【Substrate Papers】Towards First-Principles Predict of Doped α-Ga₂O₃ Based Structural and Electrical Properties

      Researchers from the  China Jiliang University have published a dissertation titled "Towards First-Principles Predict of Doped α-Ga₂O₃ Based Structural and Electrical Properties" in Materials Today Communications.

ABSTRACT

      α-Ga₂O₃ has gained increasing attention in the field of photodetectors because of its wide bandgap and exceptional chemical and physical properties. Si-doped α-Ga₂O₃ single-crystal epitaxial films were successfully deposited on sapphire substrates using an affordable and non-vacuum-based mist chemical vapor deposition (Mist-CVD) technique. An interdigital metal-semiconductor-metal (MSM) photodetector with excellent performance was prepared by using the thin film. At 254 nm illumination and a bias voltage of 20 V, the photodetector has a high light-to-dark current ratio of 3.24×10⁶, a responsivity of 3.23×10² A/W, a detectivity of 8.80×10¹⁵ Jones, and an external quantum efficiency of 1.58×10⁵%. The results show that Si-doped α-Ga₂O₃ thin films have great potential for application in high-performance photodetectors.

DOI：

https://doi.org/10.1016/j.mtcomm.2024.109902