News Trends
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【Domestic News】Hangzhou Spectrum Semiconductor Completes Multi‑Hundred‑Million‑Yuan Series C Financing, Expanding Fourth‑Generation Semiconductor Gallium Oxide and Extreme‑Environment Power Technologies
[ 2026-10-28 ] -
【World Express】FLOSFIA Successfully Achieves Epitaxial Growth of Gallium Oxide on 6-Inch Sapphire Substrates, with Approximately ±3% Thickness Uniformity
[ 2026-10-22 ] -
【World Express】NASA Supports the Development of High-Voltage Gallium Oxide Power Devices: From High Breakdown Voltage to Reliability Validation in Space Environments
[ 2026-10-15 ] -
【Domestic News】Milestone Breakthrough! China Achieves Ampere-Level Current Conduction in Gallium Oxide Power Devices
[ 2026-10-13 ] -
【Domestic News】Hangzhou Spectrum Semiconductor Completes Multi‑Hundred‑Million‑Yuan Series C Financing, Expanding Fourth‑Generation Semiconductor Gallium Oxide and Extreme‑Environment Power Technologies
[ 2026-09-28 ] -
【World Express】Overseas Technology Project Matching｜Ga₂O₃ Vertical Trench MOSFET Technology Seeking Industry Collaboration
[ 2026-09-24 ] -
【World Express】U.S. Advances Ga₂O₃ Development, Targeting Extreme Applications in High-Temperature and Corrosive Environments
[ 2026-09-23 ] -
【Domestic News】Ga₂O₃ Named in Key Policy Document: China’s “15th Five-Year Plan” for Electronic Information Manufacturing Signals Multi-Level Support for the Industry
[ 2026-09-17 ] -
【Domestic News】Shanghai Moves Early on Fourth-Generation Semiconductors, Bringing “First Users” Onboard and Proactively “Drawing the Wind In”
[ 2026-09-16 ] -
【Domestic News】Fuzhou University’s Ga₂O₃ Team Earns Further National Recognition, with Major Progress in Commercialization
[ 2026-09-15 ]
