【Specialist Intro】Sai Qinglin —— the Member of Technical Expert Committee

Profile

      Researcher, graduated from the Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences in 2013 with a doctoral degree, under the supervision of Researcher Xia Changtai (a pioneer in the research of Gallium Oxide materials in China). At the end of 2019, He co-founded Hangzhou Fujia Gallium Technology Co., LTD., with Researcher Qi Hongji. In 2021, he was selected into the Youth Innovation Promotion Association of the Chinese Academy of Sciences. At present, He is mainly engaged in research on the characterization and control of Gallium Oxide growth defect, etc. He has developed doping control techniques for various elements, including the VB group, and obtained international patent authorization; The EFG method Gallium Oxide growth process with dynamic atmosphere regulation under a quasi-closed structure was developed and optimized. Based on the global three-dimensional simulation, through the modular disassembly design of the thermal field, the local fine design of the thermal field for non-rotational axial symmetry and the decoupling of the thermal field gradients in all directions have been achieved. The magnification of the single crystal diameter from 2 to 6 inches and the thickening of 12mm have been completed. Currently, efforts are being made to study the generation mechanism and suppression of key defect. He has undertaken multiple major research projects such as the National Natural Science Foundation of China, Shanghai Science and Technology Key Projects, government projects, and  the National Key Research and Development Program of China projects. And has published over 20 papers and obtained more than ten authorized invention patents.

Expert's Message

      Gallium Oxide (Ga₂O₃), with its significant advantages such as ultra-wide band gap (4.8eV) and ultra-high breakdown field strength (8MV/cm), is leading the future revolution of ultra-wide band gap semiconductors. With China achieving technological breakthroughs in 6-8-inch substrates in technologies such as the EFG method, Vertical Bridgman method, and casting method, industrial competition has shifted from the size comparison of single crystal to the in-depth optimization of material properties. defect control, low-cost melt method processes, and high-quality epitaxy are gradually becoming the core of material breakthroughs. At present, we should seek distinctive application scenarios, build differentiated advantages, accelerate the full-chain collaboration and iteration of "materials - devices - applications", transform the theoretical potential of Gallium Oxide into industrial discourse power, and support China seize the initiative in the global semiconductor transformation.