【Device Papers】Performance Improvement of Dye-Sensitized Solar Cells by Using Ga₂O₃ Blocking Layer Passivation

      Researchers from the Da-Yeh University have published a dissertation titled "Performance improvement of dye-sensitized solar cells by using Ga₂O₃ blocking layer passivation" in Journal of Materials Science.

Abstract

      In this study, Ga₂O₃ blocking layers (BLs) are used to improve the properties of dye-sensitized solar cells (DSSCs) by sputtering. The wide energy bandgap of Ga₂O₃ BLs not only can passivate the surface defects of TiO₂ working electrodes but also can prevent the reverse leakage current from narrow energy bandgap of TiO₂ working electrode. Compared with conventional narrow energy bandgap BLs, wide energy bandgap BLs are more effective in enhancing the power generation efficiency of DSSCs. After Ga₂O₃ BL deposited on TiO₂ working electrode, the proportions of Ti³⁺ and Ti²⁺ can be reduced and the proportion of stable valence Ti⁴⁺ can be increased considerably. Moreover, the efficiency of DSSC with Ga₂O₃ BL increased from 4.06% to 5.72%. According to the results of electrochemical impedance spectroscopy analysis, the Ga₂O₃ BL increased the DSSC carrier lifetime from 0.17 to 0.35 ms and charge collection efficiency from 55.28% to 61.77%. Accordingly, the results of this study indicate that wide energy bandgap Ga₂O₃ BLs effectively prevent the formation of reverse leakage current, passivate working electrode defects in DSSCs, and are suitable for improving the performance of optoelectronic devices.

DOI：

doi.org/10.1007/s10853-024-10113-9