【Domestic News】Zhang Wenrui, Researcher from Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, was Invited to Visit and Give Lectures at College of Materials Science and Engineering, Hubei University

      On November 13, 2024, at the invitation of college of Materials Science and Engineering of Hubei University and Research Center for Advanced Wide Gap Semiconductor Materials and Devices of Hubei University, Zhang Wenrui, Researcher of Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, visited the College to give lectures. In the afternoon of the same day, researcher Zhang Wenrui gave an academic report on the topic of " Research of Ultra-Wide Band Gap Gallium Oxide Semiconductor Epitaxy and Electronic Devices " in the lecture hall on the second floor of college. The lecture was presided over by Professor Shi De 'an, Deputy Dean of the School of Materials college. The teachers and students of materials college attended the lecture.

      In the presentation, Prof. Zhang Wenrui first gave a brief overview of his team's research progress in semiconductor epitaxial film growth, semiconductor carrier transport mechanism and wide band gap oxide semiconductor electronic devices. Next, Zhang Wenrui focused on his team's major research achievements in the field of a new type of ultra-wide band gap semiconductor——Gallium Oxide materials and devices. On the one hand, effective control of Gallium Oxide phase and high-quality epitaxial growth of films were achieved by synergistic control of growth technology, substrate orientation and micro-doping. Based on high-quality epitaxial films, the doping mechanism and conductance regulation of Gallium Oxide were studied, and the wide range of conductance regulation of thin films was realized, and it was applied to the design and preparation of high-performance Gallium Oxide power diodes. Finally, the effect of defect distribution on photo-generated carrier transport of Gallium Oxide films is studied. An effective method to regulate the spatial distribution and directional migration of carriers is developed. A design idea for preparing high-performance deep ultraviolet photodetectors is proposed. Zhang Wenrui's presentation was simple and profound, which aroused enthusiastic response from teachers and students attending the conference. During the exchange session, the participating teachers and students actively asked questions, and researcher Zhang Wenrui patiently answered those questions. Then the report was successfully concluded in a strong academic atmosphere and warm applause.

      After the meeting, Prof. He Yunbin of College of Materials Technology & Engineering invited Prof. Zhang Wenrui to visit the International Science and Technology Cooperation Base of Advanced Optoelectronic Conversion and Optoelectronic Catalytic Materials in Hubei Province and the Advanced Wide Gap Semiconductor Materials and Devices of Hubei University. The two sides had an in-depth discussion on future cooperation.