【Member News】Hangzhou GAREN SEMI Successfully Prepared 4-inch Gallium Oxide Single Crystal by VB Method (Non-Iridium Crucible)

      In January 2025, Hangzhou GAREN SEMI Co., LTD. (hereinafter referred to as "GAREN SEMI") once again made new progress in the field of Gallium Oxide crystal growth. Through iterative optimization and upgrading of the independent research and development of Gallium Oxide special crystal growth equipment, the Vertical Bridgman (VB) method was used to successfully grow 4-inch Gallium Oxide single crystal which is the first time to achieve this technological breakthrough in China. The type of VB method Gallium Oxide crystal growth equipment and process package are fully open for sale.

[Figure 1 Bottom surface of GAREN SEMI 4-inch Gallium Oxide single crystal by VB method]

[Figure 2 Top surface of GAREN SEMI 4-inch Gallium Oxide single crystal by VB method]

      It is worth mentioning that the GAREN SEMI adopts the fine seed crystal induction + conical shoulder-expanding technology to grow 4-inch Gallium Oxide single crystal, which is easier to ensure crystal quality than spontaneous nucleation of seedless crystals and equal diameter seed crystal technology. Among them, the seed crystal and the crystal axial direction are parallel to [010] orientation, and the 4-inch (010) surface substrate can be processed. Prior to this, GAREN SEMI experienced a research and development process from 2-inch single crystal grown by equal diameter seed crystals to 2-inch single crystal grown by fine seed crystal induction + conical shoulder-expanding technology, and finally determined the route of fine seed crystal induction + conical shoulder-expanding technology, and achieved a breakthrough in 4-inch single crystal growth.

The Advantages of (010) Face

      Among Gallium Oxide single crystal substrates, the (010) substrate has excellent performance in terms of physical properties and epitaxy. Firstly, the (010) substrate has the highest thermal conductivity, which is conducive to improving the performance of power devices; Second, (010) substrate has a fast epitaxial growth rate, good epitaxial matching, is an epitaxial preferred crystal plane. At present, GAREN SEMI has launched wafer-grade (010) Gallium Oxide single crystal substrate products, which are oriented to the scientific research market, to meet the demand for (010) substrates in the field of scientific research, and promote the collaborative cooperation of the industry-education-research.

The advantage of VB Method

      VB method has significant advantages in the growth of Gallium Oxide single crystal, is becoming the new favorite of the industry, and Gallium Oxide substrate manufacturers in domestic and international have begun to layout.

      Advantage 1: VB method is suitable for growing Gallium Oxide single crystal whose axial direction is parallel to [010] crystal direction, which is conducive to processing large-size (010) face single crystal substrate.

      Advantage 2: The VB method does not use precious metal iridium crucible, without considering the oxidation loss of the crucible, and the cost is greatly reduced compared with the common growth method using iridium crucible.

      Advantage 3: VB method can grow single crystal in air atmosphere, which can effectively inhibit the high-temperature decomposition of Gallium Oxide, reduce the inclusion in the crucible corrosion crystal and other defects, and improve the crystal quality.

      Advantage 4: VB method has a small temperature gradient, and the number of dislocations induced by crystal thermal stress is small, and the crystal quality is high.

      Advantage 5: VB crystals grow in the crucible, the crystal diameter is the crucible diameter, so there is no need to control the crystal diameter, low technical difficulty and high stability, easy to achieve automatic control.

GAREN SEMI Self-Developed Gallium Oxide Special Crystal Growth Equipment Version 2.0

      In September 2024, GAREN SEMI launched the first self-developed Gallium Oxide dedicated crystal growth equipment, which not only meets the high temperature and high oxygen environment requirements for Gallium Oxide growth, but also enables fully automated crystal growth, reducing manual intervention, and significantly improving production efficiency and crystal quality.

      Based on the initial equipment, the R&D team of GAREN SEMI carried out iterative optimization and upgrading. By optimizing the automatic temperature control system and internal thermal field structure, not only expanded the crystal size, improved the crystal growth stability, but also reduced the crystal growth cost and increased the service life of the equipment, which has outstanding advantages in the Gallium Oxide crystal growth and industrialization. In addition, large single crystal with a variety of crystal face can be obtained through process control and can be upgraded to larger sized single crystal to meet evolving epitaxy technology and device requirements.

      The advent of GAREN SEMI Gallium Oxide special crystal growth equipment version 2.0 will help the domestic Gallium Oxide industry to a new level. GAREN SEMI can also provide a variety of crystal face growth process documents to achieve highly personalized product customization, to meet the needs of universities, research institutes, and enterprise customers for the scientific research and production of GAREN SEMI crystal growth.

Company Profile

      Hangzhou GAREN SEMI Co., Ltd. was established in September 2022, is a technology enterprise focusing on the research and development, production and sales of Gallium Oxide and other semiconductor materials. The company has created a new technology for Gallium Oxide single crystal growth, and has more than ten international and domestic invention patents, breaking through the monopoly and blockade of Western countries such as the United States and Japan on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

For more information about GAREN SEMI and its products

Please visit our official website: http://garen.cc/

Or contact us:

Mr. Jiang :15918719807

Email: jiangjiwei@garen.cc

Mr. Xia :19011278792

Email:xianing@garen.cc