【Device Papers】Ga₂O₃ fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga₂O₃ (010) substrates

      Researchers from the National Institute of Information and Communications Technology have published a dissertation titled "Ga₂O₃ fin field-effect transistors with on-axis (100)-plane gate sidewalls fabricated on Ga₂O₃ (010) substrates" in Japanese Journal of Applied Physics.

Abstract

      Ga₂O₃ fin field-effect transistors (FinFETs) were fabricated on β-Ga₂O₃ (010) substrates, which had on-axis (100)-plane gate sidewalls treated by nitrogen radical irradiation. The typical FinFET with a fin width (W_fin) of 400 nm demonstrated decent on-state device characteristics such as a low specific on-resistance of 6.9 mΩcm², a high drain current on/off ratio of over 10⁹, and a subthreshold slope of 82 mV/decade. The threshold voltage (V_th) of the FinFETs increased with decreasing W_fin, and enhancement-mode operation with V_th > 0 V was achieved for W_fin < 800 nm.

DOI：

https://doi.org/10.35848/1347-4065/ad7f38