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Asian Gallium Oxide Alliance Charter
Chapter 1 General Rules
Article 1 The name of this alliance is Asian Gallium Oxide Alliance (hereinafter referred to as the Alliance).
Article 2 The Alliance is located in Tianjin, People's Republic of China (PRC).
Article 3 The Alliance aims at promoting the development of the gallium oxide business in Asia by developing its gallium oxide technology and improving gallium oxide researchers' overall technical capability.
Article 4 The Alliance consists of the alliance council, the technical committee, the secretariat and all members who support the objectives of the alliance.
Article 5 To carry out its work effectively, the Alliance sets the following objectives:
(1) To promote gallium oxide industrialization by integrating the resources in the gallium oxide industry.
(2) To establish a professional exchange and sharing platform for information resources in the gallium oxide industry.
(3) To organize online and offline exchange activities and conferences in the gallium oxide industry.
(4) To establish a proper talent exchange and training mechanism.
(5) To lay down an industrial standard for the gallium oxide industry.
(6) To carry out other activities to achieve the purpose of the alliance.
Chapter 2 Membership
Article 6 The Alliance has the following types of membership:
(1) Chairman members (2) Council members
(3) Corporate members (4) Research institution and university members
Article 7 The chairman members are Tianjin Wonder-Sino International Trade Co., Ltd. and Novel Crystal Technology, who act as joint president, with the term of office being three years.
Article 8 Council members may make suggestions on the operation of the Alliance and the organization of academic conferences.
Article 9 Corporate members are private enterprises and university affiliated companies.
Article 10 Research institution and university members are state-run research institutions and universities.
Article 11 Members shall have priority in the matters of the Alliance.
Article 12 An application must be submitted to the secretariat to apply to be a member of the Alliance.
Article 13 A member may quit the Alliance by submitting a withdrawal application to the secretariat.
Article 14 The withdrawal is applicable to the members who fail to pay their membership dues within the prescribed time limit and the director members who fail to attend the council meeting for two consecutive times for no reason.
Article 15 Removal of membership is applicable to the members who cause damage to the reputation of the Alliance.
Chapter 3 Positions and Duties
Article 16 The Alliance sets the the following positions:
(1) Chairman: 1 from China and 1 from other countries
(2) Vice chairman: no more than 3
(3) Director (except chairman and vice chairman): no more than 20
(4) Supervisor: 2
Article 17 Composition, Duties and Rules of Procedure of the Council
(1) Composition of the Council
The council members are elected from the members on the basis of openness, fairness and impartiality. The council is composed of the representatives designated by the co-chairman unit, the vice-chairman unit and the council members. Two joint presidents and several vice chairmen and directors shall be appointed, with the term of office being three years.
(2) Duties of the Council
2.1 To maintain the stability of the Alliance, and to formulate and modify the alliance charter;
2.2 To approve and revoke the membership of the Alliance;
2.3 To elect, appoint and remove from office the joint president, vice chairman and secretary general of the secretariat of the Alliance;
2.4 To review or approve the work reports of the Technical Committee and the Secretariat;
2.5 To decide the objectives and key tasks of technological development of the Alliance according to the suggestions of the Technical Committee, and to handle such major issues as fund raising, fund use, achievement transformation and income distribution;
2.6 To formulate, review, approve and modify the internal regulations of the Alliance;
2.7 To decide on the change and termination of the alliance organizations;
2.8 To decide on the establishment and removal of the Secretariat;
2.9 To review the financial report of the Alliance;
2.10 To decide on and modify the rate for membership;
2.11 To discuss and decide on other major issues.
(3) Rules of procedure of the Council
The council makes decisions through meetings. The council meeting is held regularly every year, and an interim meeting can be convened upon the proposal of a quarter of the directors. The council meeting shall be convened and presided over by the chairman or the vice-chairman entrusted by the chairman, and the voting system of one person one vote shall be implemented. The meeting shall be effective only when attended by more than 2/3 representatives of the council members. A resolution formed at the council meeting shall be valid only with the consent of more than 2/3 of the members present at the council meeting.
Chapter 4 Technical Committee
Article 18 Establishment of Technical Committee
(1) The Technical Committee is established to ensure that the Alliance works well and makes correct technical judgment. The term of office of the committee member is three years.
(2) The members of the Technical Committee shall be elected by the council.
Article 19 Functions
(1) To judge and evaluate the internal technology of the Alliance.
(2) To provide technical guidance and discussion for new projects.
(3) To select and finalize conference papers and speeches as consultants.
