【Device Papers】Modeling of β-Ga₂O₃ based Double Gate Drain Extended Junction Less FET and its parameterextraction methodology

      Researchers from the National Institute of Technology Karnataka have published a dissertation titled "Modeling of β-Ga₂O₃ based Double Gate Drain Extended Junction Less FET and its parameterextraction methodology" in Modelling and Simulation in Materials Science and Engineering.

Abstract

      A static current model of a β - Gallium Oxide (β-Ga₂O₃) based double gate drain extended junction less field effect transistors (DG-DeJLFET) is proposed.The model consists of two voltage controlled current sources connected in series.One of the current sources accounts for the operation of the junction less field effect transistor whereas other takes care of the drift region current. The model is formulated by considering the mobility degradation due to higher electric fields. A parameter extraction methodology for the model is also proposed based on the fact that some parameters will be dominant in specific regions of operation. In general, the extraction technique is based on the difference in device behaviour at higher and lower electric fields. The proposed parameter extraction methodology is validated by comparing the results with data obtained from TCAD simulation.

DOI：

https://doi.org/10.1088/1361-651X/ada819