Paper Sharing
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【Member Papers】Southern University of Science---Enhancement-mode β-Ga₂O₃ MOSFETs and monolithic integrated inverters based on charge trapping layer technology
[ 2025-06-20 ] -
【Member Papers】Xi’an Jiaotong University --- The γ-Ray TID Effect and Irradiation Damage Recovery on β-Ga₂O₃/Al₂O₃ MOSCAPs
[ 2025-06-20 ] -
【Domestic Papers】Sun Yat-Sen University --- High performance solar-blind photodetectors based on MOCVD grown β-Ga₂O₃ with hydrogen plasma treatment
[ 2025-06-20 ] -
【Domestic Papers】Theoretical Analysis of Vertical β-Ga₂O₃ Schottky Barrier Diodes With p-NiO Field Limiting Rings for High P-FOM Performance
[ 2025-06-20 ] -
【Member Papers】1844 V β-Ga₂O₃ Trench-MOS Schottky Barrier Diodes with Improved Electric Field of 5.2 MV/cm
[ 2025-06-20 ] -
【Member Papers】Xidian University --- Enhanced Photoelectric Performance of β-Ga₂O₃ Phototransistors via NH₃ Plasma Pretreatment for Ultra-Sensitive Solar-Blind UV Detection
[ 2025-06-18 ] -
【Domestic Papers】Harbin Institute of Technology (Shenzhen) --- A Review of ε-Ga₂O₃ Films: Fabrications and Photoelectric Properties
[ 2025-06-18 ] -
【International Papers】Thermal transport in ion-beam-exfoliated β-Ga₂O₃ nanomembranes
[ 2025-06-18 ] -
【Device Papers】1200-V/10-A Low Thermal Resistance Ga₂O₃ Schottky Barrier Diode With Composite Terminal Structure and Substrate Thinning
[ 2025-06-18 ] -
【Device Papers】Defect-modulation in α-Ga₂O₃ molecular beam epitaxial photodetector investigated through pulsed-light persistent-photoconductivity
[ 2025-06-18 ]
