【Conference News】Get a Sneak Peek at Reports Related to Gallium Oxide Materials! 2025 Power Semiconductor Manufacturing and Supply Chain Summit Forum

      From February 26 to 28, 2025, "2025 Power Semiconductor Manufacturing and Supply Chain Summit Forum" will be held in Chongqing Shancheng International Convention Center. The forum was co-sponsored by China Advanced Semiconductor Industry Innovation Alliance (CASA) and Sanan Optoelectronics Co., Ltd. and hosted by Jizhi Semiconductor Industry Network (www.casmita.com), 3rd Generation Semiconductor Industry, Chongqing San'an Semiconductor Co., Ltd, and Beijing Mackenbridge New Material Productivity Promotion Center Co., LTD. Co-organized by Chongqing University, Chongqing University of Posts and Telecommunications, Hunan San'an Semiconductor Co., LTD.

      Shi Dongmei, former chief Technical engineer of High Technology Research and Development Center of National Natural Science Foundation of China, was invited to attend the forum and bring a report which is “Development Trend of Gallium Oxide and Diamond Ultra-Wide Band Gap Semiconductor Technology”. The report will focus on the development strategy, scientific and technological plans and project deployment of Gallium Oxide and Diamond ultra-wide band gap semiconductors in developed countries such as Japan, the United States and the United Kingdom in recent years, and sort out and analyze the progress and development trend of these countries in Gallium Oxide and Diamond wide band gap semiconductors.

      Guest Introduction: Shi Dongmei, second-level research fellow, Doctor of Engineering, postdoctoral co-supervisor. She has won 1 third prize of National Science and Technology Progress, 1 second prize of National Defense Science and Technology Progress, 6 second prize of Ministerial Science and Technology Progress and 1 third prize. She used to be the director of the Materials Department of the High-tech Research and Development Center of the Ministry of Science and Technology, and has long been engaged in the management of National High-tech R&D Program (863 Program) in the field of new materials and the National Key Research and Development Program of China. For a long time, she has carried out scientific and technological policy research on the development strategy of new materials, new energy and other high-tech fields, and the management mechanism of scientific and technological plans. Presided over and participated in the completion of a number of national soft science research programs such as "Tracking Research on the Development Trend of World High Technology", "Scientific and Technological Support of Industrial Chain and Supply Chain in Key High-Tech Fields", the strategic research projects of the Ministry of Science and Technology Innovation Strategic research projects, and the projects of high-end think tanks of the Ministry of Science and Technology, and wrote a number of strategic research reports and papers. Currently, she is deputy editor of China Basic Science and deputy director of the editorial Board of Frontier Science.

      Hangzhou GAREN SEMI Co., Ltd. will bring a number of products to the forum. On this occasion, we sincerely invite colleagues in the advanced semiconductor industry to visit booth A06 for exchange and cooperation. Zhang Hui, professor of Zhejiang University and chairman of Hangzhou GAREN SEMI Co., LTD., will attend the forum and bring a keynote report on "Progress of Large-Size and High-Quality Gallium Oxide Single-Crystal Materials".

      Guest Introduction: Professor Zhang Hui is the chairman of Hangzhou GAREN SEMI Co., LTD., a dual professor and doctoral supervisor of the National Key Laboratory of Silicon and Advanced Semiconductor Materials of Zhejiang University and the Advanced Semiconductor Research Institute of ZJU-Hangzhou Global Scientific and Technological Innovation Center. To meet the urgent demand of power device materials, the melt growth, defect control, crystal processing and doping of Gallium Oxide single crystal materials have been studied. He has published a series of papers in internationally renowned journals such as Chem. Soc. Rev., J. Am. Chem. Soc., Nano Lett., Adv. Mater., Angew. Chem. Int.Ed. etc. In 2007, he was nominated for one hundred outstanding doctoral dissertations in China, in 2008, he won the first prize of Science and Technology of Zhejiang Province (ranked third), and in 2013, he won the second prize of National Natural Science (ranked second). In 2014, he was selected into the "Young Top Talents" project of the National 10,000 People Plan. In 2015, he was awarded the Outstanding Youth Fund of the National Natural Science Foundation.

      Zhang Hezhi, associate professor of Dalian University of Technology, will be invited to attend the forum and bring the theme report "Formation Mechanism of Extended Defect in Gallium Oxide Epitaxy Growth and Its Impact on Power Devices", to share relevant research results and progress, involving the research on defect expansion in β-Ga₂O₃ thick film epitaxy and other content reports will share the latest progress.

      Guest Profile: Zhang Hezhi received his Ph. D. degree from Universite Paris XI, France, under the supervision of researcher Maria Tchernycheva. In August 2016, he joined the Ecole Polytechnique Fédérale de Lausanne (EPFL) as a postdoctoral researcher in the research group of Professor Nicolas Grandjean, a research expert in the field of wide band gap semiconductors. He is currently an associate professor at the college of Integrated Circuits, Dalian University of Technology, mainly engaged in the research of the third generation wide band gap semiconductor devices. His work achievements have been published many times in high level journals such as ACS applied material andinterface, Applied physics letter, Nanotechnology and so on.

      Professor Li Wanjun from Chongqing Normal University will attend the forum and bring a keynote report "Ultra-Wide Band Gap Gallium Oxide Based Gallium Oxide Deep Ultraviolet Photodetector", which will focus on the research progress of Gallium Oxide based Gallium Oxide deep ultraviolet photodetector, focusing on the latest research results of the research group.

      Guest Profile: Li Wanjun, Ph.D., Professor and master tutor of Chongqing Normal University, young Scholar of Chongqing Bayu, candidate of Chongqing Academic Technology leader, leading talent of Chongqing Normal University, young top talent, teacher ethics model, Council Member of Chongqing Physical Society, Council Member of Chongqing Optical Society, Standing member of wide band gap Semiconductor Materials and Devices Special Committee of Chongqing Electronics Association, He is the reviewer of more than 40 domestic and international academic journals such as Advanced Materials, and the young editorial board member of Semiconductor Optoelectronics and Journal of Chongqing University. He is mainly engaged in the research of wide band gap semiconductor materials and devices, and has presided over 6 national and provincial scientific research projects. He has more than 90 relevant academic papers been published in domestic and international journals such as Advanced Science, Small, Advanced Optical Materials, Applied Physics Letters, Optics Express, Chemical Engineering Journal、ACS Applied Materials & Interfaces、Small Methods. Among which 2 papers have been listed as 1‰ of ESI hot spots and 1 authorized invention patent. His research achievements won the second prize of Chongqing Natural Science Award.

      Xu Xiaorui, associate professor of Fuzhou University, will be invited to attend the forum and bring the theme report "Design and Key Process Research of High-Voltage Low-Conduction Gallium Oxide Power Diode Device", and will share relevant research progress and achievements around key issues. For more details of the report, please pay attention!

      Guest Introduction: Dr. Xu Xiaorui, now a full-time teacher of Microelectronics Department of College of Physics and Information Engineering, Fuzhou University, is a high-level talent and master tutor of Fujian Province. Dr. Xu Xiaorui has been engaged in the research of key materials, devices and applications in the field of power semiconductors, focusing on the core scientific issues of "high withstand voltage, low power consumption and high reliability". His main research interests include ultra-wide band gap Ga₂O₃ material thick film epitaxy, Si and GaO based power semiconductor device design and process development. At present, he has published 15 high-level papers in T-IE, T-PEL, EDL, APL, ISPSD and other internationally renowned journals/conferences as the first (corresponding) author.