(4) To collect papers and news materials in the industry.
Chapter 5 Secretariat
Article 20 Establishment of the Secretariat
(1) The secretariat is established to ensure that the Alliance works well.
(2) The secretariat is staffed with full-time officials.
(3) The provisions on the secretariat and its officials shall be decided by the chairman after the resolution of the council meeting.
(4) The officials are under the direction of the council and are appointed and removed by the council.
Article 21 The implementation of the affairs of the Alliance shall be decided by the chairman except for the rules stipulated by the Alliance.
Article 22 Functions
(1) To take charge of the comprehensive management of the Alliance.
(2) To implement the resolutions of the council.
(3) To coordinate the relationship between members.
(4) To inform members of the details of the meetings and societies of the Alliance and other related affairs.
(5) To take charge of asset management and accounting control.
Chapter 6 Assets and Accounting
Article 23 The business year of the Alliance is from January 1st to December 31st of each year.
Article 24 The assets of the Alliance include the following:
(1) The property donated at the time of establishment
(2) Membership fee
(3) Sponsorship
(4) Sponsorship of the host society
(5) Other incomes
Article 25 Assets and Accounting
(1) The assets of the Alliance shall be managed by the secretariat, and the administrative rules shall be decided by the council.
(2) Relevant accounting regulations shall be decided by the chairman after the resolution of the council meeting.
Article 26 The secretariat shall prepare the following written report after the end of the business year.
(1) The annual work report
(2) The financial statements
Chapter 7 Termination
Article 27 When the Alliance dissolves after it completes its purpose or dissolves on its own or dissolves for the reason of separation or merger, the secretariat shall propose a termination motion. The motion to terminate the Alliance must be passed by council unanimously.
Article 28 Before the termination of the Alliance, it is necessary to set up a special liquidation group under the guidance of relevant state and local authorities and institutions, which shall clean up the creditor’s rights and debts and deal with problems arising from the termination. No activities other than liquidation shall be carried out during the period of liquidation.
Download:Asian Gallium Oxide Alliance Charter

Download:Application Form for Membership of AGOA
Membership Fee Standards and Management Rules of AGOA
Emall:contact@agoa.top
【Alliance News】Promoting Collaboration Through Exchange | Alliance Visits University of Electronic Science and Technology of China to Engage with Gallium Oxide Research Team
· 【Alliance News】A New Chapter in Industry–Research Collaboration: AGOA Visits Sichuan University to Advance Full-Chain Gallium Oxide Research and Service Upgrades
04-15
· 【Alliance News】Call for Contributions | Submit and Win Gallium Oxide Wafers!AGOA Showcases Research Progress and Amplifies Academic Impact
03-25
· 【Alliance News】2025 China's Gallium Oxide Industry: Coordinated Efforts Driving Comprehensive Advancement
01-28
· 【Alliance News】The 4th Council of The First Session of AGOA Successfully Held!
01-27
· 【Alliance News】Multiple Breakthroughs Across the Global Gallium Oxide Industry in 2025
01-26
· 【Alliance News】2025 Global Gallium Oxide Research Papers and Data Unveiled
01-15
Office of the Secretariat
Person to contact: Ms. Zhang
Fixed telephone:86-22-28219577
Mobil phone:86-18526813799
E-mail: contact@agoa.top
- Alliance Conference
- Conference News
- Conference Review
- Registration
【Conference News】Synergy and Collaboration for a Shared Ecosystem | Asian Gallium Oxide Alliance Deeply Engages in FINE2026(Future Industry New Materials Expo)
· 【Conference Information】FINE 2026 Opens Next Week! Asia Gallium Oxide Alliance and Member Companies to Showcase the Full Ga₂O₃ Industry Chain
06-05
· 【Conference Information】The 6th International Workshop on Gallium Oxide and Related Materials
05-28
· 【Conference Information】Conference information on Gallium Oxide in 2026 Part 2
05-22
· 【Conference News】JFS Forum Concludes Successfully: Witnessing the New Compound Semiconductor Track Empowered by Gallium Oxide
04-28
· 【Conference Information】2026 Jiufengshan Forum
04-28
· 【Conference News】Alliance Insights | At the 2026 Semiconductor New Materials Development (Deyang) Conference: Tracking the Development Trends of Gallium Oxide
04-22
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Synergy and Collaboration for a Shared Ecosystem | AGOA Deeply Engages in FINE2026 Future Industry New Materials Expo(2026.6.10-12)
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JFS Forum Concludes Successfully: Witnessing the New Compound Semiconductor Track Empowered by Gallium Oxide(2026.4.23-25)
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At the 2026 Semiconductor New Materials Development (Deyang) Conference: Tracking the Development Trends of Gallium Oxide(2026.4.15-17)
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2025 APCSCRM Council Member Unit Interviews
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2025 APCSCRM Member Unit Interviews
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Witnessing the Present and Future of Gallium Oxide — APCSCRM 2025
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The third Power Device Manufacturing, Testing, and Applications Forum (IPF 2025):Gallium Oxide in the Spotlight(2025.8.21-22)
The first Seminar on Gallium Oxide Technology and Industry in 2024
Wide bandgap semiconductors have become one of the strategic commanding elevations of international scientific and technological competition. Gallium Oxide, as a new ultra-wide bandgap semiconductor material, has shown excellent performance far beyond the theoretical limit of traditional semiconductor materials in the fields of power devices, radio frequency devices and photodetectors, and has played a key role in promoting the development of related devices to higher efficiency, smaller volume and higher temperature resistance, which has attracted extensive attention from academia and industry. With the rapid development of new energy vehicles, 5G/6G communication, smart grid and other emerging technology fields, the market demand for Gallium Oxide materials and devices is growing, and its industrialization process will also accelerate.
