【World Express】MOCVD System Promoting Ga₂O₃ Semiconductor Research

  The engineers and material scientists of Cornell University have added one of the most advanced equipment to their laboratory equipment suite, which helps the University become the leader in the research of gallium oxide around the world. This material is usually regarded as the successor of silicon carbide and gallium nitride, and is the preferred semiconductor for many electrical and electronic applications.

  A set of metal organic chemical vapor deposition (MOCVD) system was put into operation on June 30 in Duffield Hall Laboratory of Hari Nair, Assistant Research Professor of Materials Science and Engineering. The system has been deliberately calibrated for the fabrication of gallium oxide thin films, which are highly valued for their ability to resist high voltage, as well as for its high power density and high frequency. These properties make it an ideal material for applications such as electric vehicles, renewable energy and 5G communications.....