconds.
The seed crystal features a circular wafer geometry, enabling seamless integration with standard industrial circular substrate processing workflows and reducing processing complexity and costs. Its large diameter and substantial thickness help ensure the safety of large-size crystal growth. Furthermore, the quantified quality specifications provide objective criteria for standardized seed crystal production and evaluation, helping ensure the high quality of the resulting crystals.
A Surface Acoustic Wave (SAW) Device, and Its Preparation Method and Application (Published October 13)
According to information released by the China National Intellectual Property Administration (CNIPA), The Hong Kong University of Science and Technology (Guangzhou) has filed a patent application entitled “A Surface Acoustic Wave Device, and Its Preparation Method and Application.” The publication number is CN122908734A, and the application number is 2026110875144.
The present invention provides a surface acoustic wave (SAW) device, its preparation method, and its application. The SAW device comprises a substrate, an ε-phase gallium oxide (ε-Ga₂O₃) layer disposed on the substrate, an interdigital transducer (IDT) structure disposed on the ε-Ga₂O₃ layer, and a protective layer covering both the ε-Ga₂O₃ layer and the IDT structure.
By introducing ε-Ga₂O₃ piezoelectric thin-film material and adding a protective layer, the invention employs an aerosol-assisted chemical vapor deposition (AACVD) process to achieve controlled-thickness growth. This approach provides the device with a more favorable foundation for enhanced acoustic and piezoelectric performance at the material level.
A Method for Preparing High-Purity Gallium Oxide Semiconductor Materials (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Guangzhou Zhuoguang Technology Co., Ltd. has filed a patent application entitled “A Method for Preparing High-Purity Gallium Oxide Semiconductor Materials.” The publication number is CN122918694A, and the application number is 2026113547419.
The present invention discloses a method for preparing high-purity gallium oxide semiconductor materials and relates to the technical field of semiconductor material preparation.
The method employs a bottomless cold crucible assembled from multiple mutually insulated water-cooled copper segments, combined with a high-frequency induction coil that directly couples with the gallium oxide powder, enabling the powder to generate heat internally. A solidified shell formed by the material itself completely isolates the melt from the metallic crucible walls, thereby preventing the introduction of external metallic impurities.
During the shoulder-expansion and constant-diameter growth stages, the power of a surrounding infrared radiation compensation array is independently adjusted by zone based on feedback regarding the temperature difference between the center and edge of the solid–liquid interface. Simultaneously, the convection rate of the Ar/O₂ protective gas is regulated in coordination. This approach transforms steep temperature gradients into gently curved, smooth, and flexible isothermal surfaces, suppressing thermal stress concentration during the growth of large-size crystals.
The resulting gallium oxide single crystals exhibit no incorporation of external deep-level impurities, low stress, and large crystal dimensions, making them suitable for high-power power electronic devices and solar-blind ultraviolet detectors.
A β-Gallium Oxide Single-Crystal Growth Apparatus and Method Using the Edge-Defined Film-Fed Growth (EFG) Technique (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Beijing Minggal Semiconductor Co., Ltd. has filed a patent application entitled “A β-Gallium Oxide Single-Crystal Growth Apparatus and Method Using the Edge-Defined Film-Fed Growth (EFG) Technique.” The publication number is CN122918698A, and the application number is 2026113031176.
The present invention discloses an apparatus and method for growing β-gallium oxide single crystals using the edge-defined film-fed growth (EFG) technique.
In the apparatus, the width of the capillary slit in the die gradually decreases from bottom to top. Grooves are provided on the upper surface of the die on both sides of the capillary slit. These grooves run parallel to the slit, with both ends extending to the respective ends of the die's upper surface. The distance between the grooves on either side of the capillary slit is equal to the designed thickness of the β-gallium oxide single crystal.
By progressively narrowing the capillary slit from bottom to top, the invention addresses nonuniform melt supply across the width of the growth interface. The addition of grooves eliminates edge twinning and cracking defects, effectively suppressing through-going twins. This enables the stable production of 4–6-inch, thick, twin-free β-gallium oxide plate-shaped single crystals, significantly reducing material losses associated with slicing and improving raw material utilization. The technology is well suited for large-scale industrial production.
