【Epitaxy Papers】Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga₂O₃ film

      Researchers from the Semnan University have published a dissertation titled "Successful electric field modulation to enhance DC and RF features in SOI LDMOS transistors using a β-Ga₂O₃ film" in Journal of Materials Science: Materials in Electronics.

Abstract

      In this paper, a successful electric field modulation in Lateral Double-diffused Metal Oxide Semiconductor (LDMOS) transistors to enhance the electrical characteristics is presented. A β-Ga₂O₃ film in the drift region is incorporated. The β-Ga₂O₃ film leads to a more efficient electric field modulation and enhances the DC and RF capabilities. Also, a Silicon layer is embedded in the buried oxide of the proposed structure to improve self-heating effects. Overall, the proposed β-Ga₂O₃ film in SOI LDMOS (βF-LDMOS) structure offers improved performances in terms of electric field distribution, maximum available power gain, unilateral power gain, gate-drain capacitance, breakdown voltage, and maximum lattice temperature. This makes it a promising candidate for RF power applications requiring high voltage and high power handling capabilities.

DOI：

https://doi.org/10.1007/s10854-024-13278-w