【Member News】GAREN · New Breakthrough ︱ Successful Preparation of VB Method (Non-Iridium Crucible) 2-Inch Gallium Oxide Single Crystal，Bright Future Ahead

      In October 2024, Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as GAREN SEMI) achieved a new technological breakthrough in Gallium Oxide crystal growth, based on the self-developed exclusive equipment for Gallium Oxide crystal growth (non-iridium crucible). It is the first time in China that 2-inch Gallium Oxide single crystal of different doping types (unintentionally doped (UID) and N-type) have been successfully grown by Vertical Bridgman method (VB).

Vertical Bridgman method 2 inch Gallium Oxide single crystal (UID)

Vertical Bridgman method 2 inch Gallium Oxide single crystal (N-Type)

      The international Gallium Oxide substrate manufacturers are gradually adopting the innovative technology of VB method to iterate the traditional EFG method of Gallium Oxide single-crystal growth. The VB method, with its significant competitive advantages, is becoming the new favorite of the industry:

      1, VB method does not use precious metal iridium crucible, so it is unnecessary to considering the oxidation loss of the crucible, compared with the common method that use of iridium crucible, the cost can be reduced to 1/50.

      2, VB method can be used to grow single crystal in air atmosphere, which can effectively inhibit the high-temperature decomposition of Gallium Oxide, reduce defects such as inclusions in crystals caused by crucible corrosion, and improve the crystal quality.

      3, VB method temperature gradient is small, because the number of dislocation induced by crystal thermal stress is small, the crystal quality is high.

      4, VB crystal growth in the crucible, the crystal diameter is the crucible diameter, so there is no need to control the crystal diameter. It has low technical difficulty and high stability, making it easy to achieve automatic control.

      In addition, conductive(N-type) Gallium Oxide single crystal substrate not only has excellent conduction characteristics, but also can dissipate the heat generated by the device, which significantly improves the device performance. Therefore, the N-type doping of Gallium Oxide single crystal is one of the focus directions in the industry. GAREN SEMI has broken through the N-type doping technology of VB method, and can provide multi-crystal face 2-inch N-type substrate, providing more choices for subsequent epitaxy and device links, and providing new power generation for the development of Gallium Oxide industry chain.

      In September this year, GAREN SEMI launched its self-developed exclusive equipment for Gallium Oxide crystal growth, which not only meets the high temperature and high oxygen environment required for Gallium Oxide growth, but also enables fully automated crystal growth. It reducing manual intervention and significantly improving production efficiency and crystal quality. At present, the wafer level substrate sizes supplied by the domestic and international Gallium Oxide market are mainly concentrated in 2 inches and 4 inches. Our facility is capable of producing single crystal Gallium Oxide with a various of crystal face, while also having the ability to upgrade to 4-inch single crystals. This not only meets the evolving needs of epitaxy technologies and devices, but also meets the needs of universities, scientific research institutions and enterprise customers for research and production of Gallium Oxide crystal growth.

      This major breakthrough not only successfully broke the technical blockade of western countries in the field of Gallium Oxide equipment and materials, but also provided strong support for the major needs of China. The company will continue to be committed to continuous innovation in the Gallium Oxide industry chain to provide a solid product guarantee for the development of Chinese semiconductor industry.

      Since its establishment in September 2022, GAREN SEMI has emerged in the field of wide bandgap semiconductor materials with its outstanding scientific and technological strength. As a high-tech enterprise integrating R&D, production and sales, GAREN SEMI focuses on the development of Gallium Oxide substrates, epitaxy and equipment, and is committed to promoting the innovation of semiconductor technology. Since its establishment, GAREN SEMI has won the honors of National Technology Small and Medium-Sized Enterprise, Zhejiang Provincial Innovative Small and Medium-Sized Enterprise, Zhejiang Provincial Technology Small and Medium-Sized Enterprise, and successfully won the support of Xiaoshan District "5213" Plan (excellent class) and Hangzhou Xiaoshan District Leading Innovation and Entrepreneurship Project. These honors and projects support demonstrate GAREN SEMI's leading position in technological innovation and industrial applications.

      Looking forward to the future, the R&D team of GAREN SEMI will continue to pursue innovation, commit to the research and development of Gallium Oxide substrates with higher cost effectiveness and better quality, promote the Gallium Oxide industry to higher quality, and support to achieve the development goal of "Carbon Neutrality" and " Carbon Peak".

Company Profile

      Hangzhou GAREN SEMI Co., Ltd. was established in September 2022, is a technology enterprise focusing on the research and development, production and sales of Gallium Oxide and other semiconductor materials. The company has created a new technology for Gallium Oxide single crystal growth, and has more than ten international and domestic invention patents, breaking through the monopoly and blockade of Western countries such as the United States and Japan on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

For more information about GAREN SEMI and its products

Please visit our official website: http://garen.cc/

Or contact us:

Mr. Jiang :15918719807

Email: jiangjiwei@garen.cc

Mr. Xia :19011278792

Email:xianing@garen.cc