【Member News】Strong Collaboration! GAREN SEMI Partners with NextGO. Epi from Germany to Promote the Application of Gallium Oxide

      GAREN SEMI, a leading enterprise in China's Gallium Oxide substrate field, has signed a global strategic cooperation agreement with NextGO.Epi, a leading German Gallium Oxide epitaxial company. The two sides will leverage their technological advantages to collaborate on key research and development, focusing on the research and industrialization of ultra-wide band gap semiconductor material Gallium Oxide. This powerful collaboration will jointly promote breakthroughs in the application of Gallium Oxide in new energy, power electronics and other fields, injecting new impetus into the global semiconductor industry.

      Berlin, Germany, NextGO Epi was officially established as a large-scale manufacturing company specializing in high-quality β-Ga₂O₃ (Gallium Oxide) epitaxial wafer, aiming to provide critical materials for high-power and photoelectric detection applications. NextGO Epi is an incubated enterprise of the Leibniz-Institut für Kristallzüchtung (IKZ) in Germany (Figure 1), co-founded in 2025 by Dr. Ta-shun Chou, Dr. Andreas Popp and Dr. Andreas Fiedler.

(Figure 1) NextGO Epi is based at the Leibniz-Institut für Kristallzüchtung Leibniz Crystal Institute in Berlin, Germany.

About NextGO Epi

      NextGO Epi is a technology company specializing in the manufacturing of Gallium Oxide epitaxial wafer. It is committed to providing high-quality and highly reliable epitaxial materials for global customers to support the research and development and production of next-generation high-power semiconductor devices. The company's headquarters is located in Berlin, Germany. Relying on the technological accumulation of the Leibniz-Institut für Kristallzüchtung, it is committed to becoming a global leader in the field of Gallium Oxide epitaxial wafer.

About GAREN SEMI

      Hangzhou GAREN SEMI Co., Ltd. is a technology-based enterprise specializing in the research and development, production and sales of wide band gap semiconductor materials such as Gallium Oxide. GAREN SEMI leads industry innovation by adopting its independently developed new casting method for single crystal growth technology. It was the world's first to launch an 8-inch Gallium Oxide single crystal substrate, setting an industry record of upgrading one size each year from 2 inches to 8 inches. We have developed the first domestic VB crystal growth equipment dedicated to Gallium Oxide that includes a process package and are now fully available for sale. GAREN SEMI is committed to addressing major national demands. It has mastered core technologies covering the entire chain of Gallium Oxide growth, processing, and epitaxy, and has obtained 14 domestic and international invention patents. It is deeply engaged in continuous innovation in the upstream industrial chain of Gallium Oxide, striving to provide product guarantees for the development of China's power electronics and other industries.