Paper Sharing
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【Domestic Paperes】"Complementary Material Integration": Co‑Optimizing Low Noise and High Signal in X‑Ray Detectors for High Detectivity via β-Ga₂O₃/3D/2D Metal Halide Perovskite Heterojunction
[ 2026-09-24 ] -
【International Papers】MOCVD Growth of (011) β-Ga₂O₃ Films: Defect Control and Device Implication
[ 2026-09-24 ] -
【Member Papers】Wafer-scale heteroepitaxy of Sn-alloyed ε-Ga₂O₃ on sapphire via low-pressure mist-CVD
[ 2026-09-23 ] -
【Epitaxy Papers】ALD grown (001) κ-Ga₂O₃ epitaxial thin films on c-plane sapphire: Influence of thickness and thermal annealing
[ 2026-09-23 ] -
【Epitaxy Papers】Pulsed-Liquid-Injection MOCVD of Epitaxial β-Ga₂O₃ Thin Films as a Promising Alternative Chemical Route
[ 2026-09-23 ] -
【Member Papers】APL | Zheng Shi’s Team at Nanjing University of Posts and Telecommunications: Self-Powered Reconfigurable UV Logic Enabled by Photocurrent Polarity Reversal in a Ga₂O₃/GaN Heterojunction, with Six Logic Functions Realized in a Single Device
[ 2026-09-22 ] -
【Member Papers】Atomic-Scale Strain Relaxation via Ar-Bombarded Surface Modification for Enabling Single-Crystalline β-Ga₂O₃ (010) Heteroepitaxy
[ 2026-09-22 ] -
【International Papers】Impact of Si ion implantation on α-Ga₂O₃ and β-Ga₂O₃ lateral MESFET transistors
[ 2026-09-22 ] -
【Domestic Papers】Tuning photo-induced hole transport dynamics in Ga₂O₃ photoelectrodes for ultra-stable underwater solar-blind UV detection and communication
[ 2026-09-21 ] -
【Member Papers】MOCVD growth of (AlₓGa₁₋ₓ)₂O₃（x=0‑0.77）alloyed films for deep UV photodetection applications
[ 2026-09-21 ]
