【Domestic News】Intelligent Collision: Academic Exchanges Accelerate Breakthroughs in Gallium Oxide Materials

Prof. Liu Wenjun from Fudan University was Invited to Give a Lecture at College of Electronic and Electrical Engineering, Henan Normal University

      At the invitation of College of Electronic and Electrical Engineering, Henan Normal University, Professor Liu Wenjun from Fudan University held a special academic lecture entitled "Research Progress of New Type Gallium Oxide Power Diodes" at 14pm on December 15 in C-208, North Building of Physics. More than 50 representatives of college, teachers and students attended the lecture. The lecture was hosted by Wang Fang, Vice President of college of Electronic and Electrical Engineering.

      Professor Liu Wenjun first introduced the method of constructing NiO/β-Ga₂O₃ p-n heterojunction diode based on the results of his team; Secondly, the preparation process of p-NiO/n-Ga₂O₃ trench MOS heterojunction diode is described. Finally, the existing problems in the research of Gallium Oxide are summarized and the future prospects are given.

      After the lecture, the young teachers and postgraduates asked Professor Liu Wenjun about the content of the lecture and the hot issues in the research direction. Liu Wenjun gave detailed answers to the questions raised, and encouraged the young teachers and postgraduates to conduct in-depth research in this field.

      Liu Wenjun , a researcher and doctoral supervisor at the College of Microelectronics, Fudan University. His main research interest is wide band gap power devices, processes and CMOS back-end process-compatible memory devices and reliability. From 2009 to 2015, he worked in Nanyang Technological University, Singapore, and University of Tokyo (JSPS Researcher), Japan. He was engaged in semiconductor devices and processes, failure analysis, etc. He has been awarded a number of provincial and ministerial projects such as Key Research and Development of the Ministry of Science and Technology of the People´s Republic of China, General Program of Natural Science Foundation, Shanghai Integrated Circuit Special Project, and Fourth Generation Semiconductor Technology Innovation Special Project. He has published more than 100 papers, including 6 IEEE IEDM/IRPS papers, EDL/TED 30 papers, citations >2700 times, and applied for more than 20 patents. At present, he is the reviewer of Nano Lett and other journals, and guest editor of Nanoscale Research Letters and Nanomaterials of international journals. Wrote a monograph "Thin Film Transistor Microelectronics"; Won the Shanghai "Pujiang Talent" program, Fudan University "ZhongYang-Style" innovation team backbone member.

Professor Daniela Gogova from Linkoping University in Sweden Visited College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications for Academic Exchange

       On the afternoon of November 12, Professor Daniela Gogova, principal researcher of Linkoping University in Sweden and scientist of the Bulgarian Academy of Sciences, was invited by Professor Tang Weihua of Nanjing University of Posts and Telecommunications. Delivered an academic report entitled "Developing Next Generation High-Power Ga₂O₃ Material" in Conference Room 310, Pukou No.1 Building, College of Integrated Circuit Science and Engineering College of Nanjing University of Posts and Telecommunications (College of Industry Education Integration). The presentation was chaired by Professor Tang Weihua and attended by faculty and postgraduates from relevant research fields of college.

      Starting from the material advantages and application prospects of Gallium Oxide in ultra-wide band gap semiconductors, Professor Gogova analyzed the reasons why Gallium Oxide has become a worldwide research hotspot in recent years. Based on the research results, the pioneering Hot-wall MOCVD technology was introduced, and the advancement of this technology in the preparation of high-quality Gallium Oxide homogeneous/heterogeneous epitaxy materials was shared. In the course of the academic presentation, Professor Gogova had a heated discussion with the teachers and students attending the conference. Afterwards, the PhD students of IC-GAO research group presented their research progress in the form of academic report, and Professor Gogova commented on the research work of each PhD student and highly praised the importance of their research.

      The academic exchange lasted for nearly three hours with a strong academic atmosphere, which not only provided a valuable opportunity for college teachers and students to exchange foreign languages, but also expanded their international vision and thinking in the field of Gallium Oxide.