【Device Papers】Comprehensive Study on Trapping-Induced Dynamics in β-Ga₂O₃ Schottky Barrier Diodes Under Continuous Switching Stress

      Researchers from the National Tsing Hua University have published a dissertation titled "Comprehensive Study on Trapping-Induced Dynamics in β-Ga₂O₃ Schottky Barrier Diodes Under Continuous Switching Stress" in 2024 International Symposium on Power Semiconductor Devices and ICs (ISPSD 2024).

Abstract

      This paper presents a comprehensive study of the static and dynamic characteristics of Schottky barrier diodes based on a β-phased gallium oxide (Ga₂O₃) . The dynamic performances of β−Ga₂O₃ SBDs under continuous switching stress show a significant Schottky barrier height instability. The barrier height increases along with the increase of negative stress voltage (V_stress) . An optimized current transient methodology for characterizing device trap information is proposed. The set of dominant trap active energy is characterized as Ec−0.76 eV,−0.62 eV, and −0.47 eV. These findings provide evidence of possible instability of β−Ga₂O₃ based devices in power switch applications and offer a path for reducing instability issues.

DOI：

doi.org/10.1109/ISPSD59661.2024.10579683