【Device Papers】Impact of Oxygen Vacancies on Photodetection Performance of Ga₂O₃: A Comprehensive Review

      Researchers from the Galgotias University have published a dissertation titled "Impact of Oxygen Vacancies on Photodetection Performance of Ga₂O₃: A Comprehensive Review" in Journal of Electronic Materials.

Abstract

      In response to increasing demands for security and safety in the defense sector, various scientific advancements such as fiber optic communication systems, process control, environmental sensing, and advanced wearable photodetectors are expected to evolve significantly. Gallium oxide, with wide-bandgap energy of 4.9 eV, stands out as a crucial material for the next generation of deep-ultraviolet light (DUV) photodetectors. Ga₂O₃ films, known for their intrinsic oxygen vacancies (V_O), exhibit high responsivity and fast response times when used as photodetectors. Modifying defects, annealing temperature, and doping are critical steps in enhancing the switching speed and carrier transition rates in photosensors. Post-annealing treatments such as N-doping, recrystallization, and adjustment of V_O concentrations have been shown to significantly improve photosensitivity. In this paper, the roles of parameters such as annealing temperature, deposition pressure, and defect engineering in enhancing the performance of Ga₂O₃-based photodetectors are discussed in detail.

DOI：

https://doi.org/10.1007/s11664-025-11746-5