【Member News】GAO SEMI Invite You to Gather IFWS&SSLCHINA2024

      On November 18-21, 2024, the 10th International Forum on Wide Bandgap Semiconductors (IFWS2024) & 21st China International Forum on Solid State Lighting (SSLCHINA2024) and China Advanced Semiconductor Technology and Application Show (CASTAS) will be held in Hall G of Suzhou International Expo Center.

      Suzhou GAO SEMI Co., Ltd. will bring a variety of products to the exhibition. On this occasion, we sincerely invite the third and fourth generations of semiconductor industry colleagues to come to Booth B41 to visit and discuss cooperation. At the same time, Li Shan, Associate Professor of Nanjing University of Posts and Telecommunications and R&D Director of Suzhou GAO SEMI, will attend the forum and share the theme report "Research on the Epitaxial Growth by PECVD and Photoelectric Information Sensing Devices of Gallium Oxide " in the sub-forum of "Ultra-Wide Bandgap Semiconductor Technology I". He will introduce the research progress in the epitaxial growth technology and doping control of Gallium Oxide films by PECVD. Please stay tuned!

Reporting Guest

Li Shan

Associate Professor, Nanjing University of Posts and Telecommunications, Suzhou Research and Development Director of GAO SEMI

      Li Shan, Associate professor of Nanjing University of Posts and Telecommunications, Master supervisor, World's Top 2% Scientists (2023/2024), Young Talents of Jiangsu Science and Technology Association. Focusing on the growth of ultra-wide bandgap semiconductor Gallium Oxide materials and information sensing devices, he has published more than 30 high-level academic papers as the first author or corresponding author in the past five years, including IEEE TED/EDL/PTL, APL, JPCL, etc., and has been cited more than 2000 times. Presided over/participated in more than 10 projects, including National Key R&D Program, National Natural Science Foundation Key and Youth Projects, Jiangsu Province Entrepreneurship and Innovation Team Project, the Open Competition Mechanism to Select the Best Candidates Project of Suzhou City, etc.

      Presentation: Research on the Epitaxial Growth by PECVD and Photoelectric Information Sensing Devices of Gallium Oxide

      Lecture Venue: Ultra-Wide Bandgap Semiconductor Technology I

Product Introduction

I. Gallium Oxide Single Crystal Substrate

(1) Multi-Specification Single Crystal Substrate

Gallium Oxide substrate

II. Gallium Oxide Single Crystal Growth and Epitaxy Equipment

Gallium Oxide single crystal furnace

MOCVD equipment

      Suzhou GAO SEMI Co., Ltd. can independently design and produce Gallium Oxide crystal growth furnace for Gallium Oxide, which can provide crystal verification. And independently modified MOCVD for Gallium Oxide homogeneous epitaxy or sapphire epitaxy growth, to provide complete machine sales and third-stage demo services.

III.Gallium Oxide Epitaxial Wafer

Gallium Oxide epitaxial wafer