To promote the academic and technical exchange and cooperation and industrial development of Gallium Oxide nationwide, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou Institute of Optics and Fine Mechanics, Xidian University, Hangzhou Fujia Gallium Technology Co., Ltd., Hangzhou Garen Semiconductor Co., Ltd., Semiconductor Online and Asian Gallium Oxide Alliance will jointly organize the First Gallium Oxide Technology and Industry Seminar in 2024 on July 17-18, 2024 in Hangzhou, Zhejiang Province. We sincerely invite professionals from universities, scientific research institutions, enterprises and government departments to participate in this seminar, actively carry out extensive exchanges and discussions, and jointly promote the technological breakthrough and industrialization process of Gallium Oxide materials and related devices.
01 Sponsors and Undertakers
Sponsors
ZJU-Hangzhou Global Scientific and Technological Innovation Center
(State Key Laboratory of Silicon and Advanced Semiconductor Materials)
Hangzhou Institute of Optics and Fine Mechanics
(Zhejiang Engineering Research Center for Advanced Optoelectronic Functional Materials)
Xidian University
(National Key Laboratory of Wide Bandgap Semiconductor Devices and Integration Technology)
Undertakers
Hangzhou Fujia Gallium Technology Co., Ltd
Hangzhou Garen Semiconductor Co., Ltd
Semiconductor Online
Asian Gallium Oxide Alliance
02 Organizational Structure
Honorary Chairman of the Seminar
Hao Yue, Academician of Chinese Academy of Sciences, Xidian University
Yang Deren, Academician of Chinese Academy of Sciences, Zhejiang University
Jiang Fengyi, Academician of Chinese Academy of Sciences, Nanchang University
Zhang Rong, Academician of Chinese Academy of Sciences, Xiamen University
Chairman of the Seminar
Zhang Long, President, Hangzhou Institute of Optics and Fine Mechanics
Zhang Jincheng, Professor, Xidian University
Chairman of the Organizing Committee
Qi Hongji, Director, Hangzhou Institute of Optics and Fine Mechanics
Hui Zhang, Professor, Zhejiang University
Feng Qian, Professor, Xidian University
03 Conference Topics
Growth and processing of Gallium Oxide crystals
Gallium Oxide film and its epitaxy technology
Gallium Oxide power and optoelectronic devices
Gallium Oxide related equipment
Gallium Oxide industry and policy
04 Time and address
Time: July 17-18 (sign in on 16th)
Address: Blossom Water Museum Hotel Hangzhou (118 Shuibo Road, Xiaoshan District, Hangzhou)
For participation, exhibition, publicity and sponsorship, please contact the Secretariat of the Asian Gallium Oxide Alliance
Contact: Ms. Zhang
E-mail: contact@agoa.top
- Industry Information
- News Trends
- Paper
- Expert Interview
- Discover
【Domestic News】Shanghai Lingang's Fourth-Generation Semiconductor Strategy: Ga₂O₃ Industry Enters a New Era of Ecosystem Collaboration
· 【Domestic News】Great news! The Fourth-Generation Gallium Oxide Semiconductor Project Successfully Selected as Candidate for Funding under Nantong's "510 Talent Plan."
