【Member News】The Association Standards Project Review Meeting of "Gallium Oxide Single Crystal Dislocation Density Test Method" and "β Phase Gallium Oxide Homogeneous Epitaxial Wafer" was Successfully Held

      On January 16, 2025, the Semiconductor Materials Branch of China Electronic Materials Industry Association held a group standard project review meeting on "Gallium Oxide Single Crystal Dislocation Density Test Method" and "β Phase Gallium Oxide Homogeneous Epitaxial Wafer " in Hangzhou.

      This meeting is in accordance with the requirements of the relevant state departments for association standards and the provisions of the China Electronic Materials Industry Association "CEMIA Association Standards Management Measures" (Trial), according to the guild received the relevant enterprise association standards proposal decided to be held. The lead unit of the association standard for the application project is Hangzhou GAREN SEMI Co., LTD., and the main participating units are Sun Yat-sen University, University of Science and Technology of China, Yongjiang Laboratory, Xidian University, ZJU-Hangzhou Global Scientific and Technological Innovation Center and so on. The review experts mainly include Ma Chunxi, standardization expert of China Electronic Materials Industry Association, Ye Jiandong, professor of Nanjing University, Wang Yuangang, researcher of the 13th Research Institute of China Electronics Technology Group Corporation, Zhang Song, researcher of the 46th Research Institute of China Electronics Technology Group Corporation, and so on. EDRI, SIAMC, ULCAN, XingHui New Materials and Jingchi Electromechanical representatives attended the meeting.

      The project approval meeting was chaired by Lin Jian, Secretary General of Semiconductor Branch of China Electronic Materials Industry Association. Lin Jian first introduced the members of the review panel at the meeting, and Ma Chunxi was elected by the participants as the review team leader.

      At the meeting, the review panel heard a detailed report on the importance, necessity, main content, and current situation of domestic and international development of the standard from representatives of Hangzhou Garen SEMI Co., LTD., the association standards reporting unit of Gallium Oxide Single Crystal Dislocation Density Test Method, β Phase Gallium Oxide Homogeneous Epitaxial Wafer, and the relevant issues were questioned and fully discussed. It is considered that the test methods and products involved in the proposed project standard belong to the field of ultra-wide band gap semiconductor materials and are restricted by the Wassenaar Arrangement. The formulation of these two standards conforms to the development of strategic emerging industries and the urgent needs of the industry. The test methods and product technical contents involved in the standards are basically complete, and it is agreed to establish the project, and put forward a series of constructive suggestions for the follow-up work.

      As a result, the delegates organized a team to visit the ZJU-Hangzhou Global Scientific and Technological Innovation Center and the National Key Laboratory of Silicon and Advanced Semiconductor Materials. It promotes the integration of industry, education and research of semiconductor material industry in China.