
【Member News】New Energy Vehicle Charging in the Future Only 7 Minutes? Qi Hongji, Chairman of Fujia Gallium, Takes You to Explore the Secrets of Gallium Oxide!
日期:2025-01-22阅读:316
Can you imagine? Charging new energy vehicles in the future is expected to be as fast as refueling!
"The charging time of new energy vehicles in the future is expected to be greatly shortened, for example, it takes 30 minutes to charge fast, and it may only take 7 minutes in the future, which is as fast as refueling." Recently, when Fujia Gallium research, the company's chairman Qi Hongji told the China Securities Journal reporter that all the mystery is a palm-sized crystal in his hand - Gallium Oxide material.
Qi Hongji introduces Gallium Oxide materials to reporters. Photo by Ren Mingjie
Gallium Oxide has a wide range of applications, such as power electronics. Qi Hongji said that the power electronic devices prepared by Gallium Oxide are used in data centers, which can help data centers be more energy efficient, and are used in high-voltage and high-current scenarios such as rail transit, photovoltaic inverters, high-power communications and other fields, which can further improve the stability and efficiency of the system.
Especially for new energy vehicles, the high voltage trend is obvious, the high voltage electrical system voltage has been gradually increased from 400 V to 800 V, this improvement can improve the battery charging speed, reduce the battery heat, while improving the motor efficiency, reduce manufacturing costs. In the future, the voltage platform architecture of 1200 V or even higher will be adopted. This means that the use of Gallium Oxide prepared power devices will be promising in the future, "Gallium Oxide is expected to shorten the charging time of new energy vehicles to 1/4 of the present." Qi Hongji said.
At present, the third-generation semiconductor material Silicon Carbide still occupies the dominant position. Sanan Optoelectronics recently said in response to investor questions, Silicon Carbide because of its chemical stability, high thermal conductivity, low thermal expansion coefficient and other excellent performance, in new energy and other high-power fields have a wide range of applications. According to Yole data, 2023 to 2029, the global Silicon Carbide device market size will grow at a compound growth rate of about 24%, to 2029 the global market size will be close to 10 billion US dollars.
As the fourth generation semiconductor material, Gallium Oxide material has also entered the threshold of industrialization at present, and the future is unlimited.