【Device Papers】Hetero-interface boosted high-performance a-Ga₂O₃ thin-film phototransistors

      Researchers from the Shanghai University have published a dissertation titled "Hetero-interface boosted high-performance a-Ga₂O₃ thin-film phototransistors" in Applied Surface Science.

Abstract

      This study explores the enhancement of amorphous gallium oxide (a-Ga₂O₃) thin-film phototransistors through the construction of a hetero-interface with magnesium-doped zinc oxide (Mg:ZnO). The optimized a-Ga₂O₃/Mg:ZnO interface significantly improves the separation, transport, and collection of photogenerated carriers, leveraging the excellent electron transport properties of Mg:ZnO. The resulting phototransistors exhibit high photoresponsivity, up to 1.27 A/W, and demonstrate X-ray detection capabilities with a remarkably thin photosensitive layer (∼60 nm). These advancements indicate potential applications in highly sensitive and selective UV photodetection technologies for remote sensing, environmental monitoring, and UV communication systems. This research highlights the effectiveness of hetero-interface engineering in overcoming the intrinsic limitations of a-Ga₂O₃, enhancing the performance and applicability of Ga₂O₃-based optoelectronic devices.

DOI：

https://doi.org/10.1016/j.apsusc.2024.161179