【Alliance News】The World’s Premier Gallium Oxide Conference Begins｜AGOA Takes You Inside the 6th International Workshop on Gallium Oxide and Related Materials (IWGO-6)

日期：2026-07-31阅读：150

As a core material in the fourth-generation ultra-wide-bandgap semiconductor field, gallium oxide (Ga₂O₃) has demonstrated tremendous application potential in high-voltage power devices, new energy power electronics, and advanced optoelectronic systems, owing to its outstanding advantages such as an ultra-high breakdown electric field and low conduction losses.

Having witnessed the growth of gallium oxide technology for twelve years, the International Workshop on Gallium Oxide and Related Materials (IWGO) is the world’s premier, most authoritative, and longest-running dedicated international conference in the field of gallium oxide. Recognized as a global benchmark for the development of Ga₂O₃ research, IWGO has become one of the most influential international platforms for academic and industrial exchange in this emerging semiconductor field.

Experts, researchers, institutions, and industry representatives from around the world will gather at the conference to exchange the latest achievements in gallium oxide materials, devices, and industrial development. Together, they will advance technological breakthroughs, overcome key challenges, and accelerate the transition of this next-generation semiconductor material toward broader applications.

IWGO focuses on the development of gallium oxide and related material technologies, with its topics covering the entire fundamental research chain of gallium oxide. The conference encompasses key areas including theoretical calculations and modeling, bulk single-crystal growth, polymorph exploration, epitaxial thin-film fabrication, defect engineering and material characterization, doping regulation, power/RF/UV photodetector device fabrication, heterostructure integration, radiation reliability, emerging ultra-wide-bandgap oxide materials, and industrial applications. It has become one of the most prestigious international academic conferences in the field of gallium oxide and related materials. Since its inception, IWGO has continuously connected global research institutions with industry partners, facilitated technological exchange and international collaboration, and evolved into a specialized platform driving innovation and industrial development in the gallium oxide community.

Twelve Years of Growth:

IWGO Witnesses the Evolution and Advancement of the Gallium Oxide Industry

Since the inaugural IWGO, this global event has embarked on a 12-year journey. Starting in Kyoto, Japan, and traveling through Parma, Italy; Ohio, USA; Nagano, Japan; and Berlin, Germany, IWGO is now returning to Maryland, USA. Its global footprint has continued to expand alongside the technological progress and industrial evolution of gallium oxide, witnessing the transformation of this emerging semiconductor material from fundamental research exploration toward industrial application.

From its early focus on fundamental material properties and crystal growth technologies, gallium oxide research has now expanded to encompass large-size substrates, advanced epitaxial growth, high-performance power devices, defect engineering, and novel ultra-wide-bandgap material systems. The breadth and depth of research have continued to grow, while technological pathways have evolved rapidly.

In recent years, significant breakthroughs have been achieved in large-size wafer fabrication, thick-film epitaxy, high-voltage devices, and advanced defect characterization, accelerating the transition of gallium oxide from laboratory research toward large-scale application development. Through successive editions, IWGO has continuously brought together leading global research teams and industry partners, injecting new momentum into technological innovation and collaborative industrial advancement in the gallium oxide ecosystem.

IWGO 2026:

Focusing on Key Breakthroughs for Gallium Oxide Industrialization

The 6th International Workshop on Gallium Oxide and Related Materials (IWGO-6) will be held from August 2 to August 7, 2026, in Maryland, USA. As one of the most important global conferences in the field of gallium oxide, this event will bring together researchers, companies, and industry experts from China, Japan, the United States, Germany, France, Finland, Spain, and other countries and regions to exchange the latest research achievements and industrial development trends in the field of ultra-wide-bandgap semiconductors.

The five-day conference will feature 72 technical presentations and 126 poster presentations, covering a wide range of cutting-edge topics in gallium oxide materials, devices, and related ultra-wide-bandgap semiconductor technologies. The event will showcase the latest technological advances and innovative achievements worldwide.

Focusing on the key technical challenges in the industrialization of gallium oxide, IWGO-6 will highlight several core areas, including large-size substrates and scalable manufacturing, advanced epitaxial technologies, defect science and microscopic characterization, heterostructure integration and emerging ultra-wide-bandgap materials, high-performance power devices, and reliability research.

This conference will provide a comprehensive view of the transition of gallium oxide and related materials from technological breakthroughs toward industrial applications, further promoting in-depth exchange and collaboration among global research communities and industry partners.

Connecting Global Resources to Build a Collaborative Gallium Oxide Ecosystem

As a professional service platform dedicated to the development of the gallium oxide industry, the Asian Gallium Oxide Alliance (AGOA) has always been committed to building a bridge connecting industry, academia, and international cooperation, promoting global resource sharing and technological exchange in the field of gallium oxide.

As the gallium oxide industry moves from technological breakthroughs toward large-scale applications, strengthening international collaboration and bringing together global innovation forces have become essential drivers for sustainable industry development. Participation in IWGO-6 represents not only an important opportunity for the Alliance to gain deeper insights into global technological frontiers and enhance cooperation with international experts and companies, but also a key initiative to promote open collaboration, strengthen industry connectivity, and advance the construction of a comprehensive gallium oxide ecosystem.

Group photo of Chinese gallium oxide researchers attending IWGO 2024

During the conference, AGOA will actively engage in international exchanges and industry interactions, gaining a deeper understanding of the latest technological developments and industrial trends in the global gallium oxide field. Through the IWGO platform, the Alliance will also showcase China's innovation capabilities in gallium oxide research and industry, further enhancing China's global visibility and engagement in this emerging semiconductor sector.

Meanwhile, AGOA will strengthen communication and collaboration with international experts, researchers, and industry representatives, facilitating technology sharing and cross-border interaction. By bringing together global resources and collective expertise, the Alliance aims to foster an open, collaborative, and synergistic global gallium oxide ecosystem, accelerating the advancement of this emerging ultra-wide-bandgap semiconductor industry.

In addition, the Alliance will provide first-hand updates to its members and industry colleagues through on-site coverage, expert insights, and industry observations, allowing the community to jointly witness this important global gathering for gallium oxide research and development.