【Member News】Good News | Garen Semiconductor’s Dedicated VB Gallium Oxide Crystal Growth System Wins Outstanding Market Performance Award at CSPSD 2026
日期:2026-06-29阅读:106
On June 25, 2026, the 2026 China Symposium on Power Semiconductor Devices and Integrated Circuits (CSPSD 2026) officially opened in Lingang, Shanghai. As one of the most prestigious annual conferences in China’s power semiconductor field, this year’s meeting focused on in-depth discussions covering wide-bandgap and ultrawide-bandgap semiconductor materials, power devices, and advanced packaging technologies, bringing together leading enterprises and research institutions across the entire industrial chain.
During the conference, the organizing committee hosted an Outstanding Power Semiconductor Products Award to recognize companies and products with significant market impact in the power semiconductor sector. Hangzhou Garen Semiconductor Co., Ltd. (hereinafter referred to as “Garen Semiconductor”) was honored with the Outstanding Market Performance Award for its independently developed “VB Method Crystal Growth System for Gallium Oxide.”
The equipment, fully developed in-house by Garen Semiconductor, is specifically designed for the large-scale growth of gallium oxide single crystals. Based on the Vertical Bridgman (VB) growth technique, the system significantly improves crystal quality and growth efficiency, providing critical equipment support for the industrial-scale production of gallium oxide materials and further advancing the localization of key semiconductor manufacturing equipment.

Figure 1: Award ceremony at the conference

Figure 2: Award plaque received by Garen Semiconductor
The other recipients of the Outstanding Market Performance Award include Innoscience, SICC Co., Ltd., Naura Technology Group, PureGaN Semiconductor, GL Multiversity, and Suoxiang Technology, covering key segments of the power semiconductor value chain, including materials, equipment, devices, and modules. Garen Semiconductor was listed alongside these industry-leading companies, fully demonstrating the market value and growth potential of gallium oxide dedicated equipment within the power semiconductor industry.
This award represents strong recognition of Garen Semiconductor’s technological innovation and market development in gallium oxide equipment. Moving forward, the company will continue to focus on ultrawide-bandgap semiconductor equipment and materials, further advancing the industrialization of gallium oxide and injecting new momentum into the high-quality development of the fourth-generation semiconductor industry.
At present, the SCIENCE series research-grade VB crystal growth systems are available for order. Upholding an open and collaborative philosophy, the company sincerely invites universities and research institutes across the country to join hands in exploring the application potential of gallium oxide and co-creating new value in the semiconductor industry.
About Garen Semiconductor
Hangzhou Garen Semiconductor Co., Ltd. is a globally leading provider of gallium oxide materials and equipment solutions, specializing in the R&D and industrialization of ultrawide-bandgap semiconductor technologies. Its core products include 2–8 inch gallium oxide single crystals and substrates (with 8-inch substrates being world-first), VB (Vertical Bridgman) crystal growth equipment for gallium oxide, and 2–8 inch homoepitaxial wafers (also with 8-inch wafers being world-first). The company is committed to building an integrated “equipment–crystal–substrate–epitaxy” product chain, providing systematic solutions for global customers. Its achievements have been featured in major media outlets including People’s Daily, Xinhua News Agency, Science and Technology Daily, Sina Finance, Zhejiang TV Blue News, and The Paper.
For more information about Garen Semiconductor and its products, please visit our official website: http://garen.cc/
Or contact us via the following ways:
Mr. Jiang: 15918719807
E-mail: jiangjiwei@garen.cc
Mr. Xia: 19011278792
E-mail: xianing@garen.cc

