【Others Papers】GaN/Sn:Ga₂O₃@MgO/Graphene Core–Shell Nanowires for Self-Powered Deep-UV Photodetector

      Researchers from Chongqing Institute of Green and Intelligent Technology have published a dissertation titled " GaN/Sn:Ga₂O₃@MgO/Graphene Core–Shell Nanowires for Self-Powered Deep-UV Photodetector " in ACS Applied Nano Materials.

Abstract

      To address high dark current and surface defects in β-Ga₂O₃ nanowire (NW) photodetectors, we report a multilayered core–shell heterostructure based on GaN/Sn:Ga₂O₃@MgO/graphene. Sn-doped Ga₂O₃ NW arrays were grown via CVD on GaN substrates, followed by thermal evaporation of an MgO passivation shell and spin-coating of graphene. The MgO shell suppresses surface-state recombination and facilitates carrier separation through band bending, while the graphene layer optimizes carrier-transport paths and energy-level matching. Under 254 nm illumination (82 μW/cm²), the device exhibits outstanding performance: a low dark current of 85.6 pA, a high PDCR of 2.13 × 10⁴, a responsivity of 0.71 A/W, and a specific detectivity (D^*) of 2.40 × 10¹³ Jones. This synergistic architecture provides a robust strategy for high-performance deep-ultraviolet (DUV) detection.

DOI：

https://doi.org/10.1021/acsanm.6c01763