【Member News】Hangzhou Fujia Gallium Oxide Epitaxial Wafer Passed Two Rounds Device Verification, Has Significant International Competitive Advantages

      Recently, Hangzhou Fujia Gallium Technology Co., LTD. (hereinafter referred to as: Fujia Gallium) optimized the MBE epitaxy process on the basis of the first round of device verification, and greatly improved the performance of epitaxial wafer. Based on this epitaxial wafer developed MOSFET lateral power device, the current density increased by 78.3%, and the on-resistance decreased by about 50%, so that it has a significant international competitive advantage. The above work is supported by the national key research and development program "Research on Large-Size Gallium Oxide Semiconductor Materials and High-Performance Devices" (Project Number: 2022YFB3605500).

FIG. 1 DC output characteristic curve of Gallium Oxide MOSFET lateral power device, a) the second round results, b) the first round results

      High quality epitaxial wafer is the core component for the preparation of MOSFET lateral power device. MBE epitaxial technology is often used for the preparation of high-quality epitaxial films below 1 μm because of its high quality of film growth and precise film thickness control. However, the heating parts of MBE epitaxy equipment are easily oxidized under high temperature and oxygen-rich environment, and there are difficulties in doping and defect control. The preparation of high-quality MBE Gallium Oxide epitaxy films has become a hot and difficult problem in this field. With the support of the national key research and development plan, Fujia Gallium has solved the problem of MBE epitaxy equipment and process preparation, and obtained high-quality MBE Gallium Oxide epitaxial wafer. The second tape out test results show that the 12 μm gate-drain spacing Gallium Oxide MOSFET device has a current density of 107 mA/mm and a specific on-resistance of approximately 21.2 mΩ∙cm² (Figure 1 a). Compared with the device of the same specification of the first tape out (FIG. 1 b), the current density is increased by 78.3% and the on-resistance is reduced by about 50%, showing good performance and having obvious international competitive advantages.

      In the future, Fujia Gallium will continue to improve and iterate epitaxial products according to the feedback results of device development, at the same time, increase market development, provide stable and controllable high-quality Gallium Oxide single crystal substrate and epitaxial products for downstream device manufacturers, and maintain China's competitive advantage in the development and industrialization of MBE Gallium Oxide epitaxial film.

About Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. Mainly engaged in the growth of Gallium Oxide single crystal materials, Gallium Oxide substrate and epitaxial wafer research and development, production and sales, the products are mainly used in power devices, microwave radio frequency and photoelectric detection fields.

       At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium Industry", and 3 software copyrights (crystal growth control software).

For more information about Hangzhou Fujia and its products

Please visit our official website: www.fujia-hiom.com