【Member News】Breakthrough Progress in Fujia Gallium - First Domestic Achievement of Growing 3-Inch Gallium Oxide Crystals Using the VB Method

      In July 2024, Hangzhou Fujia Gallium Technology Co., LTD. (referred to as "Fujia Gallium") used the Vertical Bridgman method (VB) for the first time in China to grow 3-inch Gallium Oxide single crystal, which is another major breakthrough for the company in the field of Gallium Oxide single crystal growth. It marks marking another important step for the company in the Gallium Oxide single crystal production technology. Inject new vitality into the industrialization of semiconductor materials in China.

Figure 1. Gallium Oxide bulk by VB method

Figure 2. VB method Gallium Oxide wafer

      It is understood that Fujia Gallium has always adhered to an industrialization orientation, and has successively made breakthroughs in the Edge-defined Film-fed Growth Technique (EFG) 6-inch conductive type and insulating type of Gallium Oxide substrate growth technology and EFG "one-key crystal growth" equipment. Based on the simulation technology, they successfully developed the VB method of Gallium Oxide crystal growth equipment, and achieved growth of 3-inch Gallium Oxide single crystal.

      The growth cost of Gallium Oxide crystals is greatly reduced by VB method without the use of iridium. At the same time, the temperature field of the growth process is uniform and the temperature gradient is small, so it is easier to realize the growth of large size and high quality Gallium Oxide crystals. In addition, the growth process of VB method is stable, which is more suitable for automatic and large-scale production. Looking to the future, Fujia Gallium will continue to increase its investment in research and development, and promote the further optimization and application expansion of Gallium Oxide single crystal technology.

About Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. Mainly engaged in the growth of Gallium Oxide single crystal materials, Gallium Oxide substrate and epitaxial wafer research and development, production and sales, the products are mainly used in power devices, microwave radio frequency and photoelectric detection fields.

       At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium Industry", and 3 software copyrights (crystal growth control software).

For more information about Hangzhou Fujia and its products

Please visit our official website: www.fujia-hiom.com