【Member News】Li Shan, R&D Director of GAO SEMI: Research on the Epitaxial Growth by PECVD and Photoelectric Information Sensing Devices of Gallium Oxide

      Recently, the 10th International Forum on Wide Bandgap Semiconductors & the 21st China International Forum on Solid State Lighting (IFWS&SSLCHINA 2024) was held in Suzhou. During the session, on the "Ultra-Wide Bandgap Semiconductor Technology I" sub conference, Li Shan, associate professor of Nanjing University of Posts and Telecommunications and R&D director of Suzhou GAO SEMI, made a keynote report on " Research on the Epitaxial Growth by PECVD and Photoelectric Information Sensing Devices of Gallium Oxide ", sharing the research progress of PECVD epitaxy growth and control, and Gallium Oxide photoelectric information sensors. Related to PECVD epitaxial growth cavity pressure control, temperature control, growth mode, annealing control, alloy doping control, InGaO photodetector, PPC effect of InGaO, InGaO alloy compound film, neuromorphic vision sensor, etc.

Li Shan

Associate Professor, Nanjing University of Posts and Telecommunications,

R&D Director of GAO SEMI, Suzhou

      The report shows that the research team has developed novel information-sensing applications from the rich physical properties of Gallium Oxide, an ultra-wide band gap semiconductor. According to the report, the epitaxial growth technology of 2-inch Gallium Oxide film based on PECVD (controlled cavity pressure and temperature) was developed, and the island pattern growth of Gallium Oxide film was realized. The oxygen vacancy defect of PECVD Gallium Oxide epitaxial films was effectively reduced by oxygen atmosphere temperature annealing, and the light-dark current ratio was increased by 2 orders of magnitude. In/Ga alloy doping achieves continuous control of the band gap width of InGaO films from 3.9 to 4.9 eV. InGaO MSM devices doped with 0.02 ratio achieve high quality optical imaging. InGaO film with 0.1 doping ratio has phase separation, defect and grain boundary synergistic which will enhance PPC effect, realizing the sensing function of neuromorphic vision sensor.

Guest Introduction

      Li Shan, Associate professor, Master supervisor, Nanjing University of Posts and Telecommunications, World's Top 2% Scientists (2023/2024), Young Talents of Jiangsu Association for Science and Technology. Focusing on the growth of ultra-wide bandgap semiconductor Gallium Oxide materials and information sensing devices, he has published more than 30 high-level academic papers as the first author or corresponding author in the past five years, including IEEE TED/EDL/PTL, APL, JPCL, etc., and has been cited more than 2000 times. Presided over/participated in more than 10 projects, including National Key Research and Development Program of China, National Natural Science Foundation Key and Youth Projects, Jiangsu Province Entrepreneurship and Innovation Team Project, the Open Competition Mechanism to Select the Best Candidates Project of Suzhou City, etc.

Suzhou GAO SEMI Co., LTD

      Suzhou GAO SEMI Co., Ltd. is a high-tech enterprise specializing in the research and development of Gallium Oxide materials, related devices and their applications. The company's core technology is derived from the research achievements of the founding team in the field for more than 10 years, we provide a range of services, including the production and development of high-quality single crystal substrates and epitaxial wafer, single crystal and epitaxial equipment, highly sensitive solar blind UV detector parts, high voltage high temperature high frequency large power electronic devices and customized services to meet specific requirements.