【Member News】New Progress ︱ Hangzhou GAREN SEMI Realizes the Growth of 2 Inch N-Type Gallium Oxide Single Crystal by Czochralogon Method

Recent Progress

Cz Method 2-Inch N-Type (010) Crystal Face Gallium Oxide Substrate

      In October 2024, Hangzhou GAREN SEMI Co., Ltd. achieved a technological breakthrough in the growth and electrical performance control of Gallium Oxide crystals, successfully growing 2-inch N-type Gallium Oxide single-crystal and preparing 2-inch wafer-grade N-type (010) crystal face Gallium Oxide single-crystal substrate. Substrate average resistivity < 30mΩ·cm, resistivity uniformity < 5%, marking the company in the field of ultra-wide band gap semiconductor materials made a solid step.

2-inch N-type Gallium Oxide single crystal bulk and wafer-grade (010) Gallium Oxide single crystal substrate

Breakthroughs and Innovations

      GAREN SEMI has been committed to the research and development of Gallium Oxide crystal growth technology, this year has completed the technical breakthrough of 2-inch UID and semi-insulated Cz crystal, and successfully solved the problem of (010) crystal substrate processing technology, becoming the first and currently the only international supplier of 2-inch (010) face substrate products. In the pilot phase of 2-inch UID and semi-insulated Cz bulk, GAREN SEMI has improved the stability of Shoulder Growth and Equiaxed Growth through process innovation, and recently realized the technology of single crystal growth, thereby overcoming the defect of high volatilization of Sn doped and successfully preparing conductive Gallium Oxide single crystal.

Advantages of (010) Crystal Face

      Among the mainstream Gallium Oxide single crystal substrates, the (010) crystal face is favored for its excellent physical properties and epitaxial performance. (010) crystal face has the highest thermal conductivity, which is conducive to improving the performance of power devices; (010) crystal face epitaxy allows the fastest growth rate, which meets the needs of industrialization. The device based on (010) crystal face has better performance than other crystal face. However, due to the size, performance and processing difficulty of the substrate, it can not be fully applied in scientific research and industry.

      At present, the conductive substrates prepared by GAREN SEMI break through the shackles of (010) wafer size, enrich the company's substrate product line, consolidate the scientific research foundation of Gallium Oxide epitaxy and devices, and meet the urgent needs of the development of Gallium Oxide industry.

Prospect for the Future

      Hangzhou GAREN SEMI is committed to solving the major needs of the country, and will continue to deepen the innovation of the Gallium Oxide upstream industry chain, to provide a solid product guarantee for the development of China's power electronics and other industries. The company's technological breakthrough has not only promoted the commercialization process of Gallium Oxide materials, but also contributed to the development of the global semiconductor industry.

Company Profile

      Hangzhou GAREN SEMI Co., Ltd. was established in September 2022, is a technology enterprise focusing on the research and development, production and sales of Gallium Oxide and other semiconductor materials. The company has created a new technology for Gallium Oxide single crystal growth, and has more than ten international and domestic invention patents, breaking through the monopoly and blockade of Western countries such as the United States and Japan on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

For more information about GAREN SEMI and its products

Please visit our official website: http://garen.cc/

Or contact us:

Mr. Jiang :15918719807

Email: jiangjiwei@garen.cc

Mr. Xia :19011278792

Email:xianing@garen.cc