07-03
· 【Domestic News】Coordinated Strategic Deployment, the Future Has Already Arrived: The Strategic Rise of Compound Semiconductors Reflected in Jiangsu’s “15th Five-Year Plan” for New Materials
06-25
· 【World Express】Breakthrough in High-Temperature Methane Sensors: Russian Scientists Develop Advanced Multilayer Gas Detection Technology
06-25
· 【Domestic News】Pateo Partners with FYUST on Silicon Photonics and Gallium Oxide
06-23
· 【Domestic News】“Tao (τ) Law”: Huawei Proposes a New Global Principle for the Semiconductor Industry
05-27
· 【World Express】FLOSFIA Secures Project Support to Advance Development of α-Ga₂O₃ 1200V MOSFET Devices
05-14
· 【Member Papers】Doping and Defect Co-Engineering Strategy to Overcome Gain-Speed Dilemma of Ga₂O₃ Thin Film Grown by Mist-CVD Technique
07-08
· 【International Papers】Effects of electrode geometry and sub-bandgap excitation in β-Ga₂O₃ photoconductive semiconductor switches
07-08
· 【Others Papers】GaN/Sn:Ga₂O₃@MgO/Graphene Core–Shell Nanowires for Self-Powered Deep-UV Photodetector
07-08
· 【Others Papers】Band Offsets at β/γ-Ga₂O₃ Interface: A Comprehensive Ab Initio and Experimental Investigation
07-08
· 【Member Papers】High-Performance and Reliability-Enhanced β-Ga₂O₃ Trench Schottky Barrier Diodes with Ion Implantation Shielding Layer
07-07
· 【International Papers】Sub-resolution detectability of nanoscale surface defects in β-Ga₂O₃ enabled by phase-contrast microscopy
07-07
· 【Device Papers】Suppressing punch-through and boosting breakdown voltage in p-GaN gate HEMTs by employing a β-Ga₂O₃ back-barrier
07-07
【Expert Interview】Hardcore Technology + Strategic Layout: Chairman Qi Hongji Explains How Fujia Gallium Leads the Gallium Oxide Sector
· 【Expert Interview】From Technology to Industry: Prof. Tang Weihua Elaborates on GAO SEMI’s Systematic Layout and Future Plans for Gallium Oxide
12-05
· 【Expert Interview】Professor Huang Wenhai from the Hong Kong University of Science and Technology Discusses the Breakthroughs and Prospects of Gallium Oxide Devices
06-05
· 【Expert Interview】Grasp the Opportunity of the Times, Fujia Gallium Promotes the Achievements Transformation Process in the Domestic Gallium Oxide Field
02-17
· 【Expert Interview】Zhang Hui, Chairman of Hangzhou GAREN SEMI Co., LTD., a Gallium Oxide Technology Enterprise/Professor of Zhejiang University: In the Future, the Large-Cale Application of Gallium Oxide may be Realized First in the Field of Power Devices
01-21
· 【Expert Interview】Prof. Tashun Chou of IKZ: Supporting Gallium Oxide Industrialization by High-Quality Epitaxial Growth
09-27
· 【Expert Interview】Prof Feng Qian:Focus on lmproving Material Uniformity to Support the Practical Application of Gallium Oxide
08-16
【Knowledge Discover】The Passivation Layer in Power Devices | One Dielectric Layer, Four Roles
· 【Knowledge Discover】The Invisible Hidden Risks”: How Defects in Gallium Oxide Substrates Affect Device Performance
07-02
· 【Knowledge Discover】Why is Layer‑by‑layer Growth Essential in Thin‑film Deposition for Semiconductor Chip Fabrication?
07-01
· 【Knowledge Discover】Does More Defects Always Mean Better Material Performance?
06-30
· 【Knowledge Discover】Ga₂O₃ Panorama | EFG: A Pioneer Pathway for Gallium Oxide Substrate Commercialization
06-24
· 【Knowledge Discover】Why Can Gallium Oxide Enable Large-Area Substrates? A Look into Melt Growth Technology
06-14
· 【Knowledge Discover】Panoramic Review of Gallium Oxide (Issue 4) | How Far Is Gallium Oxide from “Super Power Devices”?
