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【Member News】CSPSD 2026: Researcher Qi Hongji Delivers Keynote on Gallium Oxide Industrialization and Joins Roundtable Discussion
日期：2026-06-30阅读：192
Qi Hongji, Researcher at the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Director of the Hangzhou Institute of Optics and Precision Machinery, and Founder & Chairman of Fujia Gallium Industry, was invited to deliver a keynote speech titled “12-inch Gallium Oxide Single-Crystal Technology and Its Industrialization for Power Devices” and to participate in the conference roundtable discussion.
From June 25 to 27, 2026, the 2026 Conference on Power Semiconductor Devices and Integrated Circuits (CSPSD 2026) was successfully held at the Hyatt Regency Shanghai Grand Edge. Guided by the China Advanced Semiconductor Industry Innovation Alliance (CASA), the event was co-hosted by the Shanghai Institute of Microsystem and Information Technology (SIMIT) of the Chinese Academy of Sciences (CAS), Casa-Flip (an advanced semiconductor industry network), and the Third-Generation Semiconductor Industry. As one of the most influential academic and industrial exchange platforms in China's power semiconductor sector, this year's conference gathered numerous experts and scholars from universities, research institutes, and enterprises. The attendees engaged in in-depth discussions on core topics including silicon-based semiconductors, wide/ultra-wide bandgap semiconductor materials, power devices, and integrated circuits.
During the conference, Prof. Hongji Qi—Research Fellow at the Shanghai Institute of Optics and Fine Mechanics (SIOM), CAS, Director of the Hangzhou Institute of Optics and Fine Mechanics (HIOM), and Founder and Chairman of Fujia Gallium—was invited to deliver a keynote presentation titled "12-Inch Gallium Oxide Single Crystal Technology and Commercialization for Power Devices". He shared profound insights into his team's latest breakthroughs in large-scale gallium oxide single crystal growth and industrialization, which drew enthusiastic responses from the audience.
The presentation highlighted that Gallium Oxide (Ga₂O₃), with its ultra-wide bandgap (4.9 eV) and high breakdown electric field (approx. 8 MV/cm), exhibits immense potential in high-voltage and high-power applications such as data centers, new energy vehicles, rail transit, and power grid transmission and distribution, making it a critical representative of fourth-generation semiconductor materials. In March 2026, Fujia Gallium took the global lead in growing the world's first 12-inch gallium oxide single crystal ingots, breaking the world record for Ga₂O₃ single crystal dimensions and making it the only enterprise worldwide to master this technology to date. Furthermore, the presentation emphasized the vital role artificial intelligence (AI) plays in the development of Ga₂O₃ single crystal and epitaxial materials. Leveraging years of technical expertise, the team has successfully developed 6- and 8-inch Ga₂O₃ MOCVD epitaxy technologies. The fabricated single-crystal substrates and epitaxial films have been supplied to leading domestic and international epitaxy or device institutions. This has notably assisted the Jiufengshan Laboratory in developing a Ga₂O₃ lateral MOSFET with a breakdown voltage exceeding 9000 V, setting a new world record for Ga₂O₃ voltage endurance. Additionally, the team deeply collaborated on a phonon-assisted absorption photoconductive switch project (led by Sun Yat-sen University), which achieved a remarkable voltage conversion efficiency of 98.93%. These breakthroughs in large-scale Ga₂O₃ single crystal substrates and epitaxial thin-film fabrication technologies have laid a solid foundation for the large-scale market adoption of gallium oxide power devices.
In addition to the keynote presentation, Prof. Hongji Qi was invited to participate in the conference's roundtable panel. Moderated by Lubing Zhao, Deputy Secretary-General of the China Advanced Semiconductor Industry Innovation Alliance (CASA), the panel brought together distinguished experts and scholars from both academia and industry. Co-panelists included Wenkang Huang (General Manager of Tsingtao United Microelectronics), Haotao Ke (CTO of PN Junction Semiconductor), Xugang Ke (Professor at Zhejiang University and General Manager of Primarius Semiconductor), Shaoyu Liu (General Manager of Xinchuangde Semiconductor), and Yuhao Zhang (Professor at the University of Hong Kong). The panelists engaged in an in-depth dialogue centered around core topics such as the industrialization pathways, technical bottlenecks, and market opportunities for fourth-generation semiconductor materials.
