Paper Sharing
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【Member Papers】C-Band β-Ga₂O₃-on-SiC RF Power MOSFETs With High Output Power Density and Low Microwave Noise Figure
[ 2025-08-04 ] -
【Domestic Papers】Solar-blind UV light-modulated β-Ga₂O₃ full-wave bridge rectifier
[ 2025-08-04 ] -
【International Papers】Effect of substrate pretreatment on the epitaxial growth of κ-Ga₂O₃ layers on sapphire by halide vapor phase epitaxy
[ 2025-08-04 ] -
【Device Papers】Structural and Electronic Properties of β-(AlₓGa₁₋ₓ)₂O₃ Active Layers for Space-Qualified Solar-Blind Photodetectors
[ 2025-08-04 ] -
【Device Papers】Low leakage current β-Ga₂O₃ MOS capacitors with ALD deposited Al₂O₃ gate dielectric using Ozone as precursor
[ 2025-08-04 ] -
【Device Papers】Monolithic Integrated, Reconfigurable Gallium Oxide NAND/NOR Gates with Ferroelectric AlScN Gate Stack
[ 2025-08-04 ] -
【Device Papers】Unveiling GaN/α-Ga₂O₃ interface contact barrier modulation via post-deposition annealing: DFT insights
[ 2025-08-04 ] -
【Member Papers】Radiation Effects of 500 MeV Kr⁺ ions on NiO/β-Ga₂O₃ heterojunction diodes
[ 2025-08-01 ] -
【International Papers】Polarization-dependent resonant inelastic x-ray scattering of β-Ga₂O₃: An experimental and computational study
[ 2025-08-01 ] -
【Device Papers】High performance vacuum annealed β-(AlₓGa₁₋ₓ)₂O₃/Ga₂O₃ HFET with fᴛ/fᴍᴀx of 32/65 GHz
[ 2025-08-01 ]
