【Domestic News】Great news! The Fourth-Generation Gallium Oxide Semiconductor Project Successfully Selected as Candidate for Funding under Nantong's "510 Talent Plan."
日期:2026-07-03阅读:71
Recently, the Talent Work Leading Group Office of the CPC Nantong Tongzhou District Committee released the Public Notice of the Proposed Funded Projects for the Second Batch of the 2026 Nantong “Jianghai Talent” Tongzhou Program and the “510 Talent Plan.” Following project solicitation, eligibility review, comprehensive evaluation, and funding deliberation, a total of 22 projects were selected for proposed funding.

Among them, the “Fourth-Generation Ga₂O₃ Semiconductor Thin Films and Devices” project was successfully included in the funding list, making it one of the key supported projects in the fields of advanced materials and semiconductors. Its selection reflects the local government's continued commitment to advancing fourth-generation wide-bandgap semiconductor technologies.
The list of proposed projects spans a broad range of strategic emerging industries, including artificial intelligence, high-end equipment, advanced materials, advanced manufacturing, green and low-carbon technologies, marine engineering, and biomedicine. Notably, multiple projects focus on advanced packaging, specialized materials for high-end electronics manufacturing, AI-enabled materials development, and fourth-generation Ga₂O₃ semiconductors, highlighting Tongzhou District's ongoing efforts to strengthen innovation resources and accelerate the development of competitive industrial clusters centered on next-generation information technologies and advanced materials.
As one of the most promising fourth-generation ultra-wide-bandgap semiconductor materials, gallium oxide (Ga₂O₃) has attracted increasing global attention in recent years due to its ultra-wide bandgap, high critical breakdown electric field, outstanding potential for high-power electronic devices, and unique advantages in deep-ultraviolet optoelectronic applications. With continuous progress in crystal growth, epitaxial technology, device development, and industrial ecosystem construction, Ga₂O₃ is steadily transitioning from laboratory research toward large-scale commercialization, demonstrating broad application prospects in power electronics, smart grids, new energy vehicles, rail transportation, and deep-ultraviolet photodetection.
The inclusion of a Ga₂O₃-related project in this regional talent funding program not only underscores the local government's strong support for cutting-edge semiconductor innovation, but is also expected to further promote key technology development, technology transfer, and ecosystem building for Ga₂O₃, injecting new momentum into the growth of China's fourth-generation semiconductor industry.

