【Specialist Intro】Aleksei V. Almaev —— the Member of Technical Expert Committee

      Aleksei V. Almaev is a Russian scientist in the field of semiconductor physics, Candidate of Physical and Mathematical Sciences (PhD equivalent), specializing in the development and research of metal-oxide semiconductors and next-generation power and sensor electronic components based on them.

Education and Career

      Aleksei Almaev was born on August 4, 1991. In 2015, he graduated with a master’s degree from the Radiophysics Faculty of the National Research Tomsk State University (TSU) in the field of "Solid-State Electronics" (average diploma score: 4.9/5). In 2018, he defended his PhD dissertation in "Semiconductor Physics" at the same university.

      He began his career at TSU as an Assistant and Senior Lecturer, and since 2018, he has been an Associate Professor at the Department of Semiconductor Electronics. Concurrently, from 2019 to 2025, he headed the Laboratory of Metal-Oxide Semiconductors at the Research and Development Center "Advanced Technologies in Microelectronics" at TSU. Currently, he also holds the position of Senior Researcher at the Research and Education Center "Optical and Photonic Technologies" at TSU.

Scientific Interests and Achievements

      The main area of Aleksei Almaev’s scientific interest is the study and development of structures based on semiconducting metal oxides, in particular Ga₂O₃ and Cr₂O₃. He actively investigates their different crystalline phases (polymorphs) for the creation of high-temperature gas sensors, solar-blind UV detectors, and high-power Schottky barrier diodes.

      Aleksei Almaev has been the principal investigator of several projects supported by leading Russian scientific foundations:

      -Russian Science Foundation (RSF): Project No. 20-79-10043 "Gas sensors based on polymorphic gallium oxide structures" (2020–2025), aimed at creating miniature systems for detecting toxic and explosive gases, as well as developing λ-probes for exhaust gas analysis.

      -Russian Foundation for Basic Research (RFBR): Project "Investigation of the gas sensitivity of gallium oxide."

      -Foundation for Assistance to Small Innovative Enterprises: Projects for the development of a low-concentration hydrogen sensor and a 1 kV class power diode based on Ga₂O₃.

      According to bibliometric databases, as of 2026, A.V. Almaev’s H-index is 16 (Scopus, Web of Science) and 17 (Google Scholar). Over the past five years, he has published more than 50 papers in leading international and national journals, including Sensors and Actuators B: Chemical, IEEE Sensors Journal, Applied Physics Letters, and others.

Recognition

      Aleksei Almaev's scientific achievements have been recognized at the regional level: in 2023, he became a laureate of the Tomsk Region Prize in the field of education, science, healthcare, and culture; in 2024, he received the Prize of the Legislative Duma of Tomsk Region in the category "Natural Sciences"; and in the same year, he was awarded the distinction "Future of Tomsk Region".

Experts’ Message

      Beta-phase and other polymorphs of gallium oxide are currently considered among the most critical ultrawide-bandgap semiconductors for next-generation power electronics, UV optoelectronics, and high-temperature sensor electronics. The unique combination of fundamental properties makes gallium oxide a strategic material for energy-efficient and environmental monitoring systems.

      However, the transition of Ga₂O₃-based devices from laboratory prototypes to industrial solutions still requires solving multiple fundamental and technological problems. Our team is ready for direct collaboration with academic and industrial partners. We invite joint research, technology transfer, and shared pilot projects to unlock the full potential of gallium oxide electronics.