【Domestic News】Glad Tiding | The Achievements of Distinguished Professor Guo Daoyou from College of Science Won the Third Prize of Zhejiang Natural Science Award

      On the morning of November 22, 2024, the Mobilization and Deployment Meeting of Accelerating Construction and Innovation Zhejiang's Development of New Quality Productivity According to Local Conditions and the Provincial Science and Technology Award Conference were held in Hangzhou. The meeting announced the decision about 2023 Zhejiang Provincial Science and Technology Award. The project "Growth, Physical Property Regulation and Device Application of Ultra-Wide Bandgap Oxide Semiconductor Materials" completed by the "Zhejiang Sci-Tech University Gallium Oxide" team led by Prof. Guo Daoyou, Department of Physics, College of Science, won the third prize of Zhejiang Natural Science Award.

      The results reveal a new bipolar phenomenon of photochemical photocurrent of Gallium Oxide system, develop a new method of film epitaxy growth and a new technology of oxygen vacancy electroactivity inhibition, reveal the mechanism of surface state control of metal-semiconductor interface, establish a structure-activity model of material-interface-devices, and realize the development of high-performance Gallium Oxide based information sensing prototype devices. Under the background that developed countries such as the United States and Japan have blocked the related technologies of ultra-wide bandgap semiconductors, this achievement has enriched the theory and practice of wide bandgap oxide semiconductors, promoted the development of China in this field, and enhanced the international competitiveness.

      It is reported that Gallium Oxide is a typical representative of ultra-wide bandgap oxide semiconductors, and has important application prospects in the fields of ultra-high voltage and high power devices, and solor-blind deep ultraviolet photoelectrodetection, which are related to national defense security and national economic development. For more than ten years, the Zhejiang Sci-Tech University Gallium Oxide Team has been specializing in the research of Gallium Oxide materials and devices, and has made many important breakthroughs and progress in material growth, crystal phase/physical property regulation, surface interface/energy band engineering, metal-semiconductor contact, photoelectric and information storage device structure design and construction.

      The Main Achievements Include:

      A new growth method of Gallium Oxide epitaxial films/nanomaterials was developed, and key technologies of crystal phase/physical property regulation were mastered. The bipolar behavior of photochemical photocurrent was discovered and the physical mechanism was elucidated. A new technique for inhibiting the electrical activity of oxygen vacancies of Gallium Oxide materials with cationic valence change was developed, and the surface state of oxygen vacancies was revealed to be very important for metal/semiconductor contact. A number of Gallium Oxide based self-powered Solar-blind UV detectors have been developed first, among which GaN/Ga₂O₃ pn junction detectors have set and maintained a record of photoresponsiveness at 0V.