A Gallium Oxide Substrate, Its Chemical Mechanical Polishing Method, and Applications (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Zhejiang Nengpeng Semiconductor Materials Co., Ltd. has filed a patent application entitled “A Gallium Oxide Substrate, Its Chemical Mechanical Polishing Method, and Applications.” The publication number is CN122914027A, and the application number is 2026110577499.
The present invention discloses a gallium oxide substrate, its chemical mechanical polishing (CMP) method, and its applications. It falls within the technical field of ultra-precision semiconductor material processing.
The method involves sequentially subjecting the gallium oxide substrate to rough polishing, fine polishing, and final polishing, while controlling the substrate's surface roughness to Ra ≤ 0.1 nm and its subsurface damage depth to < 10 nm.
During rough polishing, a composite slurry containing a cleavage inhibitor is used. Fine polishing is performed on different crystal planes of the substrate after rough polishing using a composite abrasive containing nano-ceria and boehmite. Final polishing is conducted using a neutral polishing slurry under ultrasonic assistance and photocatalytic conditions. The neutral polishing slurry contains ceria abrasives doped with rare-earth ions.
This method not only suppresses cleavage of the gallium oxide substrate during polishing, reduces surface roughness, and minimizes surface defects, but also improves polishing consistency across different crystal planes. It is particularly suitable for semiconductor applications.
A Total Ionizing Dose Radiation-Hardened Gallium Oxide Schottky Diode and Its Preparation Method (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Zhengzhou University has filed a patent application entitled “A Total Ionizing Dose Radiation-Hardened Gallium Oxide Schottky Diode and Its Preparation Method.” The publication number is CN122934833A, and the application number is 202610946738X.
The present invention discloses a gallium oxide Schottky diode resistant to total ionizing dose (TID) radiation and its preparation method. The device comprises a substrate, an epitaxial layer, a backside ohmic contact, and a frontside Schottky contact.
Before forming the Schottky contact, the surface of the epitaxial layer is treated with carbon tetrafluoride (CF₄) plasma to introduce gallium-vacancy acceptor-type defects into the near-surface region, thereby forming a negative space-charge region. This negatively charged region increases the Schottky barrier height, suppresses reverse leakage current, and inhibits radiation-induced holes from migrating toward the interface during total ionizing dose irradiation, thereby reducing the formation of donor-type interface states.
Validation under gamma-ray irradiation demonstrates that the Schottky barrier height of the treated device remains nearly unchanged after total ionizing dose exposure, whereas that of the untreated device decreases significantly.
This invention effectively enhances the total ionizing dose radiation tolerance and electrical stress reliability of gallium oxide Schottky diodes, making them suitable for high-radiation environments, including space applications.
A Gallium Oxide Deep-Ultraviolet Photodetector and Its Preparation Method (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Shenzhen Institute of Information Technology has filed a patent application entitled “A Gallium Oxide Deep-Ultraviolet Photodetector and Its Preparation Method.” The publication number is CN122934922A, and the application number is 2026108726512.
The present application discloses a gallium oxide deep-ultraviolet photodetector and its preparation method. The device incorporates an ultrathin wide-bandgap barrier layer either between the gallium oxide layer and the electrode or between the n-type gallium oxide layer and the p-type semiconductor layer. The ultrathin wide-bandgap barrier layer consists of one or more of the following materials: aluminum oxide, zirconium oxide, hafnium oxide, and aluminum nitride, arranged in a single-layer or multilayer structure.
The ultrathin wide-bandgap barrier layer effectively passivates dangling bonds on the gallium oxide surface, reduces interface trap density, and suppresses leakage current caused by defect-assisted tunneling. It can also form a tunnel heterojunction in conjunction with the gallium oxide layer and other layers. This design helps maintain a high photocurrent response while reducing dark current, thereby improving the device's photo-to-dark current ratio and signal-to-noise ratio.
A Modification Method for Gallium Oxide Photodetectors Using Ultrafast Laser-Induced Oxygen Vacancies (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Hainan Huapu Quantum Materials Co., Ltd. and East China Normal University have jointly filed a patent application entitled “A Modification Method for Gallium Oxide Photodetectors Using Ultrafast Laser-Induced Oxygen Vacancies.” The publication number is CN122934962A, and the application number is 2026108419567.
