【Member News】CASICON Chongqing Station | Zhang Hui, Chairman of GAREN SEMI: Progress in Large and High Quality Gallium Oxide Single Crystal Materials

      Among many wide band gap semiconductors, Gallium Oxide is the only wide band gap semiconductor that can be made into large-size crystals by atmospheric pressure and traditional melt method. It has the advantages of fast growth rate (1-2 orders of magnitude), low cost of large-scale production, and high quality large-size crystals. Compared with SiC and GaN, Gallium Oxide has larger Bandgap, breakdown field strength, and BFOM. The fabricated power devices have higher operating voltage, power, and smaller on-resistance and power consumption. The hardness of Gallium Oxide (6) is close to that of silicon, and silicon mature processing equipment and technology (Chemical Mechanical Polishing, CMP) can be used, with high processing efficiency and yield, which can significantly reduce costs. Gallium Oxide has become the " bottleneck" material in the field of power devices.

      Recently, the "2025 Power Semiconductor Manufacturing and Supply Chain Summit Forum" co-sponsored by China Advanced Semiconductor Industry Innovation Alliance (CASA) and Sanan Optoelectronics Co, Ltd. was held in Chongqing Shancheng International Convention Center. The forum focused on many key issues in power semiconductor manufacturing and supply chain, multi-advantageous forces combined, academicians led, experts gathered to work together to promote the coordinated development of the whole power semiconductor industry chain.

Zhang Hui

Professor of Zhejiang University, Chairman of Hangzhou GAREN SEMI Co., LTD

      During the "Sub-Forum 2: Gallium Nitride and Other Power Semiconductor Technology and Applications", Zhang Hui, professor of Zhejiang University and chairman of Hangzhou GAREN SEMI Co., LTD., brought a theme report of "Progress of Large-Size and High-Quality Gallium Oxide Single Crystal Materials", sharing the latest progress of Gallium Oxide single crystal crystal growth technology, Czochralsk, casting and VB single crystal growth research and development. The report pointed out that there are many kinds of Gallium Oxide crystal growth methods, casting and VB methods in size, cost, quality and many other aspects, have shown great potential for large-scale industrialization.

      The casting method and other technologies researched and developed by his team have successfully achieved the growth of multiple crystal directions, different doping, large size (6 inches) Gallium Oxide crystals, which can meet various epitaxial and device needs. According to estimates, the existing technology can make the 6-inch substrate cost less than 2000 yuan after mass production, and further reduce the cost will be completed in 2 to 3 years, providing the industry with high quality and cheap substrate. High quality, low cost substrates can assist colleagues to overcome some key problems, such as defect behavior, P-type doping, large area high current devices. The industrialization process of Gallium Oxide will gradually accelerate, and the combination of substrate, epitaxy, device and application should be more closely to achieve beyond.

About GAREN SEMI

      Hangzhou GAREN SEMI Co., Ltd. was established in September 2022, is a technology enterprise focusing on the research and development, production and sales of Gallium Oxide and other semiconductor materials. Relying on the National Key Laboratory of Silicon and Advanced Semiconductor Materials of Zhejiang University and ZJU-Hangzhou Global Scientific and Technological Innovation Center, the company has formed a R & D and production team with academician of Chinese Academy of Sciences, as the chief consultant. The company has created a new technology for Gallium Oxide single crystal growth, and has 14 international and domestic invention patents, breaking through the monopoly and blockade of Western countries such as the United States and Japan on Gallium Oxide substrate materials. Based on solving the major national needs, GAREN SEMI will be deeply engaged in the continuous innovation of the Gallium Oxide upstream industry chain, and strive to provide product guarantee for the development of China's power electronics and other industries.

      GAREN SEMI leads the industry innovation, adopts the self-developed casting method Gallium Oxide single crystal growth technology, realizes the production technology breakthrough of 6-inch single crystal substrate and wafer-level (010) single crystal substrate, and develops the first Gallium Oxide special VB crystal growth equipment including process package. The company has mastered the core technology of Gallium Oxide growth, processing, epitaxy and other whole chain, providing customers with large-scale high-quality Gallium Oxide products and equipment with complete independent intellectual property rights.

Introduction of Products

Gallium Oxide Special VB Crystal Growing Equipment

      GAREN SEMI's dedicated Gallium Oxide crystal growth equipment meets the high temperature and high oxygen environment required for Gallium Oxide growth. The equipment is made of non-iridium crucible material and can operate in air atmosphere. The R&D team independently designed a unique composite temperature measurement technology and temperature control algorithm to ensure the stability, uniformity and consistency of the crystal growth process. The equipment realizes a fully automated crystal growth process, reduces manual intervention, and significantly improves production efficiency and crystal quality. The Gallium Oxide crystals produced by the equipment have cylindrical shapes, and by controlling the process, various large-sized single crystals with different crystal faces can be obtained. The equipment also supports the upgrade to larger single crystals to meet the growing needs of epitaxy technology and device applications.

VB Method Conductive Type 4-Inchs Gallium Oxide Single Crystal 

      Hangzhou GAREN SEMI Co., LTD. optimized the process based on the self-developed Gallium Oxide special crystal growth equipment, adopted the Vertical Bridgman (VB) method to successfully achieve 4 inches of Gallium Oxide single crystal conductive doping. And the crystal growth results can be stably repeated. This fully shows that GAREN SEMI's self-developed Gallium Oxide special crystal growth equipment and its supporting crystal growth process have the advantages of high adaptability, high stability and high fault tolerance in the Gallium Oxide single crystal growth by VB method. Providing more product choices for downstream customers, and to help the development of the industry. The VB method Gallium Oxide crystal growth equipment and process package have been fully open for sale.   

6 inch UID Gallium Oxide Substrate

      Hangzhou GAREN SEMI Co., Ltd. successfully prepared high quality 6-inch unintentionally doped and conductive Gallium Oxide (β-Ga₂O₃) by using the self-created casting method, and processed 6-inch Gallium Oxide substrate, becoming the first domestic industrialization company to master the preparation technology of 6-inch Gallium Oxide single crystal substrate.