【Epitaxy Papers】Mercury-probe measurement of electron mobility in β-Ga₂O₃ using junction moderated dielectric relaxation

      Researchers from the Mercury-probe measurement of electron mobility in β-Ga₂O₃ using junction moderated dielectric relaxation have published a dissertation titled "Mercury-probe measurement of electron mobility in β-Ga₂O₃ using junction moderated dielectric relaxation" in Japanese Journal of Applied Physics.

Abstract

      We demonstrate the junction-moderated dielectric relaxation method to measure the in-plane electron mobility in β-Ga₂O₃ epitaxial layers. Unlike the Hall technique and channel mobility measurement in field-effect transistors, this method does not require deposition of permanent metal contacts. Rather, it measures the bias voltage and frequency dependence of the equivalent capacitance of the mercury/β-Ga₂O₃ /mercury structure consisting of a Schottky contact, a quasi-neutral thin film semiconductor, and an Ohmic contact connected in series. The intrinsic dielectric relaxation of the bulk β-Ga₂O₃ semiconductor typically occurs at ~ 10¹² s^-1, but when moderated by the mercury/β-Ga₂O₃ Schottky junction, it manifests itself as an inflection in the capacitance-frequency characteristics at a much lower frequency ~ 10⁶ s^-1 within the range of most capacitance measuring instruments. Using carrier density and layer thickness determined from capacitance-voltage measurement, we extract the electron mobility of β-Ga₂O₃ from the junction-moderated dielectric relaxation frequency.

DOI：

https://doi.org/10.35848/1347-4065/ad8531