During the panel, Prof. Qi structured his insights around the core logic of China's energy policies and power semiconductor development, establishing it as the "One Baseline". From this foundation, he detailed the "Two Major Advantages" of gallium oxide materials—namely their high performance and low cost potential—followed by the "Three Dimensions of Compatibility" spanning material processing, device compatibility, and the industrial ecosystem. Concluding his remarks, he outlined "Four Industrial Expectations" for the gallium oxide supply chain: performance enhancement, cost reduction, rapid growth of device companies, and the comprehensive commercial implementation of the gallium oxide industrial chain. His perspectives resonated strongly with the panelists and attendees, effectively building a broader industry consensus to further accelerate the integration of the gallium oxide supply chain.
Moving forward, Fujia Gallium will continue to deepen its collaborations across industry, academia, and research institutions to accelerate the scale-production of 6- and 8-inch gallium oxide single crystals and epitaxial wafers. Upholding its corporate mission—"enabling the world with better materials"—Fujia Gallium is dedicated to working hand-in-hand with partners across the supply chain to jointly drive fourth-generation gallium oxide semiconductor materials from the laboratory into thousands of industries.
Product Portfolio
Gallium Oxide Crystal Growth Equipment
Fujia Gallium has developed the world’s first EFG crystal growth system featuring a proprietary “one-click crystal growth” function, supporting 2-inch to 8-inch crystal production. The system is protected by 6 granted domestic patents and 4 international patents. Complete equipment solutions and process packages are available. The company has also independently developed fully automated VB (Vertical Bridgman) crystal growth equipment and was the first in China to overcome the technical bottleneck of 12-inch Ga₂O₃ single-crystal growth using the VB method, enabling the production of large-diameter bulk crystals.
Gallium Oxide Single-Crystal Substrates
As one of China’s earliest pioneers in Gallium Oxide single-crystal research and an industry-leading supplier, Fujia Gallium provides high-quality single-crystal substrates to global customers. The product portfolio includes 26 standard Ga₂O₃ substrate specifications covering diameters from 2 to 8 inches. Customized solutions are available in terms of wafer size, electrical properties, and crystal orientation, supporting both advanced epitaxy R&D and volume production requirements.
Gallium Oxide Epitaxial Wafers
Built upon mature MOCVD (Metal-Organic Chemical Vapor Deposition) and MBE (Molecular Beam Epitaxy) platforms, Fujia Gallium offers 15 standard epitaxial wafer products from 2-inch to 6-inch formats, as well as customized MBE-based epitaxial structures. The company provides integrated “substrate + epitaxy” solutions. A precise process control system enables customization of key parameters including epitaxial layer thickness, doping concentration, and compositional uniformity, meeting diverse requirements across different power levels and device architectures.
About Hangzhou Fujia Gallium
Hangzhou Fujia Gallium Technology Co., Ltd., established on December 31, 2019, is committed to its mission of “Bringing Better Materials to the World” and focuses on the industrialization of ultra-wide bandgap Gallium Oxide semiconductor materials. Its core products include Gallium Oxide single-crystal substrates, MOCVD/MBE epitaxial wafers, and crystal growth equipment based on the Vertical Bridgman (VB) and Edge-Defined Film-Fed Growth (EFG) methods. The company provides systematic solutions for material development, accelerating the integration of the entire ultra-wide bandgap Gallium Oxide industry chain and promoting the application of Gallium Oxide materials in power devices, microwave RF devices, and optoelectronic detection. A series of major achievements in Gallium Oxide development have been featured by leading media outlets including CCTV, People’s Daily, Xinhua News Agency, China Securities Journal, and The Paper. In terms of corporate recognition, the company was designated as a Zhejiang Province Science and Technology SME in 2022, recognized as a National High-Tech Enterprise in 2023, and awarded the titles of Hangzhou High-Tech Enterprise R&D Center and Zhejiang “Specialized and Sophisticated” SME in 2024. In 2025, it obtained ISO 9001 Quality Management System certification (Certificate No. 20225Q20294R0M) and was also named a 2024 Hangzhou “Rising Eagle” Enterprise. In the Gallium Oxide field, the company is leading the drafting of the first national standard in this area and has undertaken one project from the National Development and Reform Commission and one from the Ministry of Industry and Information Technology, while participating in three additional national and provincial-level projects supported by the National Natural Science Foundation of China and regional authorities in Zhejiang and Shanghai. To date, the company has been granted 14 international patents (6 in the United States, 7 in Japan, and 1 in Europe), 42 domestic patents, three registered “Fujia Gallium” trademarks, and five software copyrights, including its proprietary “One-Click Crystal Growth” control software.
