【Member News】Breakthrough in Fujia Gallium's Gallium Oxide MOCVD Homoepitaxy, Support Vertical Power Device Industries to Land

      Recently, Hangzhou Fujia Gallium Technology Co., LTD. (hereinafter referred to as: Fujia Gallium) has made an important technological breakthrough in the research and development of Gallium Oxide MOCVD homogeneous epitaxial film. In Fujia Gallium's Gallium Oxide single crystal substrate, the homogeneous epitaxial film with a thickness of more than 10 microns has been grew. The technology has reached the international leading level. And the relevant standardized products will be listed in April 2025. It provides key material support for high-end equipment such as high-voltage platform of new energy vehicles and flexible transmission device of smart grid.

      The test results of the third party testing institution, the National Institute of Metrology，China, show that the background carrier concentration of MOCVD epitaxial film is controlled as low as 3.6E15 cm^-3, and the mobility reaches 172.7 cm²/V·s. The successful development of high-quality Gallium Oxide homogeneous epitaxial film based on MOCVD technology will support 3300V vertical high-voltage power electronic device industry quickly land in the future.

      MOCVD epitaxy technology has the advantages of high growth crystal quality, good homogeneity thickness, fast deposition rate and precise doping control, etc., and has been applied in large-scale production in the second and third generation semiconductor industries such as Gallium Arsenide and Gallium Nitride. For a long time, MOCVD epitaxial growth of Gallium Oxide films still have high background carrier concentration, high defect density etc. problems.

      By using MOCVD technology and self-produced Gallium Oxide substrate products, Fujia Gallium has greatly improved the crystal quality and thickness of the epitaxial film through substrate surface optimization, multi-step epitaxial growth and other process strategies, and achieved a low background carrier concentration and high mobility of Gallium Oxide homogeneous epitaxial film, with comprehensive performance indicators reaching the international advanced level. The successful development of MOCVD homogeneous epitaxy films with a thickness of more than 10 microns indicates that MOCVD epitaxy technology has the ability to mass produce large thickness and high quality Gallium Oxide homogeneous epitaxial wafer, which can provide material support for the development of vertical Gallium Oxide power devices.

About Fujia Gallium:

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. Mainly engaged in the growth of Gallium Oxide single crystal materials, Gallium Oxide substrate and epitaxial wafer research and development, production and sales, the products are mainly used in power devices, microwave radio frequency and photoelectric detection fields.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium Industry", and 3 software copyrights (crystal growth control software).

For more information about Hangzhou Fujia and its products

Please visit our official website: www.fujia-hiom.com

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