【Device Papers】Self-Driven β-Ga₂O₃ Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes

      Researchers from the Anhui University have published a dissertation titled "Self-Driven β-Ga₂O₃ Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes" in IEEE Transactions on Electron Devices.

Abstract:

      Here, a β-Ga₂O₃ solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a β-Ga₂O₃ microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large I _light / I _dark ratio of 10³ , a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of 10¹¹ Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain 10³ . A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.

DOI：

https://doi.org/10.1109/TED.2024.3454590