【Member News】Fujia Gallium Made Appearance at the 4th Generation Semiconductor Technology Conference, Sincerely Inviting Gallium Oxide Ecosystem Partners to Jointly Explore New Blue Oceans in the Industry

      From May 15th to 16th, the Fourth-Generation Semiconductor Technology Conference was grandly held in Hangzhou. As a leading enterprise in China's Gallium Oxide materials industry, Fujia Gallium Industry showcased its independently developed 6-inch Gallium Oxide single crystal substrates, epitaxial films, and "one-click crystal growth" equipment and other cutting-edge products, comprehensively demonstrating its technological breakthroughs and industrialization achievements in the ultra-wide band gap semiconductor field.

      It is worth noting that recently, the "Ultra-Wide Band Gap Semiconductor Innovation and Development Alliance", jointly initiated by 20 institutions including Fuga Gallium Industry, was showcased at the 2025 Shanghai Wide Band Gap and Ultra-Wide Band Gap Semiconductor Industry Innovation and Development Forum. Qi Hongji, co-director of the Shanghai Key Laboratory of Wide Band Gap and Ultra-Wide Band Gap Semiconductor Materials and chairman of Fujia Gallium, attended the alliance launch ceremony as an industry expert and representative of the initiating unit. The relevant reports have been read more than 850,000 times on the Xinhua News Agency client, and the industry's attention continues to rise.

      As one of the first initiating units of the Ultra-Wide Band Gap Semiconductor Innovation and Development Alliance, Fujia Gallium looks forward to more enterprises and investment institutions from the upstream and downstream of the industrial chain actively joining the alliance, promoting in-depth exchanges within the industry, facilitating industry, education and research cooperation and the coordinated development of the Gallium Oxide industrial chain, and boosting the future of the industrial ecosystem.

About Hangzhou Fujia Gallium

      Hangzhou Fujia Gallium Technology Co., LTD., founded on December 31, 2019, is the first "hard technology" enterprise registered by Hangzhou Institute of Optics and Fine Mechanics. With the vision of "Making the World Use Good Materials", the company focuses on the industrialization work of wide bandgap semiconductor Gallium Oxide materials. The core products include Gallium Oxide single crystal substrates, MOCVD epitaxial wafers, MBE epitaxial wafers, Gallium Oxide crystal growth and processing equipment. The products mainly serve the fields of power devices, microwave and radio frequency, and optoelectronic detection.

      At present, the company has won a number of honors: In 2022, it won the Zhejiang Province Science and Technology Small and Medium-Sized Enterprise; National High-Tech Enterprise in 2023; In 2024, it will be awarded as Hangzhou Enterprise High-Tech Research and Development Center and Zhejiang Special Small and Medium-Sized Enterprise. Obtain ISO9001 quality system certification in 2025 (No. 20225Q20294R0M); It undertook one Gallium Oxide project for the National Development and Reform Commission and participated in three national and provincial projects from the Ministry of Science and Technology, Zhejiang Province, and Shanghai. In addition, it has obtained 12 international patents authorized (6 in the United States and 6 in Japan), 40 domestic patents authorized, 3 trademark certification and registration of "Fujia Gallium", and 4 software copyrights (crystal growth control software of "one-click crystal growth").