06-05
- Member Dynamic
- News
- Member List
- Member Intro
- Specialist Intro
【Member News】Academician Hao Yue, a Leading IC Scholar, Analyzes Semiconductor Breakthroughs and Talent Cultivation
· 【Member News】Setting a New Benchmark: The Second Gallium Oxide National Standard Led by Fujia Gallium Passes Project Approval Publicity
07-07
· 【Member News】New Product Launch | Garen Semiconductor Unveils High-Performance Ga₂O₃ Epitaxial Wafers for Advanced Device Development
07-06
· 【Member News】Fujia Gallium at CSPSD 2026: 12-inch VB-Grown Ga₂O₃ Single Crystal Receives Outstanding Technical Innovation Product Award, Highlighting Broad Innovation Across the Value Chain
07-02
· 【Member News】CSPSD 2026: Researcher Qi Hongji Delivers Keynote on Gallium Oxide Industrialization and Joins Roundtable Discussion
06-30
· 【Member News】Good News | Garen Semiconductor’s Dedicated VB Gallium Oxide Crystal Growth System Wins Outstanding Market Performance Award at CSPSD 2026
06-29
· 【Member News】Good News! Garen Builds the World’s First 6-inch/8-inch Ga₂O₃ Homoepitaxial Mass Production Line Following a China-Characteristic Industrial Path, and Begins Mass Shipment to Leading Chip Customers
06-24
· Technical Expert Committee List(Updated in May. 2026)
03-07
· Member List(Updated in June. 2026)
03-27
【Member Intro】Shandong SINOGa Valley Semiconductor Co.,Ltd—— Regular Member
· 【Member Intro】Bridging Industry and Academia: The Nano-Fabrication Platform at Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, as a Most Practical R&D Partner for Customers
07-01
· 【Member Intro】NextGO Epi —— Regular Member
06-23
· 【Member Intro】Beijing Orient Semi —— Regular Member
06-08
· 【Member Intro】FreeSpirit Instruments —— Regular Member
04-13
· 【Member Intro】Inside Third- and Fourth-Generation Semiconductor Crystal Growth and Advanced Equipment Company: Shandong Jingsheng Electronics Technology Co., Ltd.
04-03
· 【Member Intro】Introduction to Prof. Yunbin He’s Ultra-Wide Bandgap Semiconductor and Optoelectronic Devices Team at the School of Microelectronics, Wuhan Textile University
03-20
【Specialist Intro】Aleksei V. Almaev —— the Member of Technical Expert Committee
· 【Specialist Intro】Hu Jichao —— the Member of Technical Expert Committee
04-09
· 【Specialist Intro】Xu Xiaodong —— the Member of Technical Expert Committee
04-02
· 【Specialist Intro】Andriy Revenko —— the Member of Technical Expert Committee
03-11
· 【Specialist Intro】Yang Weifeng —— the Member of Technical Expert Committee
11-07
· 【Specialist Intro】Zhang Xiaodong —— the Member of Technical Expert Committee
10-28
· 【Specialist Intro】Sai Qinglin —— the Member of Technical Expert Committee
05-28
- Patents&Standards&Talent Pool
- Patents
- Standards News
- Talent Pool
【Patenes】Targeting Ga₂O₃ Thin-Film Transfer Challenges, Fujian Sunwise Semiconductor Proposes a Novel Wet-Etch Lift-Off Solution for ε-Ga₂O₃
· 【Patenes】TySiC (SICC) Applies for Gallium Oxide Crystal Growth Patent: Multi-Crucible Growth in a Single Furnace Aims to Increase Throughput and Reduce Defects
06-14
· 【Patents】Domestic Companies Accelerate Positioning in Gallium Oxide: Shandong State-Owned Capital Investment and Tianyue Advanced Disclose Major Patents
05-18
· 【Patents】Global Gallium Oxide Patent Landscape: From Japan’s Early Leadership to a China–Japan Duopoly
03-20
【Standard News】Coordinated Acceleration of Gallium Oxide Standards: Multiple Alliance Members Participate in the 2026 H1 China Semiconductor Materials Industry Group Standards Working Conference
· 【Standard News】Led 1 Standard, Participated in 2 | Garen Semiconductor Further Advances Gallium Oxide Group Standard Development
06-22
· 【Standards Focus】When Do GB/T Recommended Standards Become Mandatory Requirements?
05-27
· 【Standards Focus】How Many Types of Standards Are There? A Clear Guide to 13 Common Categories of Standards
05-11
· 【Standard News】National Semiconductor Material Standards Meeting Successfully Held; Gallium Oxide National Standard Roadmap Continues to Advance
05-11
· 【Standards Focus】The Standardization Administration of China Issues a Circular Regulating the Attribution of Drafting Organizations and Drafters for Recommended National Standards
12-24
· 【Standard News】Setting the Standard for the Future! Two Gallium Oxide Group Standards Led by Garen Semiconductor Officially Released
12-23
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