The University at Buffalo, State University of New York (SUNY) and The Ohio State University have jointly developed a Ga₂O₃-based vertical trench MOSFET technology for high-voltage power electronics applications, including power grids, rail transit, and electric vehicles.

To address the key challenge of shallow acceptor doping in the development of vertical Ga₂O₃ power devices, the technology incorporates an in-situ Mg-doped current blocking layer (CBL) into the vertical trench MOSFET structure. Through device-structure engineering, the approach enables effective current control and provides an alternative technology pathway for the development of high-voltage Ga₂O₃ power devices.

The technology has currently reached TRL 6, with a system prototype completed and the technology entering a further stage of validation in a relevant real-world environment.

Core Technology

Vertical Trench MOSFET Structure

Adopts a vertical device structure designed to meet the requirements of high-voltage power device applications.

In-Situ Mg-Doped Current Blocking Layer

An in-situ Mg-doped current blocking layer (CBL) is incorporated into the device to address the lack of a mature shallow-acceptor doping system in Ga₂O₃ and enable current-control through device-structure engineering.

High-Voltage Power Applications

The technology targets high-voltage, high-power power electronic systems, with potential for further application in areas such as power grids, rail transit, and new-energy vehicles.

Potential Applications

Power Grids:High-voltage direct current (HVDC) converters and related systems

Rail Transit:Traction power electronics for electric locomotives

New-Energy Vehicles:Fast-charging equipment for electric vehicles

High-Voltage Equipment:High-voltage instruments and related power electronic systems

Intellectual Property and R&D Foundation

The project has filed a U.S. patent application:U.S. Patent Application No. 63/717,887

Related research has been published as:

“E-Mode Vertical β-Ga₂O₃ (010) U-Trench MOSFETs With In-Situ Mg-Doped Current Blocking Layers”

IEEE Electron Device Letters, 2025, 46(5), 725–728.

Collaboration Needs

The project team is currently seeking further engagement with companies and research institutions with relevant industrial capabilities or R&D expertise. Available collaboration models include:

Technology Transfer｜Technology Licensing｜Joint R&D

Companies and research institutions working in Ga₂O₃ materials, epitaxy, power devices, power electronics, and related application fields are welcome to explore opportunities for collaboration on this project.