The present invention discloses a modification method for gallium oxide photodetectors using ultrafast laser-induced oxygen vacancies and relates to the technical field of photodetectors.
The method involves depositing an amorphous gallium oxide thin film on an FTO (fluorine-doped tin oxide) substrate, followed by scanning-line irradiation of the film surface using a laser source focused through an objective lens to introduce oxygen vacancies and reduce surface roughness. An ITO (indium tin oxide) electrode is then deposited to construct a vertically structured ITO/Ga₂O₃/FTO photodetector.
Laser treatment increases the oxygen vacancy concentration at the film surface from 23.18% to 41.57%, reducing the interfacial barrier height at the ITO/Ga₂O₃ interface. As a result, the device exhibits self-powered photoresponse under zero-bias conditions. When the oxygen vacancy concentration exceeds 40%, the photocurrent polarity can be controllably reversed under ultraviolet illumination in the solar-blind wavelength range of 200–280 nm.
By adjusting laser parameters, the invention enables quantitative introduction of oxygen vacancies and precise control of the interfacial barrier height. The method offers advantages including a simple process, non-destructive modification, controllable photocurrent polarity, and self-powered photoresponse.
In addition to patents focusing on gallium oxide materials, several patents published this week also involve the application of gallium oxide as a functional material in other fields, which are provided for readers’ reference.
An Indium Tin Oxide Sputtering Target, Its Preparation Method, and Applications (Published October 13)
According to information released by the China National Intellectual Property Administration (CNIPA), Zhongshan Zhilong New Materials Technology Co., Ltd. has filed a patent application entitled “An Indium Tin Oxide Sputtering Target, Its Preparation Method, and Applications.” The publication number is CN122897676A, and the application number is 2026108000178.
The present invention provides an indium tin oxide (ITO) sputtering target, its preparation method, and its applications, and relates to the technical field of sputtering targets for semiconductor equipment.
The target is prepared from indium oxide, tin oxide, gallium oxide, and calcium hydride through mixing, forming, sintering, and machining. The raw materials are specified in parts by mass as follows: 80–95 parts indium oxide, 5–20 parts tin oxide, 0.01–10 parts gallium oxide, and 0.01–5 parts calcium hydride powder.
By introducing gallium and calcium, the invention employs several mechanisms to improve target performance: hydrogen released through the decomposition of calcium hydride reduces electrical resistivity; nanoscale calcium oxide promotes grain refinement through grain-boundary pinning; and indium–gallium solid-solution formation facilitates sintering and improves densification.
The resulting target achieves a relative density of ≥ 99.0% and an electrical resistivity as low as 1.44 × 10⁻⁴ Ω·cm. The work function of the sputtered film can be reduced to 4.61 eV. Combining high density, low electrical resistivity, and a low work function, the target is suitable for fabricating transparent cathodes for top-emitting organic light-emitting diode (OLED) displays. The preparation process is compatible with existing production lines, offering promising prospects for industrialization.
A Preparation Process for High-Purity Gallium Nitride Sputtering Targets (Published October 16)
According to information released by the China National Intellectual Property Administration (CNIPA), Yaxin Semiconductor Materials (Jiangsu) Co., Ltd. has filed a patent application entitled “A Preparation Process for High-Purity Gallium Nitride Sputtering Targets.” The publication number is CN122916683A, and the application number is 2026110502172.
The present invention relates to the technical field of gallium nitride (GaN) sputtering targets, particularly a preparation process comprising the following steps: (1) cold pressing to form a green body; (2) primary sintering; (3) secondary sintering; (4) cooling and impurity removal to obtain a GaN plate blank; (5) rolling the plate blank; and (6) precision machining to achieve the required dimensions and surface roughness.
The proposed process first involves a reaction between gallium oxide and ammonia to produce porous gallium nitride. Sodium, gallium, and nitrogen gas are then added for a second reaction, ultimately yielding a dense sintered GaN compact. After surface impurity removal and rolling, the compact is processed into a high-purity GaN sputtering target.
The preparation process is straightforward and energy-efficient, making it suitable for broader industrial application.
