【Specialist Intro】Li Shan —— the Member of Technical Expert Committee

Profile

Li Shan

      Li Shan is an associate professor and master supervisor of College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications. 2023/2024-World's Top 2% Scientists, selected as the 2024 Jiangsu Provincial Youth Science and Technology Talent Nurturing Project, guest editor of Crystal of MDPI Publishing Institute. He graduated from Beijing University of Posts and Telecommunications majoring in Electronic Science and Technology. He has won the honors of Beijing Outstanding Graduate and Hunan Outstanding Dissertation. He is mainly engaged in the research of wide bandgap/ultra-wide bandgap semiconductor materials and information sensing devices. As the first author or corresponding author, he has published more than 30 academic papers in core journals in APL, JPCL, SCTS, IEEE TED/EDL and other fields, been cited more than 2100 times, and applied for more than 10 invention patents. At present, he has presided over the National Natural Science Youth Foundation of China, Natural Science Youth Foundation of Jiangsu, General Program of Universities Natural Science Research of Jiangsu, and participated in the National Key Research and Development Program of China, the National Natural Science Foundation Joint Key Project, Jiangsu Province Entrepreneurship and Innovation Team project, etc. He has been invited to the International Workshop on Gallium Oxide and Related Materials (IWGO), Asia-Pacific Workshop on Widegap Semiconductors (APWS), 10^th International Forum on Wide Bandgap Semiconductors(IFWS), Asia-Pacific Conference on Silicon Carbide and Related Materials (APCSCRM), Cross-Strait Conference on Gallium Oxide and Related Materials and Devices (CSGO),  National Wide Bandgap Semiconductor Conference (WBSC) and other oral presentations and wall exhibitions.

Expert's Message

      Ultra-wide bandgap semiconductor Gallium Oxide material is rich in physical properties, and has great application potential in the fields of information sensing and power electronics. Our team focuses on the preparation of Gallium Oxide large-size single crystal substrate, high-quality epitaxial growth and development of information sensor devices, and is committed to overcoming the application bottleneck of Gallium Oxide from materials to devices, contributing to the realization of China's ultra-wide bandgap semiconductor technology innovation.