【Member News】GAREN SEMI - New Fab | VB Method Crystal Growth Equipment Fully Move-In!

01 The New fab is Fully Put into Operation to Accelerate the Industrialization of Gallium Oxide

      In November 2024, the official opening of the Phase II fab of Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as "GAREN SEMI") marked the further deepening of the company's strategic layout in the field of Gallium Oxide and the realization of a qualitative leap in production capacity. The new fab introduces advanced industrial equipment in key segments such as crystal growth, wafer processing and epitaxial growth, and is expected to significantly increase production capacity to meet the growing global market demand for Gallium Oxide wafer substrates and epitaxial wafer.

      In the Phase II fab, the Vertical Bridgman method (VB method) Gallium Oxide special crystal growth furnace independently developed and sold by GAREN SEMI has been fully move-in, and the process is continuously optimized on the existing basis. Xia Ning, Technical Director, said, "Vertical Bridgman method is a globally recognized key technology for the industrialization of Gallium Oxide. As the only supplier in China that can provide such equipment, we are committed to promoting the rapid development of the Gallium Oxide industry and look forward to working with more customers to solve industry problems."

      With the new production line, GAREN SEMI will further enhance the production capacity of Gallium Oxide materials and equipment to meet the growing market demand for high-performance semiconductor materials and specialized equipment. The introduction of the new production line will enable the company to achieve a new leap in product quality, production efficiency and cost control, and provide customers with better products and services.