论文分享
-
【国际论文】2.32kV Breakdown Voltage Lateral β-Ga₂O₃ MOSFETs with Source-Connected Field Plate
[ 2023-03-02 ] -
【国际论文】1.85kV Breakdown Voltage in Lateral Field-Plated Ga₂O₃ MOSFETs
[ 2023-03-02 ] -
【国际论文】Delay-time analysis in radio-frequency β-Ga₂O₃ field effect transistors
[ 2023-03-02 ] -
【国际论文】1.6kV Vertical Ga₂O₃ FinFETs With Source-Connected Field Plates and Normally-off Operation
[ 2023-03-02 ] -
【国际论文】1.5MeV electron irradiation damage in β-Ga₂O₃ vertical rectifiers
[ 2023-03-02 ] -
【国际论文】Investigation of current collapse and recovery time due to deep level defect traps in β-Ga₂O₃ HEMT
[ 2023-03-02 ] -
【国际论文】Efficient p-type doping in ultra-wide band-gap nitrides using non-equilibrium doping method
[ 2023-03-02 ] -
【国际论文】Sub-bandgap refractive indexes and optical properties of Si-doped β-Ga₂O₃ semiconductor thin films
[ 2023-03-02 ] -
【会议论文】α-Ga₂O₃ 的实际器件应用进展
[ 2023-03-01 ] -
【会议论文】MOCVD生长的Ga₂O₃和 (AlGa)₂O₃薄膜和异质结构
[ 2023-03-01 ]
