Paper Sharing
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【Member Papers】Preparation and Properties of Wafer-Level Nanoporous GaN-Based N-Doped β-Ga₂O₃ Solar-Blind Photodetectors
[ 2026-03-20 ] -
【International Papers】Double drift layers to minimize on-resistance in 2.7-kV β-Ga₂O₃ (001) vertical trench Schottky barrier diodes
[ 2026-03-20 ] -
【Epitaxy Papers】Limitations on activation of high dose Ge implants in β-Ga₂O₃
[ 2026-03-20 ] -
【Epitaxy Papers】Investigation of Enhanced Heteroepitaxy and Electrical Properties in κ-Ga₂O₃ Due to Interfacing with β-Ga₂O₃ Template Layers
[ 2026-03-20 ] -
【Member Papers】Epitaxial Growth of p-Type β-Ga₂O₃ Thin Films and Demonstration of a p–n Diode
[ 2026-03-19 ] -
【Member Papers】Boosting the responsivity of β-Ga₂O₃ metal–semiconductor–metal solar-blind photodetectors through oxygen-related defect states
[ 2026-03-19 ] -
【Device Papers】Temperature Optimized β-Ga₂O₃ Solar-Blind Ultraviolet Photodetectors Fabricated by PLD for Communication and Imaging Application
[ 2026-03-19 ] -
【Device Papers】Challenges and opportunities in Ga₂O₃ solar-blind photodetectors: From material engineering to device realization
[ 2026-03-19 ] -
【Member Papers】Theoretical study of polarity-driven interfacial engineering for high-performance β-Ga₂O₃ optoelectronic devices
[ 2026-03-18 ] -
【Domestic Papers】Research on nitrogen annealing of V-doped β-Ga₂O₃ single crystals grown by EFG
[ 2026-03-18 ]
